70N1 Search Results

70N15

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM Electrically Isolated Backside trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

70N10L

Abstract: SPB70N10L SPP70N10L 160-240V SPP70
Contextual Info: Preliminary Data SPP 70N10L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.016 Ω Continuous drain current ID Enhancement mode • Avalanche rated 100 V 70 A • Logic Level

Contextual Info: ,•— SPP 70N10L Infineon t«c hnoIogi Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f ì DS onì 0.016 n

70n15

Abstract: 52RG
Contextual Info: IXFH 70N15 IXFT 70N15 HiPerFETTM Power MOSFETs VDSS ID25 = 150 V = 70 A Ω = 28 mΩ RDS on trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

70N15

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM Electrically Isolated Backside trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

70N15A

Abstract: 90N20BC 90N8B 70N15BR 70N20A 70N20B 70N30AC 70N30BH 90N20A 90N26BA
Contextual Info: #5. P179-198 02.2.5 4:14 PM ページ 184 CRYSTAL FILTERS 70, 90MHZ SERIES MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 70N15 IXFT 70N15 VDSS ID25 RDS on trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

Contextual Info: 70, 90MHz Series MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth (dB) 3 (kHz) ±7.5 Attenuation Bandwidth Ripple

70N15

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 70N15 IXFT 70N15 VDSS ID25 RDS on trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

70N15

Abstract: TO268
Contextual Info: Advanced Technical Information IXFH 70N15 IXFT 70N15 HiPerFETTM Power MOSFETs VDSS ID25 RDS on trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: Advanced S S F 70N10A Power MOSFET FEATURES BVDSS - 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175oC Operating Temperature ■ Lower Leakage Current : 10 HA Max. @ V DS= 1 0 0 V

LD25

Abstract: L1047
Contextual Info: IZIIXYS Advanced Technical Information V.DSS IXFH 70N15 IXFT 70N15 HiPerFET Power MOSFETs D25 ^DS on = 150 V = 70 A = 28 mQ t rr < 250ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr Maximum Ratings Symbol Test Conditions V Td = 25°C to 150°C

90N8B

Abstract: 70N15A 70N15BR 70N20A 70N20B 70N30AC 70N30BH 90N20A 90N20BC 90N26BA
Contextual Info: 70, 90MHz Series MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth Attenuation Bandwidth Ripple (dB) (kHz) (dB)

Contextual Info: 70, 90MHZ SERIES MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth (dB) 3 (kHz) ±7.5 Attenuation Bandwidth Ripple

70N15A

Abstract: 90N20A 90N20BC 90N8B 70N15BR 70N20A 70N20B 70N30AC 70N30BH 90N26BA
Contextual Info: CRYSTAL FILTERS 70, 90MHZ SERIES MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth Attenuation Bandwidth Ripple

D1804

Abstract: 70n10 data sheet 70N10 NP70N10KUF NP70N10KUF-E1-AZ NP70N10KUF-E2-AZ NEC+70N10
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Bus Bar torque value table for metric bolts

Contextual Info: Telcom Protection Products Section Contents Page Telpower compact fused disconnect switches . . . . .388 Telpower miniature fused disconnect switches . . . . 389 Fused disconnect switches for TPA fuses TP15914 4-Pole disconnect switch . . . . . . . . . . . . . . . .390

igbt welding machine scheme

Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and

STW70N10F4

Abstract: 70n10f4 STP70N10F4 STD70N10F4 STd70N10 70N10
Contextual Info: 70N10F4 70N10F4, 70N10F4 N-channel 100 V, 0.015 Ω, 60 A TO-220, DPAK, TO-247 STripFET DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID 70N10F4 100 V < 0.0195 Ω 60 A 70N10F4 100 V < 0.0195 Ω 65 A 70N10F4 100 V < 0.0195 Ω

FUSE 500mA 125V SMT

Abstract: WAGO 281 FUSE 500mA 250V SMT FUSE 3A 125V SMT GKB. 1 2 3 Dimension Bus Bar torque for metric bolts Ea 1530A tpl-b fuse block lucent comcode ARROW-HART
Contextual Info: TELPOWER Overcurrent Protection Solutions For The Global Telecommunications Market Bussmann ® Worldwide Circuit Protection Solutions The Right Choice For Telecommunications World’s leading supplier of fuses and fusible protection systems is also the manufacturer of the

Contextual Info: 70N10F3 N-channel 100 V, 0.0078 Ω, 16 A STripFET III Power MOSFET in PowerFLAT™ 5x6 package Datasheet — production data Features Order code VDSS RDS on max @VGS=10V 70N10F3 100 V 0.0084 Ω • Improved die-to-footprint ratio ■ Very low thermal resistance

toy helicopter remote control circuit diagram

Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
Contextual Info: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power

TLE 5025

Abstract: automatic brake failure indicator and engine heating alarm radar 77 ghz tda 7718 Bosch radar bosch injectors bosch throttle position bosch fuel pressure sensor bosch alternator bosch hall ignition
Contextual Info: Driving the Future of Automotive Electronics Automotive system solutions [ www.infineon.com/automotive ] 2 2 Contents Challenges and Trends 4 Safety System Solutions 6 Body & Convenience System Solutions 12 Powertrain System Solutions 18 Electrified Powertrain System Solutions

70N10

Abstract: 60N10 JESD97 STD60N10 STP70N10
Contextual Info: STD60N10 70N10 N-channel 100 V - 0.016 Ω - 60 A TO-220 / DPAK low RDS on Power MOSFET Preliminary Data Features • Type VDSS RDS(on)max ID STD60N10 100 V <0.0195 Ω 60 A 70N10 100 V <0.0195 Ω 65 A Exceptional dv/dt capability 3 3 1 ■ Extremely low on-resistance RDS(on)