FMMV2109 Search Results

Contextual Info: FMMV2101 to FMMV2109 SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE PIN CONFIGURATION PARTMARKING DETAIL: FMMV2101 - 6R FMMV2102 - 6F FMMV2103 - 6G FMMV2104 - 6H FMMV2105 - 6J FMMV2106 - 6K FMMV2107 - 6L FMMV2108 - 6M FMMV2109 - 6N 1 1 T ABSOLUTE MAXIMUM RATINGS

Contextual Info: FMMV2101 SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES ISSUE 3 - JANUARY 1996 to FMMV2109 O_ PIN CONFIGURATION PARTMARKING DETAILS SEE TUNING CHARACTERISTICS 1 t ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Reverse Voltage VALUE U N IT Vr

zener diode marking E7

Abstract: 5V6 DIODE FMMV2107 zener diode E7 Zener Diode LF marking DIODE ZENER DUAL 16 FMMD6100 FMMV2102 FMMD2837 FMMV2104
Contextual Info: SOT-23 TRANSISTORS & DIODES SILICO N ABRIJPT TUNER D O DES Type FMMV2101 FMMV2102 FMMV2103 FMMV2104 FMMV2105 FMMV2106 FM M V2107 FMMV2108 FMMV2109 Reverse breakdown Voltage V R Volts max. 30 30 30 30 30 30 30 30 30 Nominal capacitance at V R= 2V, f =1MHz ^•tot PF

FMMV2107

Abstract: PARTMARKING at FMMV2101 FMMV2103 FMMV2104 FMMV2105 FMMV2108 FMMV2109 6R SOT23 DSA003706
Contextual Info: FMMV2101 to FMMV2109 SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES ISSUE 3 – JANUARY 1996 ✪ PIN CONFIGURATION PARTMARKING DETAILS SEE TUNING CHARACTERISTICS  2 1 3 ! SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Reverse Voltage VR 30 V

diodes SY 200

Abstract: SY 165
Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES ISSUE 3 - JANUARY 1996 FM M V2101 FM M V2109 O_ PIN CONFIGURATION PARTMARKING DETAILS SEE TUNING CHARACTERISTICS 1 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L VALUE UNIT 30 V Reverse Voltage

2N3819 spice model

Abstract: varactor APPLICATION construction of varactor diode 1GHz vco bfr90 equivalent 0-30v variable power supply BBY40 spice 2N3819 Application Note 2N3819 equivalent transistor 2N3819
Contextual Info: Application Note 9 Issue 2 January 1996 Zetex Variable Capacitance Diodes Neil Chadderton Introduction The advent of varactor diodes has made a huge impact in many areas of electronic design, which is only too evident in todays consumer products. Formerly, where bulky or unreliable

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

ZC830B

Abstract: zc840 ZC830 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
Contextual Info: SOT23 #• HYPERABRUPT TUNER DIODES Pinout : 1-Cathode, 3-Anode N om inal Capacitance at V r = 2 V , f=1MHz Reverse Breakdown Voltage Type Capacitance Ratio at f=1MHz C2/C2o Ctot Q at V r =3V f=50MHz Device Code VR V M in Typ pF Max pF Min Max Typ pF 25 9.0

ZC930

Contextual Info: SOT23 HYPERABRUPT TUNER DIODES Pinout : 1-Cathode, 3-Anode Nom inal Capacitance at VR=2V, f=1MHz Ctot Reverse Breakdown Voltage Type Vr V Min pF Typ pF Capacitance Ratio at f=1MHz C2/C20 Max pF Q at V r =3V f=50MHz Min Max Typ Device Code ZC830A 25 9.0 10.0

bss170

Abstract: BAT54S/SM NPN Transistor BC817-40 221 sot23 FMMD2837 FMMD2835 FMMD2836 FMMD2838 SM NPN Transistor BC817-40 F2T694B BAR99
Contextual Info: SuperSOT Series ^ A:1 HIGH CURRENT SuperSOT TRANSISTORS {PD=625mW) Pinout: 1-Collector, 2-Emitter, 3-Basa V cbo VCEO le P,o, Type V V mA mW 15 15 3000 625 VcE sat) hFE fl a tlc /V c E m A /V Max V at Iq/I b mA Typ MHz 200/- 3000 / 2 0.10 10 00 /1 0 120 1 5 0 /-

zc840

Abstract: ZC830 ZC830A ZC830B ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
Contextual Info: SOT23 'f r HYPERABRUPT TUNER DIODES Pinout : 1-Cathode, 3-Anode N om inal Capacitance at Vr=2V, f=1MHz Reverse Breakdown Voltage Type Capacitance Ratio at f=1MHz C2/C2o Ctot Q at V r =3V f=50MHz Device Code VR V M in pF Typ pF Max pF Min Max Typ ZC830A 25

6H MARKING

Abstract: ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824 ZC825
Contextual Info: E-LINE DIODE SPECIFICATIONS SCHOTTKY BARRIER DIODES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications under pulsed conditions include ultra high speed switching, clamping, sampling gates and pulse shaping.

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog