FREQ10K Search Results

Contextual Info: V2102-49 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq10k Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.0 Maximum Conversion Loss (dB)

v2112

Contextual Info: V2112-49 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandKu Test Freq10k Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0 Maximum Conversion Loss (dB)

2N3055JANTX

Contextual Info: 2N3055+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)15 Absolute Max. Power Diss. (W)115# Maximum Operating Temp (øC)200# I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)8.0 @I(C) (A) (Test Condition)10

Contextual Info: KM7017 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)80â V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)100õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1101 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)180m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.25 h(FE) Max. Current gain.50

Contextual Info: 2N2271 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15ã V(BR)CBO (V)20 I(C) Max. (A)500m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.50 h(FE) Max. Current gain.100

Contextual Info: ECG104MP Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)90 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: KM7015 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)50â V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)100õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3055+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)15 Absolute Max. Power Diss. (W)115# Maximum Operating Temp (øC)200# I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)8.0 @I(C) (A) (Test Condition)10

Contextual Info: BUY28 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)420 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)15m» @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

datasheet ic 7809

Abstract: IC 7809 pin diagram CD Laser pickup focus tracking IC 7809 ic 7809 datasheet 7809 A13944 sanyo optical pickup unit LV1605M function ic 7809
Contextual Info: Ordering number : ENN*7809 Preliminary SANYO Semiconductors DATA SHEET Monolithic Linear IC LV1605M Analog Signal Processor for CD Players Overview The LV1605M implements the analog signal processing and servo control required by compact disc players, and, when

Contextual Info: 2N3461 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)110# I(CBO) Max. (A)3.0m÷ @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).40 @I(C) (A) (Test Condition)1.0

2n1102

Contextual Info: 2N1102 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)180m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.25 h(FE) Max. Current gain.40

Contextual Info: 2N1431 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)180m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.75 h(FE) Max. Current gain.150

AN592

Abstract: 16C54 PIC16C54 PIC16C5X MPASM code macro endm 0A79
Contextual Info: AN592 Frequency Counter Using PIC16C5X The PIC16C5X has one 8-bit timer Timer0 , which can be used with an 8-bit prescaler. The prescaler runs asynchronously, hence it can count a very high frequency. The minimum rise and fall times of the input frequency are specified to be 10 ns, so the fastest clock

Contextual Info: MP1549 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)15 Absolute Max. Power Diss. (W)90 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)3.0mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N442 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)50 I(C) Max. (A)15 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)95õ I(CBO) Max. (A)8.0m @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)0.3Â @I(C) (A) (Test Condition)12

0A79

Abstract: 0a4e AN592 0A80 16C54 PIC16C54 PIC16C5X 05b1 002C
Contextual Info: AN592 Frequency Counter Using PIC16C5X The PIC16C5X has one 8-bit timer Timer0 , which can be used with an 8-bit prescaler. The prescaler runs asynchronously, hence it can count a very high frequency. The minimum rise and fall times of the input frequency are specified to be 10 ns, so the fastest clock

00CF

Abstract: 0A79 0A79 diode 0A79 datasheets Prescaler 16C54 AN592 PIC16C54 PIC16C5X 0A54
Contextual Info: AN592 Frequency Counter Using PIC16C5X The PIC16C5X has one 8-bit timer Timer0 , which can be used with an 8-bit prescaler. The prescaler runs asynchronously, hence it can count a very high frequency. The minimum rise and fall times of the input frequency are specified to be 10 ns, so the fastest clock

Contextual Info: KM7016 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60â V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)100õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1059 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15ã V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)180m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.100