F1012 Search Results
F1012 Datasheets (12)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| F1012 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Original | 38.02KB | 2 | ||
| F10-1200 | Triad Magnetics | Transformers - Power Transformers - XFRMR LAMINATED THRU HOLE | Original | 69.01KB | |||
| F10-1200 | MagneTek | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - TANSFORMER, SPLIT PACK, SINGLE PRIMARY, 115V, 6 PINS, 12 VA | Scan | 56.88KB | 1 | ||
| F10-1200-C2 | Triad Magnetics | Transformers - Power Transformers - XFRMR LAMINATED 12VA THRU HOLE | Original | 151.86KB | |||
| F10-1200-C2-B | Triad Magnetics | Power Transformers, Transformers, XFRMR LAMINATED 12VA THRU HOLE | Original | 1 | |||
| F10123 | Fairchild Semiconductor | Triple Bus Driver | Scan | 43.9KB | 2 | ||
| F10123DC | Fairchild Semiconductor | Triple Bus Driver | Scan | 43.9KB | 2 | ||
| F10123DM | Fairchild Semiconductor | Triple Bus Driver | Scan | 43.9KB | 2 | ||
| F10124 | Fairchild Semiconductor | Quad TTL to ECL Translator | Scan | 52.07KB | 2 | ||
| F10124DC | Fairchild Semiconductor | Quad TTL to ECL Translator | Scan | 52.07KB | 2 | ||
| F10124DM | Fairchild Semiconductor | Quad TTL to ECL Translator | Scan | 52.07KB | 2 | ||
| F10125 | Fairchild Semiconductor | Quad ECL to TTL Translator | Scan | 46.47KB | 2 |
F1012 Price and Stock
Triad Magnetics F10-1200-C2-BPower Transformer 4200Vrms 12VA 6 Terminal Pin Thru-Hole |
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F10-1200-C2-B | 5 | 5 |
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F10-1200-C2-B | 5 | 18 Weeks | 5 |
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ebm-papst R2D250-AF10-12- Bulk (Alt: 01T1267) |
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R2D250-AF10-12 | Bulk | 1 |
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| R2D250-AF10-12 | Bulk | 15 Weeks | 1 |
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R2D250-AF10-12 | Bulk | 16 | 1 |
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R2D250-AF10-12 | Bulk | 9 | 12 Weeks | 1 |
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R2D250-AF10-12 | 1 |
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R2D250-AF10-12 | 3 |
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Glenair Inc 319JS067NF1012-6- Bulk (Alt: 319JS067NF1012-6) |
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319JS067NF1012-6 | Bulk | 3 Weeks | 1 |
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Glenair Inc 380FS115NF1012M3- Bulk (Alt: 380FS115NF1012M3) |
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380FS115NF1012M3 | Bulk | 3 Weeks | 1 |
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Glenair Inc 390DS002NF1012H6- Bulk (Alt: 390DS002NF1012H6) |
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390DS002NF1012H6 | Bulk | 3 Weeks | 1 |
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F1012 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Order this data sheet MOTOROLA by M R F10120H/D SEMICONDUCTOR TECHNICAL DATA F10120H* MHz Microwave Power Transistor 120 Watts NPN 960-1215 MHz .ill! CPT0 Designed for long pulsed common base amplifiers. Guaranteed Performance at 1215 MHz - Output Power = 120 Watts Peak |
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f10120h/dmrf10120hmrf10120hxmrf10120hxv+5 | |
ECL logic diagram
Abstract: F10123 F10523 fairchild ECL pin diagram of 2030 TA 2030
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f10123f10523f10123andecl logic diagram+3 | |
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Contextual Info: F10123 • F10523 TRIPLE BUS DRIVER F10K VOLTAGE COMPENSATED ECL DESCRIPTION — The F10123 and F10523 contain three NOR gates designed for bus driving applications. The outputs are designed and specified for driving 25 Q loads to -2.1 V. This allows an output to drive a 50 2 bus terminated at both ends. Higher |
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f10123f10523 | |
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Contextual Info: F10123 • F10523 TRIPLE BUS DRIVER F10K VOLTAGE COMPENSATED ECL DESCRIPTION — The F10123 and F10523 contain three NOR gates designed for bus driving applications. The outputs are designed and specified for driving 25 S loads to -2.1 V. This allows an output to drive a 50 S bus terminated at both ends. Higher |
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f10123f10523 | |
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Contextual Info: polyfet rf devices F1012 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended |
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f1012 | |
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Contextual Info: polyfet rf devices F1012 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
Original |
f1012 | |
F1012Contextual Info: polyfet rf devices F1012 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
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f1012 | |
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Contextual Info: F10125 • F10525 ^ QUAD ECL TO TTL TRANSLATOR F10K VOLTAGE COMPENSATED ECL DESCRIPTION — The F10125 and F10525 are Quad Translators fo r converting F10K logic levels to TTL logic levels. D ifferential inputs allow each c irc u it to be used as an inverting, non-inverting or as a d iffe re n tia l receiver. An Internal reference voltage |
OCR Scan |
f10125f10525 | |
F10124
Abstract: fairchild ECL F10524
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f10124f10524fairchild ecl | |
AK 1230Contextual Info: F10125 . F10525 QUAD ECL TO TTL TRANSLATOR F10K VOLTAGE COMPENSATED ECL DESCRIPTION — The F10125 and F10525 are Quad Translators for converting F10K logic levels to TTL logic levels. Differential inputs allow each circuit to be used as an inverting, non-inverting or as a differential receiver. An Internal reference voltage |
OCR Scan |
f10125f10525ak 1230 | |
eel -16-2005
Abstract: schmitt trigger ecl F10125 F10525 Scans-0017359
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f10125f10525eel -16-2005schmitt trigger ecl+1 | |
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Contextual Info: F10124 • F10524 QUAD TTL TO ECL TRANSLATOR DESCRIPTION — The F10124 and F10524 are Quad Translators, designed to convert TTL logic levels to 10K ECL logic levels. The inputs are compatible with standard or with Schottky TTL. A Common Enable input Ec , when LOW, holds all inverting |
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f10124f10524 | |
F10524DCContextual Info: F10124 • F10524 QUAD TTL TO ECL TRANSLATOR DESCRIPTION — The F10124 and F10524 are Quad Translators, designed to convert TTL logic levels to 10K ECL logic levels. The inputs are compatible with standard or with Schottky TTL. A Common Enable input Ec , when LOW, holds all inverting |
OCR Scan |
f10124f10524f10524dc | |
QP-104
Abstract: QP-112
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qp-104qp-112 | |
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sot23 w32
Abstract: SOT23 DMB BA39-00628A TESA4982 HED55XXU12 BA41-00725A SMD Code 12W SOT-23 A3212ELH/HED55XXU12 LF80537NE0301MN w342 9g
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wll3141ba44-00238aba44-00243aba44-00162a+16 | |
STK 442 - 130
Abstract: stk 412 -130 BT 342 project ID78K0S-NS IE-78K0S-NS IE-78K0S-NS-A RA78K0S stk 412 - 240 STK 412 240 stk 412 170
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id78k0s-ns78k0su16584jj2v0um00u16584jj2v0um+10 | |
tektronix 213 dmm
Abstract: Tektronix DMM 353 u17366 ID78K0-QB QB-78K0KX1H F03a0 U17468E BDW32 asm106 uPD78Fxxx
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id78k0-qbu18492jj1v0um00u18492jj1v0umtektronix 213 dmm+8 | |
A1015
Abstract: IE-703002-MC V850E1 V850ES V853
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u16454ej1v0uma1015ie-703002-mcv850e1+2 | |
tektronix 213 dmm
Abstract: IECUBE ID78K0-QB U18371E A5004 A 42 B331 ASM-142
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id78k0-qbu19611jj1v0um00u19611jj1v0umc0901-a-01+6 | |
stk 282 270
Abstract: STk 442 120 STK 411 - 230 E stk 412 -410 PC-9821 CC78K4 ID78K4-NS IE-78K4-NS RA78K4 U15255J
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id78k4-nsu17802jj1v0um00u17802jj1v0umstk 282 270+8 | |
diode SFR-136
Abstract: SFR 136 213-DMM 7 segment E10501 STK 415 90 CC78K0 CC78K0R CC78K0S RA78K0R stk 282
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78k0r78k0su18010jj2v0um002u18010jj2v0um+10 | |
ct f200a
Abstract: IOR 514 F0c70 uPD703201 ID850QB U14559J V850E1 V850ES F03a0
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id850qbu17435jj1v0um00u17435jj1v0umct f200a+7 | |
stk 496 430
Abstract: STK 403 130 os E10014 E10014 STK 443 530 stk 412 490 stk 413 430 V850E/IA1 STK 402 120 Y E1020
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sm850u16218jj1v0umu16218jj1v0um001fax044435-9608+10 | |
nec A1008
Abstract: f4024 Ff350 NEC a1009 AD002 a5307 ff-310 STk 442 120 F0403 FF804
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id78k0s-qb78k0su18247jj1v0um00u18247jj1v0um+10 | |