VCE10 Search Results

YTS2222A

Abstract: transistor marking 1p Z
Contextual Info: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage

Contextual Info: SKiM 500 GD 128 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 450 / 340 900 / 680 ± 20 1390 –40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

TXC oscillator

Abstract: DP83924AVCE DP83924B DP83924BVCE DP8392C Npi pulse transformer DP83924A
Contextual Info: DP83924BVCE Quad 10 Mb/s Ethernet Physical Layer - 4TPHY • Programmable MAC Interface supports most standard 7 signal MAC interfaces The DP83924B Quad 10Mbps Ethernet Physical Layer ■ Twisted Pair Transceiver Module 4TPHY is a 4-Port Twisted Pair PHYsical Layer Trans– On-chip filters for transmit outputs

DP83924A

Contextual Info: National Semiconductor October 1997 DP83924A Quad 10 Mb/s Ethernet Transceiver General Description Features The Quad 10 Mb/s Ethernet Transceiver is a 4-Port Encoder/Decoder ENDEC that includes all the circuitry required to interface four Ethernet Media Access Control­

en iec 60721-3-3

Abstract: semikron skim semikron thermal switch
Contextual Info: SKiM 500 GD 128 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 450 / 340 900 / 680 ± 20 1390 – 40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

Contextual Info: TOS H IB A DISCRETE/OPTO 45E TDTTESD D GGIT'HO TOSHIBA TRANSISTOR 2 «TOS4 YTS2222 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Z.cí - 3 FOR GENERAL PURPOSE USE Unit in mm MIDIUM-SPEED SWITCHING AND AUDIO TO +ÛS 2 .5 -a s VHF FREQUENCY APPLICATION + < 125

Contextual Info: SKiM 500 GD 128 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 450 / 340 900 / 680 ± 20 1390 –40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

Contextual Info: SKiM 250 GD 128 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 235 / 180 470 / 360 ± 20 625 –40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

Contextual Info: SKiM 400 GD 128 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 350 / 270 700 / 540 ± 20 960 – 40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

400GD128D

Contextual Info: SKiM 400 GD 128 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 350 / 270 700 / 540 ± 20 960 –40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

500GD

Contextual Info: SKiM 500 GD 128 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 450 / 340 900 / 680 ± 20 1390 – 40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

Contextual Info: SKiM 350 GD 128 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 300 / 230 600 / 460 ± 20 925 – 40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

TIL78

Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
Contextual Info: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE

TIL78

Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

TIL78

Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

P1027

Abstract: 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

TIL78

Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

Contextual Info: MCC TM Micro Commercial Components 
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N2905A HDWXUHV • PNP General Purpose Amplifier General-purpose Transistor for Switching and Amplifier

vqe 13

Abstract: APT35G60BN APT35G50BN APT35G60
Contextual Info: D • 0 5 5 ? ^ OOOObSl MêT aa d v a n c e d W æ PO W ER 'T C .V M rÆ Ê Ê T e c h n o l o g y APT35G60BN APT35G50BN PO W ER 3^0 « A V P 600V 500V 35A 35A M O S IV IG B T N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

A642 transistor pnp

Abstract: a603 transistor A608 transistor pnp transistor A608 A608 N A608 A1480 A642 transistor to 92 A641 NPN transistor A641 transistor
Contextual Info: SYMBOLS & CODES EXPLAINED S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12

PN3563

Contextual Info: I V , PN3563 PN5130 PN5132 NPN SILICON RP SMALL SIGNAL TRANSISTORS CASE TO-92A THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS. PN3563 PN5130 PN5132 EBC fill PN3563 ABSOLUTE MAXIMUM RATINGS PN5I3Q PN5132 Collector-Base Voltage

Contextual Info: REFLECTIVE SWITCH T-41-13 MARKTECH INTERNATIONAL 1ÛE D 57^55 00G04S2 4 MTRS1060, MTRS1070 APPLICATIONS • TAPE EDGE SENSOR • PAPER POSITION SENSOR FOR PRINTERS AND FACSIMILES • INDEX SENSOR FOR FLOPPY DISC DRIVE • BAR CODE SCANNING FEATURES • •

Contextual Info: BF 391 • BF 392 ■ BF 393 NPN HIGH VOLTAGE VIDEO AMPLIFIERS CASE TO-92A THE BP391, BF392, BF393 ARE NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO AMPLIFIERS IN TELEVISION RECEIVERS. THEY FEATURE 200V MINIMUM COLLECTOR-EMITTER BREAKDOWN VOLTAGE AND