V2102 Search Results

Contextual Info: V2102-49 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq10k Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.0 Maximum Conversion Loss (dB)

C20 diode, TO

Abstract: 10 35 DIODE diode 5V6 DIODE 748 DIODE zener diode c20 diode zener c2 6 FMMD2837 C2 6 zener diode c20 diode
Contextual Info: SOT-23 TR A N S IS T O R S & D IO D ES SILICON ABRIJPT TUNER D ODES Type FMMV2101 FM M V2102 FM M V 2103 F M M V 2104 F M M V 2105 FM M V 2106 FM M V 2107 FM M V 2108 F M M V 2109 Reverse breakdown Voltage V R Volts max. 30 30 30 30 30 30 30 30 30 Nominal capacitance

v2308

Abstract: EP1014 V2205
Contextual Info: TABLE OF CONTENTS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance SLIGHT HYPERABRUPT AB R U PT Page No. 1 N 9 5 1 - 1 N 9 5 6 . 1N4786 -1 N 4 8 1 5 A , B .

FMMV105G

Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
Contextual Info: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications

V2103

Abstract: V2109 V2105
Contextual Info: PLESSEY SEP1IC0ND/DISCRETE ~ 03 ÔF§7BB 0S3 3 OOObSTT 4 T -o 7 ~ t? Silicon variable capacitance F M M V 2 1 0 1 -F M M V 2 1 0 9 A B S O L U T E M A X IM U M R A T IN G S Value Unit Parameter Sym bol Reverse voltage Vr 30 V Forward current If 20 mA C H A R A C T E R IS T IC S at Tamb = 25°C .

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

ZC2800E

Abstract: BAS70-05 BAS70-06 ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A ZC833A
Contextual Info: SOT-23 TRANSISTORS & DIODES SCH O TTKY BARRIER DIO DES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz

Contextual Info: FMMV2101 to FMMV2109 SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE PIN CONFIGURATION PARTMARKING DETAIL: FMMV2101 - 6R V2102 - 6F FMMV2103 - 6G FMMV2104 - 6H FMMV2105 - 6J FMMV2106 - 6K FMMV2107 - 6L FMMV2108 - 6M FMMV2109 - 6N 1 1 T ABSOLUTE MAXIMUM RATINGS

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

v2308

Abstract: V23083 v2303 V2307 sq201 MV2201 EP1014 V2306 V2107 V2209
Contextual Info: TA B L E OF C O N TE N TS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance S LIG H T HYPERABRUPT Page No. ABRUPT H A 1 9 1 5 A - H A 1 9 5 0 A , B, C 1N951 - 1 N 9 5 6 . 1N 4786- 1N 4815A , B . . . 1N 5 1 3 9 - 1 N 5 1 4 8 5 A , B . .

Contextual Info: RapID Platform - PROFINET Network Interface 2-Port, Class B Connectivity Solution The RapID Platform Network Interface is a pre-tested module that manages the industrial protocol and network traffic with a single host processor interface The interface contains everything needed including the

KV2104

Abstract: KV2101 KV2101A KV2102 KV2102A KV2103 KV2801 KV2802 KV2803 KV2804
Contextual Info: L Ô R A L / F R E â UEN CY/SE NI CO ND Tb D • 557Tb21 DOODälb 7 ■ UHF HYPERABRUPT TUNING VARACTORS -~ “ “ ì 96D DESCRIPTION 00816 D FEATURES U H F Diodes: These hyperabrupt diodes offer higher Q's than th eir V H F counterparts, but have slightly lower capacitance

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor