V/2N3866 EQUIVALENT Search Results

2N3866 equivalent

Abstract: 2n3866a
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN SILICON

2N3866A JAN

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 18 September 2011. MIL-PRF-19500/398K 18 June 2011 SUPERSEDING MIL-PRF-19500/398J 26 January 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY,

sn1016

Abstract: ATIC-17 2N2369 transistor pulse generator LT1016CN8 RCA 2N3866 dual fet q51 74121 application as pulse generator 2N3866 APPLICATION sn7402 equivalent LT1016
Contextual Info: LT1016 UltraFast Precision 10ns Comparator U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO UltraFastTM 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking

Lt1016

Abstract: sn1016 lt1016 equivalent LT1220
Contextual Info: LT1016 UltraFast Precision 10ns Comparator FEATURES • ■ ■ ■ ■ ■ U ■ DESCRIPTIO UltraFastTM 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking

BC140 equivalent

Abstract: 2N4427 equivalent 2n4036 equivalent 2N2270 equivalent 2N3866 equivalent 2N929 2N930 BAW63 BAW63A BFS36
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type

2N4427 equivalent

Abstract: ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

ultronix 105A

Abstract: LT1001 118MF LM129 LT1001AM LT1001C LT1002 74C9 Transistor 2N3866 2N3866 equivalent
Contextual Info: LT1001 Precision Operational Amplifier DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire

LT1001

Abstract: OFM-1A OPTO MOS SWITCH OFM 2N5160 118MF ROSEMOUNT LT301A LM329 2N5160 equivalent 74c906 2N4393
Contextual Info: LT1001 Precision Operational Amplifier DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire

LT1001

Contextual Info: LT1001 Precision Operational Amplifier DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ U ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire

rosemount 118mf

Abstract: OPTO MOS SWITCH OFM 2N5160 equivalent LT1001 KELVIN-VARLEY DIVIDER ultronix 105A 2n5160 OFM-1A 2N5160 ss LT301A
Contextual Info: LT1001 Precision Operational Amplifier DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire

ta66

Abstract: uA733 an47fa Ferronics 21-110J 2n2369 avalanche lt1150 Tektronix P6056 linear technology an47 AN-4745 NE592
Contextual Info: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.

LT1010MH

Abstract: SIMPLE 40w inverter circuit LT1010CT LT1010MK transistor MJE3055 LH0002 LT1010 LT1010CH LT1010CK LT1010CN8
Contextual Info: _ LTIOIO L i n t i A R . TECHNOLOGY Fast ± 150mA Power Buffer F€RTUR€S D€SCRIPTIOn • 20MHz Bandwidth ■ 75V//ts Slew Rate ■ Drives ± 10V into 75fi ■ 5mA Quiescent Current ■ Drives Capacitive Loads > tyF ■ Current and Thermal Limit

t5188

Abstract: LT1010CH LT1010MK LT1010CN8 2N38662 transistor MJE3055 LH0002 LT1010 LT1010CK LT1010CT
Contextual Info: TECHNOLOGY L i n t i A R _ LTIOIO . Fast ± 150mA Power Buffer F€RTUR€S D€SCRIPTIOn • 20MHz Bandwidth ■ 75V//ts Slew Rate ■ Drives ± 10V into 75fi ■ 5mA Quiescent Current ■ Drives Capacitive Loads > tyF ■ Current and Thermal Limit

hp2810

Abstract: LM163 MJE2955 power amplifier circuit HP2-810 LT1010CT MJE3055 equivalent LT1210 as buffer lm10 de transistor MJE3055 LT1010
Contextual Info: LT1010 Fast ±150mA Power Buffer U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1010 is a fast, unity-gain buffer that can increase the output capability of existing IC op amps by more than an order of magnitude. This easy-to-use part makes fast

Contextual Info: LT1010 Fast ±150mA Power Buffer FTEATURES n n n n n n n n n DESCRIPTION 20MHz Bandwidth 75V/µs Slew Rate Drives ±10V Into 75Ω 5mA Quiescent Current Drives Capacitive Loads > 1µF Current and Thermal Limit Operates from Single Supply ≥ 4.5V Very Low Distortion Operation

Motorola transistors MRF 13S

Abstract: 10h350 nanosecond pulse stretcher PN Junction Diode varactor 1720i LT1112 LT1638 LT1720 LT1720CS8 LT1720IS8
Contextual Info: LT1720 Dual, 4.5ns, Single Supply 3V/5V Comparator with Rail-to-Rail Outputs U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ UltraFast: 4.5ns at 20mV Overdrive 7ns at 5mV Overdrive Low Power: 4mA per Comparator Optimized for 3V and 5V Operation Pinout Optimized for High Speed Ease of Use

Datasheet of 7490 IC decade counter

Abstract: VDR-307 SCO-106 ic 7490 pin diagram ic 7490 Decade Counter data sheet 7490 Decade Counter internal diagram of 7490 IC IC sine wave generator for 1Hz-to-100MHz Julie Research Labs SP656
Contextual Info: Application Note 9 August 1986 Application Considerations and Circuits for a New Chopper-Stabilized Op Amp Jim Williams A great deal of progress has been made in op amp DC characteristics. Carefully executed designs currently available provide sub-microvolt VOS ΔT drift, low bias currents

1720i

Abstract: LT1720 LT1720CMS8 LT1720CS8 LT1720IS8 LT1721 data 2n3866 nanosecond pulse stretcher
Contextual Info: LT1720/LT1721 Dual/Quad, 4.5ns, Single Supply 3V/5V Comparators with Rail-to-Rail Outputs U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO UltraFast: 4.5ns at 20mV Overdrive 7ns at 5mV Overdrive Low Power: 4mA per Comparator Optimized for 3V and 5V Operation

1720i

Abstract: LT1720 LT1720CDD LT1720CS8 LT1720IDD LT1720IS8 LT1721 2N3866 equivalent data 2n3866 nanosecond pulse stretcher
Contextual Info: LT1720/LT1721 Dual/Quad, 4.5ns, Single Supply 3V/5V Comparators with Rail-to-Rail Outputs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO UltraFast: 4.5ns at 20mV Overdrive 7ns at 5mV Overdrive Low Power: 4mA per Comparator Tiny 3mm x 3mm x 0.8mm DFN Package LT1720

ci sn7402

Abstract: 10GHz OSCILLATOR pulse generator LT1017 failure rate LT1017 LM111 LT1011 Transistor 2N3866 1Hz-10MHz AM6012 LT1016CS8
Contextual Info: r r m r LT1011/LTlOl 1A n TECHNOLOGY Voltage Com parator FCftTURCS D6SCRIPTIOI1 • Pin-Compatible with LM111 Series Devices ■ Guaranteed Max. 0.5mV Input Offset Voltage ■ Guaranteed Max. 25nA Input Bias Current ■ Guaranteed Max. 3nA Input Offset Current

KF520

Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
Contextual Info: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5

Tektronix 2245a

Abstract: 2M3866 s2 umi 250v 1a Tektronix 2246a s 2 umi 1A 130 degree 250V 2N2369 transistor pulse generator PNP TRANSISTOR 1A 60V s 2 umi 1A 250V LARE RTL 1000 AVS Ralph Morrison Wiley
Contextual Info: um A pplication Note 47 August 1991 TECHNOLOGY High Speed Amplifier Techniques A Designer's Companion for W ideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY