TDT7 Search Results

Contextual Info: TOSHIBA {DI SC RE TE/ OPTO } TT DE § TDT75SD 001b7SÜ TOS H I B A FIELD E FFECT TRANSISTOR TOSHIBA TO SHIBA 2 S K 7 8 9 SILICON N C H A N N E L MOS TYPE , TT - M ° s H TECHNICAL DATA D I S C R E T E / O P T O ) 99D 16750 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

1N4154

Abstract: DO-36 TOSHIBA 1N4154
Contextual Info: TOSHIBA {DIS CR ETE /OP TO} t7 DE I TDT7SS0 dOCHETE 4 | 9097250 TOSHIBA^CDISCRETE/OPTO * — - 6 71 U T -0 5 -0 ¿j .9 .1 9 2 .A S ilic o n E p it a x ia l P la n a r T y p e 1N4154 D io d e TENTATIVE Unit In mm COMMUNICATION AND INDUSTRIAL APPLICATIONS.

sl de

Abstract: opto til
Contextual Info: TOSHIBA {D IS CRETE/ OPTO } 9097250 T O S H IBA SL> P I S C R E T E / O P T O ’ DE p TDT7SS0 DODñGDb S 08006 5òC D T-39-11 S IL IC O N N C H A N N E L M O S T Y P È (7T-M0S) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

TA7274P

Abstract: Gv54 R2RF N2420 24v AUDIO transistor AMPLIFIER CIRCUIT DIAGRAM
Contextual Info: TOSHIBA -, ELECTRONIC OE 90 9 7 2 4 7 TOSHIBA. T TDT7SM7 ÜQ170G3 b ELECTRONIC 02E 12W BTL AUDIO POWER AMPLIFIER Unit in mm The TA7274P is audio power amplifier for consumer application. This IC is applying BTL system in which output couppling condenser and bootstrap condenser are

1h44s

Abstract: Toshiba 1J 9-A vdr 1016
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO 0 ~T-3lS-/3 39C 02381 SSR (NON-ZERO-CROSS TYPE) TOSHIBA iDISCRETE/OPTO} 600V TSZ1J44S 3e] TDT72SD □0D53Û1 1 |~~ Unit 1A MAXIMUM RATINGS C H A R A C TE R ISTIC T SZ 1D 44S Repetitive Peak T SZ 1G 44S Off-state Voltage T SZ 1H 44S

SDL0303A

Abstract: SDL0609 dispersive saw SDL0307B Dispersive Delay Line Delay Lines saw dispersive filter
Contextual Info: 9 097 2 51 TOSHIBA H?~X.? 99D 021 TUBES/LCDS TOSH IB A { T U B E S /LCDS} I e] PE j| TDT7 2 S 1 0 0 0 2 1 0 0 ñ | 7 I ï I' SAW Dispersive Delay Line (DDL) SAW Dispersive Delay Line v r-^ x rr- This is used for pulse-compression chirp radars. Conventional dispersive delay lines of discrete

Contextual Info: TOSHIBA LASER/FBR OPTIC •=)□]>■ TDT72S2 DGIS^SM S ^ B T O S ^ T O S H IB A TOSIIIBA C H IP - C A R R IER L A S E R D IO D E T E N T A T IVE FEATURES TOLD 350B InGaAsP/lnP BURI ED—HETERO STRUCTURE j HIGH SPEED RESPONSE | HIGH RELIABILITY tf ë 0.5ns

TPS805

Abstract: TLN115
Contextual Info: 9097250 TO SH IBA D I S C R E T E / OPTO 90D TOSHIBA -CDISCRETE/OPTQ} ^ 16503 D Î>Ë( TDT72SQ GDlb5Q3 4 W ~ Detector (Photo Diode) Characteristic (Ta = 25°C) Classification Type No. Status Outline Package 'S C IM ) jí ä TPS708 QU> •6- »crUTI; Metal

TA7666P

Abstract: TA7667P TA7666 17MC14 TQT7247 electronic circuit diagram for led ta-7666-p
Contextual Info: TOSHIBA-, ELECTRONIC ÜE 90 972 47 x TOSHIBA. d¥~| TDT7EM7 □ □ 1 7 4 cil 1 | ~ ELECTRONIC 02E TA7666P Ú ÍTA7667P 17491_ 0 i T -5Z-.t3-cn 5 STEP LOGARITHMIC Unit in mm DUAL LED DRIVER Both of the TA7666P and the TA7667P consist of two inverting amplifiers, ten comparators and a reference

251C

Contextual Info: TOSHIBA OIS CRE TE / O PT O D - DE § TDT7E5D 99D 16644 9097250 TOSHIBA DISCRETE/OPTO ¿/ashiht SEMICONDUCTOR DDlbh44 DT-S^-B TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 3 2 5 SILICON N CHANNEL MOS TYPE (7T-MO S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm

2SK944

Abstract: SC-65
Contextual Info: TOSHIBA 2SK944 TDT7SSD 0D232A4 MT2 T O S H IB A FIELD EFFECT T R A N S IS T O R SILIC O N N C H A N N E L M O S T Y P E tt- M O S II 2SK944 INDUSTRIAL APPLICATIONS U nit in mm H IG H S PEED , HIGH C U R R E N T S W IT C H IN G A P P L IC A T IO N S . C H O P P E R R E G U L A T O R , DC-DC C O N V E R T E R A N D M O T O R D R IV E

Contextual Info: TOSHIBA {D IS CRETE/ OPTO } Sh D I S C R E T E / O P T O 9 0 9 7 2 5 0 T O S H IBA DE I TDT7SS0 DODñGDb 5óC 08006 T-39-11 D S IL IC O N N C H A N N E L M O S T YPE (7T-M0S) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

marking Z58

Abstract: ISZ58 02BZ2.2 Toshiba 02BZ2.2 MARKING z57 1SZ57 ISZ59
Contextual Info: TOSHIBA {DISCRETE/OPTO} 3T D eT| TDT7SS0 00023^1 M 90 9 7250 TOSHIBA DISCRETE/OPTO _ _ ZEiMER DIODES (250 mW) 02BZ 39C 02 3 9 1 7"-// o ) SERIES OUTLINE o LOW VOLTAGE REGULATOR AND LOW REFERENCE VOLTAGE APPLICATIONS. FEATURES: • Hermetically Sealded Miniature Glass Package.

Contextual Info: TOSHIBA {DI SC RE TE /OPT O} t7 DE I TDT7SS0 dOCHETE 4 | Â-â2à2à_^_7'-i?5-î5«f -J 1N4154 9097250 TOSHIBA^CDISCRETE/OPTO * — - .A S ilic o n E p it a x ia l P la n a r T y p e D io d e TENTATIVE Unit In mm COMMUNICATION AND INDUSTRIAL APPLICATIONS.

03lg

Abstract: TLRA120C
Contextual Info: TT TOSHIBA {DI SC RE TE /O PT O} 9097250 TOSHIBA DISCRETEAOPTO dF|TDT755 ü 99D 17194 □□17 n 4 0 | D-T-Ml-Äl TLRAI20 GaAIAs RED LIGHT EMISSION I • Excellent Bright Red • All Plastic Mold Type: Colorless Clear Lens • Low Drive Current, Practical Brightness are Achieved

3B500-24S05

Abstract: 3B100-24D15 3B125-24D12 3B250-24S12 3B250-24D05 4560 1213 3B500-12S05 3B250-05S12 TP200 3B250-48S12
Contextual Info: TOTAL POWER INTERNATIONAL TOTAL POWER INTERNATIONAL, INC M7E D m TDT75MS 0000225 3 • T P O 7~-3~7-St 3 W ATT 2:1 IN P U T RANGE SINGLE and DUAL O U TP U T DC - DC CONVERTERS T P 2 0 0 3B S E R IE S J fJ ' Features: 50-75% E fficie n cy 2:1 Input Range Pi In p u t Filter

Contextual Info: TOSHIBA {D IS CRET E/ OP TO } 9097250 TOSHIBA TT <DISCRETE/OPTO De | TDT7SS0 0017477 99D 17477 D T-W-X3 TLP580, TLP58I GaAlAs Infrared Emitting Diode & NPN Silicon Photo-Transisotr The TOSHIBA TLP580 and TLP581 consists of a gallium aluminum arsenide, infrared emitting diode coupled with a silicon photo transistor in a

Contextual Info: 45E D • TDT7E50 0017fl4fl I T OSM T TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N C H A N N EL T Y P E TOSHIBA T DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 03 : V c e s =250V (MIN.) 3 ±0.2 . High Forward Transfer Admittance : | Yfe | =10S (TYP.)

Contextual Info: TOSHIBA •1 TDT7B4Û DDSfiS24 ■ THM3680GOBS/BSG60/70 PRELIMINARY 8,388,608 WORDS X 36 BIT DYNAMIC RAM MODULE Description The THM3680G0BS/BSG is a 8,388,608 words by 36 bits dynamic RAM module which assembled 16 pcs of TC5117400BSJ and 2 pcs of TC5117440BSJ on the printed circuit board. This module is optimized for application to the

Contextual Info: TT TOSHIBA {DISCRETE/OPTO} DE I TDT7S SO DQ1711T 9097250 TOSHIBA <DISCRETE/OPTO> TLS2I6 G aA sP RED L IG H T E M IS S IO N Unit in tom FEATURES: • Super Sright • Red All Plastic Mold Type • Rectangular Type Surface Size 2 * 2nm • Low Drive Current, High Intensity Red Light Emission.

Contextual Info: TOSHIBA {DISCRETE/OPTO} TT 9097250 T O SHIBA <DISCRETE/OPTO DE I TDT7HSD DGlbbS3 1 99D 16653 r - SEMICONDUCTOR D 3 ? . ^ / TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 3 5 7 SILICON N CHANNEL MOS TYPE TT-MOS) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

SF500EX26

Abstract: SF500U26 thyristor 15V 1000A SF500Y26 X103 tOSHIBA THYRISTOR SF500U
Contextual Info: 'TOSHIBA -CDISCRETE/OPTOJ 3e] DE | TDT72SQ 0D02BÖ7 1 l ~ b “7 c <3,5'‘-<30 PHASE CONTROL THYRISTOR SF500EX26 2500V 500A Unit in mm MAXIMUM RATINGS C H A R A C T E R IS T IC Repetitive Peak SF500U26 O ff-State Voltage SF500Y26 and Repetitive Peak R ev erse Voltage

2SA1307

Abstract: 2sc3299 OT-33 Q15A F32 IC
Contextual Info: TOSHIBA ~5b -CDISCRETE/OPTOï 9097250 TOSHIBA DI S C R E T E / O P T O 2SC3299 H IG H C U R R E N T S W IT C H IN G DE|TDT7SSD 56C 07677 QDD7b77 _ SILICON NPNEPITAXIAL TYPE (PCT PROCESS) Unit in mm . 1Q3MAX. 0&2±Ot2 . 7,0 FEATURES: . Low Collector Saturation Voltage

TC528257

Abstract: n724
Contextual Info: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS multiport m em ory equipped with a 262,144-w ords by 8 -bits dynam ic random access m em ory RAM port and a 512-words by 8 -bits static serial access m emory (SA M ) port. The