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    Eaton Corporation HCM1A2213V2-101-R

    Power Inductor (SMD), 100 uH, ? 20%, 6.4 A, Shielded, 8 A, 22.48mm x 22mm x 13mm - Tape and Reel (Alt: HCM1A2213V2-101-R)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HCM1A2213V2-101-R Tape & Reel 19 Weeks, 5 Days 100
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    • 100 $7.77
    • 1000 $7.77
    • 10000 $7.77
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    Mouser Electronics HCM1A2213V2-101-R
    • 1 $11.47
    • 10 $9.42
    • 100 $7.78
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    • 10000 $7.78
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    Avnet Abacus HCM1A2213V2-101-R Tape & Reel 28 Weeks 100
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    Eaton Corporation HCM1A1104V2-101-R

    Power Inductor (SMD), 100 uH, ? 20%, Shielded, 10.8mm x 10mm x 4mm - Tape and Reel (Alt: HCM1A1104V2-101-R)
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    Avnet Americas HCM1A1104V2-101-R Tape & Reel 500
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    Mouser Electronics HCM1A1104V2-101-R
    • 1 $1.57
    • 10 $1.34
    • 100 $0.95
    • 1000 $0.75
    • 10000 $0.70
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    Eaton Corporation MCL1608V2-101-R

    Multilayer Inductor, 100 nH, 1.2 Ohm, ? 5%, 700 MHz, 300 mA, 0603 [1608 Metric] - Tape and Reel (Alt: MCL1608V2-101-R)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MCL1608V2-101-R Tape & Reel 12 Weeks 4,000
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    • 10000 $0.03
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    Mouser Electronics MCL1608V2-101-R
    • 1 $0.11
    • 10 $0.06
    • 100 $0.05
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    • 10000 $0.05
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    Avnet Abacus MCL1608V2-101-R Tape & Reel 15 Weeks 4,000
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    Eaton Corporation HCM1A0805V2-101-R

    Power Inductor (SMD), 100 uH, ? 20%, Shielded, 8.1mm x 8mm x 5.4mm - Tape and Reel (Alt: HCM1A0805V2-101-R)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HCM1A0805V2-101-R Tape & Reel 500
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    Mouser Electronics HCM1A0805V2-101-R
    • 1 $1.38
    • 10 $1.17
    • 100 $0.83
    • 1000 $0.66
    • 10000 $0.61
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    onsemi MMBV2101LT1G

    Tuning Diodes 30V C2/C30 = 2.5-3.2 - Tape and Reel (Alt: MMBV2101LT1G)
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    Avnet Americas MMBV2101LT1G Tape & Reel 3,000
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    Bristol Electronics MMBV2101LT1G 1,074
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    Vyrian MMBV2101LT1G 5,506
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    V2101 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diodes SY 200

    Abstract: SY 165
    Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES ISSUE 3 - JANUARY 1996 FM M V2101 FM M V2109 O_ PIN CONFIGURATION PARTMARKING DETAILS SEE TUNING CHARACTERISTICS 1 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L VALUE UNIT 30 V Reverse Voltage


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    v2101v2109f-250mfmmv2101i+7fmmv2103fmmv2104fmmv2105fmmv2107fmmv21q8diodes sy 200sy 165 PDF

    DUAL DIODE

    Abstract: g28 SOT23 FMMD7000 FMMD2836 FMMD6100 FMMD2838 BAW* diode FMMD2835 FMMD2837 5V6 DIODE
    Contextual Info: SOT-23 TRANSISTORS & DIODES SILICON ABRIJPT TUNER D ODES Type FM M V2101 F M M V 2 10 2 FM M V 2 1 0 3 FM M V 2 1 0 4 FM M V2105 FM M V 2 1 0 6 FM M V 2 1 07 FM M V 2 1 0 8 FM M V 2 1 0 9 max. Capacitance ratio f=1M Hz C 2/C 20 min. Q at V „ = 3V f = 50MHz


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    ot-23c2/c2050mhzfmmv2101+16fmmv2102fmmv2103fmmv2104fmmv2105fmmv2106fmmv2107dual diodeg28 sot23fmmd7000fmmd2836fmmd6100fmmd2838baw* diodefmmd2835fmmd28375v6 diode PDF

    marking e6

    Contextual Info: R.F. TRANSISTORS AND DIODES TABLE 5: SOT-23 ABRUPT TUNER DIODES Type Reverse breakdown Voltage V R Volts max. FM M V2101 FM M V 21 0 2 FM M V 21 0 3 F M M V 21 0 4 FM M V 21 0 5 FM M V 21 0 6 F M M V 2107 F M M V 2108 FM M V 21 0 9 30 30 30 30 30 30 30 30


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    ot-232/c30v2101zc2811+5zc2800ezc2810ezc2811ezc5800emarking e6 PDF

    x band varactor diode

    Contextual Info: V2101 m SILICON HYPERABRUPT TUNING VARACTOR P A C K A G E S TY LE D O -7 D E S C R IP T IO N : M A X DUX 2.667 T h e A S I K V2101 is a Silicon fllA. Hyperabrupt Tuning Varactor Diode Designed for UH F Applications up to 800 M H z.T h e Cathode is Indicated by


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    kv2101x band varactor diode PDF

    MV2112

    Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES V2101 - MV2115 MV2201 - MV2215 TYPE NUMBER V2101 MV2102 MV2103 MV2104 MV2105 MV2106 MV2107 MV2108 MV2109 MV2110 MV2111 MV2112 MV2113 MV2114 MV2115 MV2201 MV2203 MV2205 MV2207


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    mv2101mv2115mv2201mv2215+6mv2102mv2103mv2104mv2105mv2106mv2112 PDF

    FMMV105G

    Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
    Contextual Info: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications


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    10/iazc2800zc2811zc5800+12zc2800-zc5800ot-23zc2800erzc2810ezc2811efmmv105gfmmv2109zc820zc821zc822zc823zc824 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268 PDF

    V2101

    Abstract: diode mv2105 SOT23 package diodes MV2105* equivalent
    Contextual Info: MOTOROLA Order this document by V2101LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical


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    mmbv2101lt1/dot-23mmbv2101lt1mmbv2103lt1+10mmbv2105lt1mmbv2107lt1mmbv2108lt1mmbv2109lt1mv2101v2104v2101diode mv2105sot23 package diodesmv2105* equivalent PDF

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    111iimz5558z5555z5556+11mz5557powec rm 1110rm 1100 powecmpc1000transistors jx 6822 ainverter welder 4 schematicsaa 14ztransistor si 6822stg 8810pl 15z diodegermanium transistor PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175 PDF

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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    transistors bc 557cbf366smd code 307cf199 transistor+62n5793bc413motorola zener diode marking code z7equivalent of transistor bc212 bc 214bc107c motorola2n555 PDF

    ZC2800E

    Abstract: BAS70-05 BAS70-06 ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A ZC833A
    Contextual Info: SOT-23 TRANSISTORS & DIODES SCH O TTKY BARRIER DIO DES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz


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    ot-23zc2800ezc2810ezc2811e+9zc5800eir-10mabas70-05bas70-06zc2800-zc5800zc830azc831azc832azc833a PDF

    Contextual Info: V2101 to FMMV2109 SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE PIN CONFIGURATION PARTMARKING DETAIL: V2101 - 6R FMMV2102 - 6F FMMV2103 - 6G FMMV2104 - 6H FMMV2105 - 6J FMMV2106 - 6K FMMV2107 - 6L FMMV2108 - 6M FMMV2109 - 6N 1 1 T ABSOLUTE MAXIMUM RATINGS


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    fmmv2101fmmv2109fmmv2102fmmv2103+5fmmv2104fmmv2105fmmv2106fmmv2107fmmv2108 PDF

    Contextual Info: V2101 SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES ISSUE 3 - JANUARY 1996 to FMMV2109 O_ PIN CONFIGURATION PARTMARKING DETAILS SEE TUNING CHARACTERISTICS 1 t ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Reverse Voltage VALUE U N IT Vr


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    fmmv2101fmmv2109v2101h7g570 PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503 PDF

    V2103

    Abstract: V2109
    Contextual Info: SILICON EPICAP DIODES . . . designed in the popular P LA S TIC PA CK A G E for high volum e require­ m ents of FM Radio and TV tuning and A FC , general frequency control and tuning applications; providing solid-state reliability in replacem ent of m echanical tuning m ethods.


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    mv21xxmmbv21xxlt1mmbv2101lt1mmbv2103lt1+8mmbv2105lt1mmbv2107lt1mmbv2109lt1mv2101mv2103mv2105v2103v2109 PDF

    Contextual Info: FQV2111 • V2101 · FQV291 · FQV281 · FQV271 · FQV261 FlexQTMII 3.3 Volt Synchronous x9 First-In/First-Out Queue Memory Configuration Part Number 524,288 x 9 262,144 x 9 131,072 x 9 65,536 x 9 32,768 x 9 16,384 x 9 FQV2111 V2101 FQV291 FQV281 FQV271


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    fqv2111fqv2101fqv291fqv281+2fqv271fqv261 PDF

    v2308

    Abstract: V23083 v2303 V2307 sq201 MV2201 EP1014 V2306 V2107 V2209
    Contextual Info: TA B L E OF C O N TE N TS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance S LIG H T HYPERABRUPT Page No. ABRUPT H A 1 9 1 5 A - H A 1 9 5 0 A , B, C 1N951 - 1 N 9 5 6 . 1N 4786- 1N 4815A , B . . . 1N 5 1 3 9 - 1 N 5 1 4 8 5 A , B . .


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    FQV2111-7

    Contextual Info: FQV2111 • V2101 · FQV291 · FQV281 · FQV271 · FQV261 FlexQTMII 3.3 Volt Synchronous x9 First-In/First-Out Queue Memory Configuration Part Number 524,288 x 9 262,144 x 9 131,072 x 9 65,536 x 9 32,768 x 9 16,384 x 9 FQV2111 V2101 FQV291 FQV281 FQV271


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    fqv2111fqv2101fqv291fqv281+3fqv271fqv261fqv2111-7 PDF

    MV2107

    Abstract: BV2108 MV2113 BV-2108
    Contextual Info: MOTOROLA SEMICONDUCTOR V2101L thru MMBV2109L V2101 thru MV2115 TECHNICAL DATA W V O L T A G E -V A R IA B L E C A PA C ITA N C E D IO D ES C 6.8-100 pF 30 VOLTS SILIC O N EPIC A P D IO D ES % C A S E 318-07 TO-236AB SOT-23 V2101L thru MMBV2109L C A SE 182-02


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    mmbv2101lmmbv2109lmv2101mv2115+6o-236abot-23mv2107bv2108mv2113bv-2108 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor PDF

    MV2110

    Abstract: MV2109 positive lead dioda bridge MV2112 DIODE CQ MV2101 MV2102 MV2103 MV2107 mv2110 diode
    Contextual Info: V2101 SILICON thru MV2115 v v c - W IV O LTA G E -V A R IA B LE CAPACITANCE DIODES 6 .8 -1 0 0 p F 30 V O L T S SILICON EPICAP DIODES . . . designed in the popular P L A S T IC P A C K A G E for high volume requirements of FM Radio and T V tuning and A F C , general frequency


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    mv2101mv2115mv2110mv2109 positive lead+7dioda bridgemv2112diode cqmv2102mv2103mv2107mv2110 diode PDF

    FQV2101-6

    Abstract: FQV2111-6 FQV281-6 FQV291-6
    Contextual Info: FQV2111 • V2101 • FQV291 • FQV281 • FQV271 • FQV261 FlexQ II 3.3 Volt Synchronous x9 First-In/First-Out Queue Memory Configuration Part Number 524,288 x 9 262,144 x 9 131,072 x 9 65,536 x 9 32,768 x 9 16,384 x 9 FQV2111 V2101 FQV291 FQV281


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    fqv2111fqv2101fqv291fqv281+6fqv271fqv261fqv2101-6fqv2111-6fqv281-6fqv291-6 PDF

    FQV2101-6

    Abstract: FQV2111-6 FQV2811 FQV291-6
    Contextual Info: FQV2111 • V2101 · FQV291 · FQV2811 · FQV271 · FQV261 FlexQTMII 3.3 Volt Synchronous x9 First-In/First-Out Queue Memory Configuration Part Number 524,288 x 9 262,144 x 9 131,072 x 9 65,536 x 9 32,768 x 9 16,384 x 9 FQV2111 V2101 FQV291 FQV281 FQV271


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    fqv2111fqv2101fqv291fqv2811+6fqv271fqv261fqv281fqv2101-6fqv2111-6fqv291-6 PDF