2SK82 Search Results

2sk82

Abstract: ifoc 2SK823 JI 32
Contextual Info: M O S Field E ffe ct P o w e r T ran sis to r 2SK823 N f t ^ N 7 -M O S I 2S K 823Ü , l f f l > h ^ > * T7 — MOS F E T ffii/CM S < , X - i -? -f > FET £|-5f£[21 W Ì : mm T ? f • f l T Ü >), ÏÜJSÎÈX ^ <y -f > r « - i i 4 . 7 MA X . 15 . 7 M A X .

2SK828

Abstract: RQ100 2sk82 transistor 3884
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK828 DESCRIPTION The 2SK828 is N-channel MOS Field Effect Power PACKAGE D IM EN SIO N S Transistor designed for switching power supplies DC-DC in m illim e te rs inches converters. FEATURES

2sk82

Abstract: LM 3883 2SK826
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK826 D E S C R IP T IO N The 2 S K 82 6 is N-channel MOS Field Effect Power P A C K A G E D IM E N S IO N S Transistor designed for switching power supplies, DC-DC in m illim eters inches

2SK822

Abstract: 2sk82
Contextual Info: M MOS o s M u n t t o ^ r ? - F ie ld E ffe ct P o w e r T ra n s is to r 2SK822 N ft^ ;U / '° 7 j i m 2S K8 2 2 i, FET m N f t i w i / X > A > X S > h M ''*'r7 — MOS F E T V * V ffiÎÆ ^ fS < , 7 f > / m # -M O S X ' i v f- > (^ - ii 0 , it lH iS x ^

lm575

Abstract: 2SK827 transistor DK RN lm5752 F1012
Contextual Info: N E C ELECTRONICS INC "t û 6427525 N E C ELECTRONICS DEI INC b45755S 98D MOS D O n O O l 19001 F I E L D D E F F E C T ELECTRON DP/ICS 7 | T '- " 17-13 T R A N S I S T O R 2SK827 . F A S T S W I T C H I N G N - C H A N N E L S I L I C O N POW ER MOS F E T

for1a

Abstract: 2sk82 me75es JEC ELECTRONICS bms75g5 U511-1
Contextual Info: Tfl D Ë J ti4E7S5S □ D i a n a 6427525 N E C 3 ELECTRONICS ’v. ' 98D INC - •*' 18993 * ' ••*“- .1 MOS D *./*.•Vf'-^ -•* ' F I E L D~ E F F E C T 'T R A X S I S T C F, ELECTH0N DEVICE 2SK82 F A S T S W I T C H I N G N - C H A N N E L ' S I L I CON

pu45

Abstract: 2SK821
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR EIECTRON DEVICE 2SK821 DESCRIPTION The 2SK821 is N-channel MOS Field E ffect Power Transistor PACKAGE DIMENSIONS designed fo r sw itching power supplies, DC-DC converters. FEATURES In m illim e te rs inches

transistor Bf 444

Abstract: transistor bf 324 TC-6305 3e tRANSISTOR 2SK824 T108
Contextual Info: M O S Field E ffe ct P o w e r T r a n s is to r N-7-+-^Mw<,7 — MOS F E T 7 A I i f f l 2SK824Ü, N f t :f / P - x > A > x ^ > l ' f / N , 7 - M O S FET W & m W i : mm - c & v , WHS D C -D C a •y j-y rm w , ft i t ° V DSS = 4 5 0 V , O'fS'+yffiiÆ

2SK821

Abstract: AJE TI TEA-509 F111 100-1000W EIR94
Contextual Info: r — z S 7 • 5 / — h M O S ï ï 2 ,B # & j m ' < r7 - M O S Field E ffe c t P o w e r T ra n s is to r 2SK821 MOS F E T — i i f f 2SK821 i, ffifitM S < , F X -Î7 f > l FETT"^> 7 'fë 14 * fi l n t iJ ' , B 0 i X - i v f > W fê 'A \ m . (-^ -Ü

for1a

Abstract: eic73 2SK821
Contextual Info: 64 27 525 N E C ELEC TRO NIC S INC 98D 18989 3 tiME7S2S □□IfiTflT 1 |"“ ••. . .,.r NEQm ' w ELECTRON DEVICE MO S y FIEL D P A C K A G E D IM E N S IO N S {Unit: mm _ _ _ _ _ _ " Jl T R A N S I S T G ?. 2SK821 / FAST S W IT C H IN G ft-CHANNEL

Contextual Info: 2SK829 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition)100u Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)

Contextual Info: 2SK825 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition)100u Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)

FS 0245

Abstract: 2SK828
Contextual Info: M N f - ^ U - z ^ - M O O S S F F ie ld E E f f e c t P o w e r T r a n s is t o r T i i f f l 2SK828 ü , N j -ï ’ ï X - t > tm v î& 7 f y / m < , x D c - D c j 4 u ", * - y h i f P ^ V - MOS FET y => y ^ i s ' , ftw m m t ’• m m ) 4 - ^ s i à T - t o

52AB

Abstract: 2SK825 FS5G 456-A5 RGI06
Contextual Info: M O S ï ï ^ # & J ^ < ,7 Y=7 - > > 7 . ? M O S Field E ffe c t P o w e r T ra n s is to r MOS FET x mm > h ff^ 'ot7 - M 0 S F E T T * > 2SK825 ¡±, N f-+ <, X -i -y -f-> D C -D C 3 11X ti * , i'f ïf é lll • mm) 7 f > 7'HiW-, 0 3 . 2 + 0.2 4.7 MAX. 15,7 MAX.

Contextual Info: 2SK822 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)22 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)90 Minimum Operating Temp (øC)

K825

Abstract: 2SK825
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK825 DESCRIPTION The 2SK825 is N-channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies, DC-DC converters. FEATURES in m illim e te rs inches «Suitable fo r switching power supplies, actuater controls,

2SK827

Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK827 DESCRIPTION The 2 S K 8 2 7 is N -channel MOS Field E ffe c t Pow er T ransisto r PACKAGE DIMENSIONS designed fo r s w itc h in g p o w e r supplies, D C -D C converter. in m illim eters inches

2SK824

Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK824 The 2SK824 is N-channel MOS Field Effect Power Transistor designed fo r switching power supplies, DC-DC PACKAGE DIMENSIONS in m illim eters inches converters. FEATURES •

2sk82

Abstract: 2SK823
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK823 The 2SK823 is N-channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed for switching power supplies, DC-DC converters. FEATURES in m illim e te rs inches • Suitable for switching power supplies, actuater controls,

2SK829

Abstract: 2sk82
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK829 DESCRIPTION The 2SK829 is N-channel MOS Field E ffect Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies, DC-DC converters. FEATURES in m illim e te rs inches

for1a

Abstract: 2sk82 2SK829 T12N
Contextual Info: N E C N E C ELECTRONICS 98D INC ELE CTR ONICS INC ~Tñ MOS 19005 D 7" — D Ë f| 1 ^ 5 7 5 2 5 FIELD GDnDDS EFFECT 4 TRAXS ISTC." ELECTRON DEVICE 2SK82S F A S T S W I T C H I N G N - C H A N N E L S I L I C O N ' POW ER MOS F E T PACKAGE DIMENSIONS Features

2SK822

Abstract: TD-4002 TD400
Contextual Info: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK822 DESCRIPTION The 2SK822 is N-channel MOS Field E ffect Power Transistor designed fo r sw itching power supplies, DC-DC PACKAGE D IM EN SIO N S in m illim e te rs (inches)

2SK824

Contextual Info: \-=7 > '> X 9 M O S Field Effect P o w e r T ra n sisto r _ 2SK824 FET iif f l 2 SK8 24 i , Nf-v*/U • *4 "/1- W nmm m t : mm > h # / N ° 7 - M 0 S FET ¡tS^ifcX'T am tt ^ ^ dss = ^50 V, ID(pc)= i 12 A RDS(on)i 0 . 5 Q ton —55 ns TYP. o £ £ D ! j { W

jb 5531

Abstract: 2SK826
Contextual Info: 5 ^ — 5 7 • 5 / — h M O S F ie ld E f f e c t P o w e r T r a n s is t o r 2SK826 N ^ ^ * ^ 7 - M O S F E T i i f f l 2SK826 i , N ^ - - v ^ ; W - ^ > ^ > X / y h ^ ' ° r7 - M 0 S T t > t & Î f c i ï * 1& < , •y f - > ? • * « , # D X C - i -y - f >