V 149 Search Results

Contextual Info: MEMORY Unbuffered 2 M x 72 BIT .s> 'N RONOU SDYNIAMIC RAM CIIMM Ml ¡02¡S072BZ-75/-10;2h 10. # • ’’’ .1 ” 1 m w i E \ v , v , ,v ,\W v , T l r , v , v , v , v , v , v , v , v , v , v , v , v ,v , v , v , v , v , v , v , v , v , v , v , \ \ \ \ \ \

Contextual Info: MEMORY 2 M x 64 BIT . s> 'N Ml ROI RAM [ IM M wl1% àir 1 EiTwPwl In mm >DYN A PMIC ¡02:S064BZ-7 5/-10Î>/- 10. I ’! » : ’: » : » ,v ,\W v ,ÎT ( rS ,v ,v ,v , v ,v ,v ,v ,v , v ,v ,v ,v , v ,v ,v ,v , v ,v ,v ,v ,v , v ,\\\ \v

2SA1254

Abstract: 2SC2149 2SC2216
Contextual Info: - ¡i a • 2 S C 2 149 n , mmm, s ììi !öS Uè mi # ^ - SS VcEo V 'M io t ti Vebo(V) lc(mA) * « # Ä : •<"/7 V X ¿ m ^ ' - * ? y ? ■ X h ') y 7"5 -i y ' ' -~J >T— V S fê S S fê M il 12 hFE 290 Tj (°C) 200 a s Vceo(V) Vebo(V) s , sêjgffl, a is i * f f l

2SA1516

Abstract: 2sa1494 2SA1500 2SA1515 2sc3855 2SC3858 2SC3859 2SA1492 2SA1493 2SA1496
Contextual Info: - 38 T a = 2 5 tC , * E P Í á T c = 2 5 ^ m & £ 2S A 1491 2SA1492 y*r y 2SA1493 VcBO Vc e o (V) (V) IC(DC) (A) S Pc Pc* ICBO (W) (W) ( U A) % , hF E Vc b (V) (min) W t# (max) 14 (Ta=25^) îc/î E <A) VcE (V) [*EPIâtypfiS] VcE(sat <,max ) (V) PSW -140

P552

Contextual Info: P535/IE T e t r o d e Pulse Mod ulator P552/,E P535/IE & P552/IE C A T H O D E. Indirectly-heated, oxide-coated Voltage Nom inal current 26 2 V A 1.2 35.0 7.0 pF pF pF 149 65.2 mm. mm. 194 g. P535/IE 15,000 V 1,250 V 30 m A P552/IE 20,000 V 1,250 V 30m A 15 A

4046 FSK

Abstract: BELL212A ST18933 ST7544 ST75C502 TQFP44 TQFP80 tdt7 ST TX01
Contextual Info: ST75C502 V.32bis/V.17 HIGH SPEED MODEM DATA PUMP . . . . . . . . . . . . 2 CHIP DATA PUMP ST75C502, ST7544 V.32BIS, V.17, V.33, V.32, V.29, V.27ter, V.22BIS, V.22, V.21, V.23, BELL212A, 103 (SHORT TRAIN INCLUDING V.29/T104) GROUP 3 FAX AT 14400, 12000, 9600, 7200,

LA3 DR2

Abstract: ic MC1 4046 d6142 BELL212A PQFP160 PQFP80 ST7543 ST75C50 TQFP44 vi-213
Contextual Info: ST75C50 V.32bis/V.17 HIGH SPEED MODEM DATAPUMP . . . . . . . . . . . . . . ADVANCE DATA 2 AND 4 -WIRE FULL DUPLEX OPERATION V.32BIS, V.17, V.33, V.32, V.29, V.27ter, V.22BIS, V.22, V.21, V.23, BELL212A, 103 GROUP 3 FAX AT 14400, 12000, 9600, 7200,

LA3 DR2

Abstract: BELL212A PQFP160 PQFP80 ST7543 ST75C50 TQFP44 Audio Signalling Filter IC with Compander
Contextual Info: ST75C50 V.32bis/V.17 HIGH SPEED MODEM DATAPUMP . . . . . . . . . . . . . . ADVANCE DATA 2 AND 4 -WIRE FULL DUPLEX OPERATION V.32BIS, V.17, V.33, V.32, V.29, V.27ter, V.22BIS, V.22, V.21, V.23, BELL212A, 103 GROUP 3 FAX AT 14400, 12000, 9600, 7200,

isi555

Abstract: 1S1598 1S130 1S1302 1S15 1S19 1S1146
Contextual Info: - * tt S Vrrm Vr ft À ft l o , If * IFM i * ft ft VFmax I fsm % ft IS] ft ft t rr n s) C t(p F ) (*V s) U m ax * ÍÜ1 © f t ft ^ 149- ft (V) (V) (ntA) I f ( h A) T (°C ) (U A) V r (V) T C C ) ty p max 1S978 1S981 1S982 1S983 1S984 ft ft ft ft ft 50

2SK1326

Abstract: 2sk1321 2SK1323 1A 30V MOS 2SK1325 2SK1327 K1308 2SK1319 2SK1311 2SK1301
Contextual Info: - 96 - € tt ffl £ j£ m "Æ i f m 1 m \> m, P d/P c h m K fe V* V) * ft * (V) * (A) * (w> Ig s s (max) (A) Vg s (V) % W (Ta=25°C) tï ft (min) (max) V d s (V) (V) (V) (min) (max) V d s (A) (A) (V) gm (min) (typ) V d s (S) (S) (V) Id (A) Id (A) 2SK1301

2SK1500

Abstract: 2SK1502 2SK1535 2SK1537 2SK1513 235n 2501L 2SK1501 2SK1531 2SK1438
Contextual Info: - 108 - ft m % *± £ m & m £ A V* it ft K V, tt m * (V ft * ffi X P d/P c h £ * (W) I* (A) less (max) (A) Vg s (V) (Ta=25T) 1Ï m S Id s (min) (max) V d s (A) (A) (V) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s (S) (V) Id (A) 2SK1497

2SK1487

Abstract: LM 1495 2sk1477 2SK1486 2SK1480 1494z 2SK1470 2SK1482 2SK1491 2SK1465
Contextual Info: - 106 - M % tt « m £ m it Í V Ì 1 % K £ ft ft « V* V P d /P c h *t* (V) * * ft * (A) (W) Ig s s (max) (A) Vg s (V) (min) (A) (max) V d s (A) (V) (Ta=25°C) ft 4# % (min) (max) V d s (V) (V) (V) £ m (min) (S) Id (A) Vd s (V) Id (A) 2SK1465 HS SW

Contextual Info: SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM6J214FE ○ Power Management Switch Applications • • Unit: mm 1.8 V drive Low ON-resistance: RDS(ON) = 149.6 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 77.6 mΩ (max) (@VGS = -2.5 V)

SSM6J214FE

Contextual Info: SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM6J214FE ○ Power Management Switch Applications • • Unit: mm 1.8 V drive Low ON-resistance: RDS(ON) = 149.6 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 77.6 mΩ (max) (@VGS = -2.5 V)

SSM3J114TU

Contextual Info: SSM3J114TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J114TU ○ High-Speed Switching Applications ○ Power Management Switch Applications • • Unit: mm 1.5 V drive Low on-resistance 2.1±0.1 Ron = 526 mΩ max (@ VGS = -1.5 V) Ron = 149 mΩ (max) (@ VGS = -4.0 V)

2sk1197

Abstract: 2501L NEC 2501L 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159
Contextual Info: f m £ Ÿ± m « m m & =£ ü V* * % K V s a * X P d /P c h I* (V) (A) ft 9t (W) Ig s s (max) (A) Vgs (V) to ^33. 3 «B. fé £ Vg s * X ÌD >S (min) (max) V d s (A) (V) (A) n (Ta=25°C) te (min) (max) Vos (V) (V) (V) 9m (min) (typ) V d s (V) (S) (S)

RFP25N06

Abstract: CS3707 92CS-37801 RFM25N06 TA9387
Contextual Info: Standard Power MOSFETs- — - RFM25N06 RFP25N06 File Number 1492 N-Channel Enhancennent-Mode Power Field-Effect Transistors 25 A, 50 V — 60 V rDs on = 0.07 O

KL9505

Abstract: KL9510 powerled
Contextual Info: Datenblatt zu KL9505, KL9508, KL9510, KL9512, KL9515, Version 1.2 Power-LED Power-LED +24 V 0V +24 V +Uo Abgriff Uo 0V Abgriff 0 V Powerkontakte Schirm Abgriff Schirm Draufsicht 1 5 2 6 3 7 4 8 0V Kontaktbelegung Netzteilklemme 5 V, 8 V, 10 V, 12 V, 15 V DC

2SK1796

Abstract: 2SK1804 2SK1713 2SK1784 2SK1794 2SK1772 2SK1773 2SK1774 2SK1775 2SK1785
Contextual Info: - 122 - f m £ tt ffl £ æ m i \ V * * K V js * m * Se 3 Vg s * X I* X P d /P c h (V) * * (A) a * (W) I gss (max) (A) Vg s (V) Ä (min) (max) Vd s (A) (V) (A) ft ft ä t ff) (max) V d s (V) (V) (V) (Ta=25tî) 1 Í S m (min) (S) Id (A) Vd s % ? (V) Id

f82c235

Abstract: a19t 82C765 82C235 1NTC0 LG lcd tv tuner 80286 microprocessor schematics 82C601 82c710 sues 1132
Contextual Info: 82C235 System Controller $ ' >"•' fipÉlI «V M M V // S A V A A >V * A * ^ÿV IV fWJ V ÿ . # v . . v K M ^ 0v . 4 v w v v W/ s Single CHIP 286 AT m fÊ P R E L I M I / N A R Y CH!PS* Copyright Nolle* Manual Copyright C 1991, CHIPS aad Technologies. Ine.

APPLICATION for MIN 5758

Abstract: Thyristor 1504 D2228N D4457N D448N D5807N D5809N D758N d4457n m3.2u
Contextual Info: M3 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 40 V 200 V 80 V 400 V 160 V 800 V ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L

D4457N

Abstract: D2228N D448N D5807N D5809N D758N diode 1304 16-04 thyristor
Contextual Info: M6 - Schaltung Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 45 V 200 V 80 V 400 V 170 V 800 V ~ ~ ~ ~ ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L

MN1203

Abstract: Duracell MN1203
Contextual Info: SIZE MN1203 Alkaline Manganese Dioxide Battery MN1203 3LR61 SPECIFICATIONS Minimum No Load Voltage: 4.5 V Minimum On Load Voltage: 4.2V on 15Ohms at 200 Minimum Life 20 H 20 Ohms 1 Hr/Day 3 V Rated Capacity N/A mAh on Ohms to V Volume 80 cm3 Weight 149g Physical Size in mm

Contextual Info: MCO 150 Single Thyristor Module ITRMS = 234 A VRRM = 1200-1600 V ITAV = 149 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 150-12io1 MCO 150-16io1 A3 K4 A3 Symbol Test Conditions ITRMS ITAV TVJ = TVJM