USTE 100 Search Results

en 50022

Abstract: iec 61558 VDE 0570 VA-310 TS-35 USTE 250 transformer 208 V 50 Hz 1440VA uste 100
Contextual Info: Universal-Steuer-, Sicherheits- und Trenntransformator USTE Universal control-, safety isolating- and isolating transformer USTE Range ü Weltspannungen 208 V bis 600 V Worldwide voltages 208 V up to 600 V ü CAGE-CLAMP Anschlussklemmen CAGE-CLAMP terminals

0829A

Abstract: uste 100 0203A 451A4 0668A 303A24
Contextual Info: BLOCK D atum :_ 1 6 .0 5 .0 0 _ T r a n s fo r m a to r e n — E le k tro n ik G m b H & Co. KG V erd e n 0 - 2 7 2 8 3 V e rd e n / A lle r g e z .:_OM.Feide_ gepr.: ¿S /¿ .— AnschluSplan und Absicherungstabelle Typenreihe USTE Connection diagram and protection device settings for US

B2HKF

Abstract: 70N1 B2HKF 125
Contextual Info: TT B2C 70 N TD B2HZ 70 N, TD B2HKF 70 N Typenreihe/Type range_ T T B2C 70 N_ 600_ 800_ 1000_ 1200_ 1400_ 1600* Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Periodische Vorwärts- und

Contextual Info: Voltage Range 5.0 to 45 Volts. 1500 Watt Peak Pulse Power Dissipation 5.0 Watt Steady State FEATURES * * * * * * Glass passivated junction 1500W surge capability at 1ms Excellent clamping capability Uni-directional and Bi-directional 100% Tested -55°C to +175°C

diode byx 32

Abstract: diode byx diode byx 66-1000 DIODE REDRESSEMENT Diodes de redressement LA 7123 byx 21 diodes redressement thomson alimentation decoupage t03h
Contextual Info: S G STC S -¡-THOMSON D | 7 ^ 2 3 7 ÜODaaôT BYX 66-600, R BYX 66-1000, (R) O THOMSON-CSF 'DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02289 d r^oi-n \ HIGH VOLTAGE SUPERSWITCH RECTIFIERS

USTE 250

Abstract: U 318 m
Contextual Info: NOTES: 1 MATERIALS: 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) HOUSING PARTS ARE MADE OF POLYESTER, RATED U.L. 94 V -0 . COLOR IS BLACK, TERMINALS ARE .015/ 0.38) THICK PHOSPHOR BRONZE. TERMINAL PLATING OPTIONS PER E S -8 8 - * * * : A - SELECT GOLD IN CONTACT AREA: 50 MICROINCHES MIN.

Contextual Info: n_l P.C. BOARD THICKNESS NOTES: 1 MATERIALS: 2) 3) A) 5) 6) 7) 8) HOUSING PARTS ARE MADE OF POLYESTER. RATED U.L. 94 V-O. COLOR IS BLACK. TERMINALS ARE .015/<0.38) THICK PHOSPHOR BRONZE, BOTTOM SEAL IS MYLAR. TERMINAL PLATING OPTIONS PER E S -0 0 - * * * :

DO-213AA

Abstract: 12205
Contextual Info: Bi-Directional TVS Part Number 1.4KESD5.0C MLL1.4KESD5.0C MLL1.4KESD5.0CA P4KE6.8C P4KE6.8CA 1.4KESD6.0C MLL1.4KESD6.0C MLL1.4KESD6.0CA P4KE7.5C P4KE7.5CA 1.4KESD6.SC MLL1.4KESD6.5C MLL1.4KESD6.5C A P4KE8.2C 1.4KESD7.0C MLL1.4KESD7.0C MLL1.4KESD7.0CA P4KE8.2CA

gi 9214

Contextual Info: 29827 National Semiconductor DM74ALS29827 10-Bit Buffers and Bus Drivers with TRI-STATE Outputs General Description Features This 10-bit buffer/bus driver is designed for bus interfacing or busses with parity. The inputs include hysteresis which provides improved noise rejection. The device can be dis­

ESAC82-004

Abstract: T151 T930 P8-10
Contextual Info: ESAC82-004< ioa *>3 ' y h+— K SCHOTTKY BARRIER E • : Outline Drawings *3 6 • o-i Features • 1£Vf JEDEC TO-22QAB EIAJ SC-46 Low V f Super high speed sw itch in g . • TV— iWC ttftrC iS Jiif !Si£ Connection Diagram High reliability by planer design.

Contextual Info: s G S —THOMSON S IC I D • 7 C12,:1237 0 0 0 2 3 2 3 ' 7 59C 02 323 O D T-03 -A.I ESM 245-50, R ESM 245-1000, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER OIOOES DIODES DE REDRESSEMENT RAPIDES HIGH VOLTAGE

diode ESM 245-1000

Abstract: ESM 310 esm diodes diode esm245 ESM245-1000 diode ESM 44 QQQ233Q ESM246 ESM245-100 AIO22
Contextual Info: S — T H O M S O N S I C I D • 7 ' 7 59C 0 2 3 2 3 O THOMSON-CSF C 1 2 ,:1 2 3 7 D T-03 2 3 2 3 fi -A.I ESM 245-50, R ESM 245-1000, (R) DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER OIOOES DIODES DE REDRESSEMENT RAPIDES HIGH VOLTAGE

BYX 71 800

Abstract: diode byx alimentation decoupage THOMSON byx 21 BYX 71 600 diodes redressement thomson diode byx 66-1000
Contextual Info: STC D | S G S-¡-THOMSON O 7 ^ 2 3 7 ÜODaaôT BYX 66-600, R BYX 66-1000, (R) T H O M S O N -C S F 'DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02289 d r^oi-n \ HIGH VOLTAGE SUPERSWITCH

n5406

Abstract: ln5400 N5404 N5408 1N5406 lN540 1N5400 motorola 1N54001 1N5408 1N5401
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by lN5400/D DATA hiaB-Lead Standard Recovery Rectifiers 1N5400 thru 1N5408 Lead mounted standard recovey rectifiers are designed for use in power supplies and other applications having need of a device with the following features:

PAS 1066

Contextual Info: THOMSON 0 0 Ü 2 C I5 L T O T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS 59C 02056 _ 0" _ ' - û ^ _ / 7 1 l \ l 3 B 7 ^ K l O O O G 9 , C O R 1 f % ^ 1 1 X 1 3 8 8 3 , ^ 1 SUPERSW ITCH FAST RECOVERY RECTIFIERS DIODES D E RED R ESSEM EN T RAPID ES

philips uv 617 modulator

Abstract: ECG903 ECG908 EC090 ECG90a
Contextual Info: PHILIPS È C G INC bbSBiaa GDGasag s 3.7E D ECG903,ECG908 OPERATIONAL AMPLIFIERS semiconductors ECG903 - 12-VOLT TYPE. 12-Lead T O - 5 Styla ECG908 - 12-V O LT TYPE, 14-Lead Ptastlc Dual In-line TO 116 dim ensional o u tl in e s Dimensions in Ineties and Millimeters

Contextual Info: G SÌC D 1• 7=1^23? 00G2271 4 S-TH O M SO N Q BYX 61-50, R BYX 61-400, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPEBSWITCH FA ST R EC O V ERY R E C T IF IE R DIODES D IO D E S D E R E D R E S S E M E N T R A P ID E S 59C 02271 d T - o S V / '

LM2940

Abstract: LM340 LP2954 LP2954AIM LP2954AIS LP2954AIT LP2954IM LP2954IT T03B tce transformer
Contextual Info: LP2954/LP2954A 5V and Adjustable Micropower Low-Dropout Voltage Regulators General Description Features The LP2954 is a 5V micropower voltage regulator with very low quiescent current 90 µA typical at 1 mA load and very low dropout voltage (typically 60 mV at light loads and

TESLA BP 4651

Abstract: tesla bm 388e TESLA TESLA BM 429 4090 dm hf nu bp 4490 BM 445E BP4650 tesla transistoren TESLA BS 488 ELEKTROMAGNET MIT STABILISIERTEM
Contextual Info: Fertigungssortiment ELEKTRONISCHE MESSGERÄTE ELEKTRONENMIKROSKOPE NMR SPEKTROMETER EINHEITLICHE KLASSIFIKATION: FACHGEBIET391 TESLA BRNO NATIONALUNTERNEHMEN INHALT 39111 - ELEKTRONISCHE MESSGERÄTE FÜR SPANNUNGEN UND ABGELEITETE GROSSEN K L A S S IF IK A T IO N

PAL20L10ACNS

Abstract: OB2520 PAL20L10A PAL20X8A PAL20L10AMJS 20L10 PAL20L10 PAL20X10A PAL20X4A 1ll2
Contextual Info: MIL: A COM’L: A/B/-20/AL PAL20X10A Series AmPAL20L10B/-20/AL Advanced Micro Devices XOR Registered 24-pin TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • XOR gates on registered outputs Register preload for testability ■ Efficient Implementation of counters

FPGA LABVIEW EVAL-CED1Z

Abstract: ad7682 AD7689BCPZ AD7699 AD7949 TBD0805 2540-6002UB ep2C5 ADR435 AD7689
Contextual Info: Preliminary Technical Data Evaluation Board For AD7682/89/99/7949 PulSAR ADCs EVAL-AD76MUXEDZ www.analog.com and should be consulted when utilizing this evaluation board. FEATURES Converter and Evaluation Development EVAL-CED1Z compatibility Versatile analog signal conditioning circuitry

Contextual Info: This document is not intended for viewing onscreen. It is best viewed when printed and read from paper. Depending on your printer, you may need to select “Shrink to Fit” in the print dialog to ensure that the document prints correctly. [AK2358E] ASAH I KASHI

ZB01

Abstract: 0-43710 04371 ptrh-pt relog 0-43760 63950-1 DDR-102 temperaturregler RR501
Contextual Info: DDR-AUTO M ATISIERUNG SG ERÄTE VEBWetron Weida Betrieb des Kombinat Mess- und Regelungstechnik DDR - 6508 W eid a, G e ra e r Straße 36 Telefon: 201 u. 790 • Telex: 587 721 • Telegram m e: W etron W eida A g -N r. 2 7 /1 2 3 /7 5 IV-28-2 648 E X P O R T - I M PORT

S80C154

Abstract: a32b 80CI54
Contextual Info: Tem ic 80C154/83C154 S e m i c o n d u c t o r s CMOS 0 to 36 MHz Single Chip 8-bit Microcontroller Description T E M IC ’s 80C 154 and 83C 154 are high perform ance CM O S single chip |iC . T he 83C 154 retains all the features o f the 80C52 w ith extended RO M capacity 16