VDS10V Search Results

YTFP450

Abstract: SC651
Contextual Info: FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE tt-MOSH HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR U nit in mm ORIVE APPLICATIONS, 159M A X . FEATURES: 0Z2±aZ A m • Low Drain-Source ON Resistance :

YTFP250

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE it - YTFP250 MOSI INDUSTRIAL APPLICATIONS Unit ln nun HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 1&9MAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR ^12±Û 8 DRIVE APPLICATIONS. A FEATURES:

YTFP451

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ir - YTFP451 MOSI INDUSTRIAL APPLICATIONS Unit in am HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&9MAX. 0aa±Q8 DRIVE APPLICATIONS. dl FEATURES:

2SK1377

Abstract: 10R1B
Contextual Info: 2SK1377 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E tt-MOS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 1Û3MAX. 0 1 2 ± d 2 /- FEATURES:

MP6702

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MP6702 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm • The Drain is Isolated from Case. • 6 MOS FETs are Built-in to 1 Package. • With Built-in Free Wheeling Diode. • Low Drain-Source ON Resistance

Contextual Info: FLM7785-4C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

Contextual Info: FLM10I1-8C F| .g p -,. Internally Matched Power GaAs FETs r UJ11 j U FEATURES • High Output Power: P ^ b = 38.5dBm Typ. • High Gain: G ^ b = 5.0dB (Typ.) • High PAE: r iadd = 22% (Typ.) • Broad Band: 10.7 ~ 11.7GHz • Impedance Matched Zin/Zout = 50Q

2sk184

Contextual Info: TO S H IBA 2SK184 TO S H IB A FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2 S K 1 84 Unit in mm LO W NOISE A U D IO AMPLIFIER APPLICATIONS 4.2MAX. • • • High |Yfs| : |Yfc| = 15mS Typ. (VDS = 10V, VGS = 0) High Breakdown Voltage : VGDg= —50V

Contextual Info: TOSHIBA DISCRETE/OPTO 45E D ^□^7250 0017^7^ TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - fl • TOSM - YTFP251 MOSI) INDUSTRIAL APPLICATIONS Unit in HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. l&SMAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR

iha 25

Abstract: U36-3
Contextual Info: O S fé F E T rë • 3 S K 1 il » 2 7 ffliÊ : UHF TV a MS. Tz—tMffîÎÊHm, i mmo m ~X g fë S m S+ M V d s V V g s (V)* M i É : VHF TV lYfsl(niS) 17.00 2.00 30 Ciss(pF) 150 Crss(pF) Tch("C) 125 PG(dB) # â : mnmmo « é ® „ fi Vos(V)* m s .m

3SK181

Abstract: C213G Ig21 J-044
Contextual Info: 3SK181 N 'C h a n n e l E n h a n c e m e n t M O S S ili c o n F E T D u a l G ate 3044 High-Frequency General-Purpose Am p Applications 'Z 2 1 X A A p p lic atio n s . FM tunorc and VHF tuners Features . Enhancement type . Easy AGC (Cut o f f a t V G 2 S = o v >

5HN01N

Contextual Info: Ordering number : ENN6638 j N-Channel Silicon MOSFET 5HN01N IS A fÊ Y O i Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. unit : mm 2178 Specifications Absolute Maximum Ratings

RL56

Abstract: CA6V
Contextual Info: Primary Regulators PQ1PF1 PQ1PF1 Primary Regulator for Switching Power Supply 50W Class • Features ■ Outline Dimensions (Unit : mm) • 5-terminal lead forming package (equivalent to TO-220) • Built-in oscillation circuit (oscillation frequency : TYP. 100kHz)

for1a

Abstract: 2sk82 me75es JEC ELECTRONICS bms75g5 U511-1
Contextual Info: Tfl D Ë J ti4E7S5S □ D i a n a 6427525 N E C 3 ELECTRONICS ’v. ' 98D INC - •*' 18993 * ' ••*“- .1 MOS D *./*.•Vf'-^ -•* ' F I E L D~ E F F E C T 'T R A X S I S T C F, ELECTH0N DEVICE 2SK82 F A S T S W I T C H I N G N - C H A N N E L ' S I L I CON

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

fujitsu gaas fet

Abstract: FLK027WG FLK027
Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: riadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general

2SK422

Abstract: 2SK42-2 LD06A
Contextual Info: FIELD EFFECT TRANSISTOR 2SK422 SILICON N CHANNEL MOS TYPE ^-M OS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. DC-DC CONVERTER AND INTERFACE APPLICATIONS. &1MAX. FEATURES : . Excellent Switching Times . High Forward Transfer Admittance Low Leakage Current

ytfp250

Contextual Info: FIELD EFFECT TRANSISTOR YTFP250 SILICON N CHANNEL MOS TY P E jr-MOSii HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR _ U n it DRIVE APPLICATIONS. 1&9M AX. in mm 0 3 .2 * 1 1 2

2SJ72

Abstract: 2SK147 Toshiba 2SK147 2SK147 toshiba 2sk147 BL Toshiba 2SJ72 Low noise audio amplifier
Contextual Info: SILICON N CHANNEL JUNCTION TYPE 2SK147 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS. S.1MAX. FEATURES: • High Iyfs | : Vfs|=40mS(Typ. (VDS-10V, V g s ^O, lDSS“5mA) 0.7SUAX * :High Breakdown Voltage : V g d S“-40V 1.ÜMAX. * 'Low Noise : NF=1.0dE (Typ.)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power - PidB = dBm at 5.9 GHz to 6.4 GHz

Contextual Info: ,TOSHIBA {DISCRETE/OPTO}9097250 TOSHIBA DISCRETE/OPTO TO SH IBA SEMICONDUCTOR TO DE I TDTTSSD GDlt.411 □ Ï 90D 16411 DT-3^S?7 TOSHIBA GTR MODULE MG 3 O G 2 DM 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

Contextual Info: TT TOSHIBA í D I S C R E T E / O P T O J 9097250 ¿/oSììba T O S H IB A DGl hTD S 7 dFI^G TVESG 99D D I S C R E T E /O P T O 16902 TOSHIBA FIELD EFFECT TR A N S I S T O R SEMICONDUCTOR YTF841 SILICON N C H A N N E L MOS TYPE TECHNICAL DATA ( 7T-M0S I )

Contextual Info: TOSHIBA DISCRETE/OPTO 4SE » • TGITBSD D D 1 7 ti ñ G T «TOSM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - YTFP253 MOSI) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HICH CURRENT SWITCHING APPLICATIONS. aieuAi. CHOPPER REGULATOR. DC-DC CONVERTER AND MOTOR

Contextual Info: TOSHIBA DISCRETE/OPTO 4SE D TOSHIBA FIELD EFFEC T TRANSISTOR SILICON N C H A N N EL MOS T Y P E (tt - • CJ D C1 7 2 S G □□ITTÔÔ 4 «TO S M - YTFP453 MOSI) 'T 3A - ' l INDUSTRIAL APPLICATIONS Unit in Bin HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.