uras 14
Abstract: 1 MHz xtal
Contextual Info: F i nWfT| CML Semiconductor Products Vi PRODUCT i n f o r m a t i o n t Hi j j | -j FX 306 Audio Filter Array Publication D/306/6 July 1994 Feat uras/AppI icat ions • Cellular Radio Audio Processing ^ • • • to NMT TACS AMPS Specification Low Group Delay Distortion
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d/306/6fx306fx306lg24-pin+4fx306p16-pinuras 141 mhz xtal
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1814GD
Contextual Info: Sales Office and Agents EUROPE - Middle East Northern Africa BE.NE.LUX, UK, Germany Axium Engineering -Peter Raadsen Kennermerstraatweg 81 Alkmaar 1814GD Netherlands +31-653-565-765 P +31-10-265-1351 (F) raa dse n @ m agnetek. it ra a d se n @ a ts.it Germany, Poland, Cech Republic
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smd diode code pj 70
Abstract: uras 10 pj 68 SMD diode smd diode code pj 50
Contextual Info: SIEMENS SPD30N03 SPU30N03 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated f c * '' VPT09Q50 VPT09051 • dv/df rated • 175°C operating temperature Type SPD30N03 Yds 30 V b 30 A ^bS on 0.015 Q. @ VGS VQS = 10V
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spd30n03spu30n03vpt09q50vpt09051+8p-t0252q67040-s4144-a2p-t0251-3-1q67040-s4146-a2smd diode code pj 70uras 10pj 68 smd diodesmd diode code pj 50
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28256
Abstract: 28256 eeprom fci dh 22 ds1235y EEPROM 28256 AO-A14 DS1235AB wf vqc 10 d a6
Contextual Info: DALLAS SEMICONDUCTOR CORP 2blM13D BTE D 0003412 S B DAL DS1235Y/AB DALLAS DS1235Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR -V FEATURES PIN DESCRIPTION • Data retention in the absence of Vc0 A14 1 vc c 27 1 WE\ 26 1 A13 1 A8 24 1 A9 23 1 A ll 22 1 21 1 A10
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2blm13dds1235y/ab28-pinds1235y+8ds1235ab200ns2825628256 eepromfci dh 22eeprom 28256ao-a14wf vqc 10 d a6
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Contextual Info: “ H YU N D A I HY514400A Series SEMICONDUCTOR 1M X 4-bit CMOS DRAM DESCRIPTION The HY514400A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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hy514400a1ac07-20-apr9300014s711nni7/+2hy514400ajhy514400au
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THT bsc 25
Abstract: but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 M70 IBM sm 0038 3408 diode
Contextual Info: MOTOROL A SC 1EE D I b3b?aS4 0004050 1 | X S T RS /R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-.EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 175 WATTS
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but15tht bsc 25bm 1313 diode2sc1020+6nt 407 f transistortransistor 3405 npnsv0200m70 ibmsm 00383408 diode
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uras 14
Abstract: uras 26 V16DJ432BLT V16DJX432BLT Mosel Vitelic dram ttl 7032 Uras3
Contextual Info: MOSEL VITELIC PRELIMINARY V16DJX432BLT/V16DJ432BLT 4M X 32 HIGH PERFORMANCE EDO/FPM MEMORY MODULE Features Description • ■ ■ ■ ■ ■ The V16DJX432BLT/V16DJ432BLT memory Module is organized as 4,194,304 x 32 bits in a 72-lead single-in-line module. The 4M x 32 memory
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v16djx432blt/v16dj432blt72-leadv16djx432bltv16dj432blt+5uras 14uras 26mosel vitelic dramttl 7032uras3
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UPD42S18160G5-70-7-JF
Abstract: UPD42S18160G5707JF uPD42S18160-50 UPD4216160G uPD42S18160G5-50-7JF UPD4216160G5-50 PD42S18160-60 UPD42S18160G5-60-7JF NEC 4216160 UPD4218160G5-80-7JF
Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT / PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D e s c rip tio n The /xPD42S16160, 4216160, 42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The
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upd42s16160upd4216160upd42s18160upd4218160+1516-bit/xpd42s1616042s18160pd42s1616050-pinupd42s18160g5-70-7-jfupd42s18160g5707jfupd42s18160-50upd4216160gupd42s18160g5-50-7jfupd4216160g5-50pd42s18160-60upd42s18160g5-60-7jfnec 4216160upd4218160g5-80-7jf
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IEC 439-1
Abstract: UMC100-FBP CS31-Bus 3AFE64504215 abb acs800 profibus module CI801 3ADW000191 ABB INSUM mcu ACS550 Single and Dual Input Analyzers ph abb AX400
Contextual Info: Data Sheet Devices overview PROFIBUS DP 10/63-0.47-EN Flowmeter Operate Flow Calculators Analyzer Engineer Ethernet Process Controller Control Electrical Actuator PROFIBUS DP/DPV1 DC Drives F A Field Frequency Converter M Remote I/O MNS Motor Management INSUM
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47-enm00596m00605fxe4000+15fxm2000d184s075u02d184b093u10d184s007u02d184b093u05iec 439-1umc100-fbpcs31-bus3afe64504215abb acs800profibus module ci8013adw000191abb insum mcuacs550single and dual input analyzers ph abb ax400
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MEC 1310 nu
Abstract: 4564841G db3 bl
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4564441, 4564841 64M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD4564441,4564841 are high-speed 67,108,864-bit synchronous dynamic random-access m emories, organized as 4,194,304x4x4 and 2,097,152x8x4 wordxbitxbank , respectively.
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upd456444164m-bitpd4564441864-bit+9304x4x4152x8x454-pinu-031s54g5-60b4275b5mec 1310 nu4564841gdb3 bl
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transistor kp 303
Abstract: KP303A Datenblattsammlung VEB mikroelektronik mikroelektronik datenblattsammlung mikroelektronik DDR D818G KP307A Thyristor T6N KP303D
Contextual Info: In n lD ÍN S r ^ e l e k t r o n l k - B a u e l e m e n t e Mir I r dei Dienstgebrauch !ä SS fil I f ! DATENBLATTSAMMUJNG :Jjj§ •■tai elektronische bauelem ente ìm m ttí H : ■ 51 52 mm i l 11 iS Mm L Â | B « : i ms 1 -% 11 ■IP & 1'86 Die vorliegenden Datenblatt®r d i e n m nur zojp Information« Sie
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ddr-10351/86i2/84stransistor kp 303+9kp303adatenblattsammlungveb mikroelektronikmikroelektronik datenblattsammlungmikroelektronik ddrd818gkp307athyristor t6nkp303d
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DP-401
Abstract: HD6803 55AP
Contextual Info: HD6803, HD6803-1 MPU Micro Processing Unit T h e H D 6 8 03 M PU is an 8 -bit m icro processing unit w hich is compatible w ith the H M C S6 80 0 fam ily o f parts. The H D 6803 M PU is object code compatible w ith the H D 6 8 0 0 w ith improved execution times o f key instructions plus several new 16-bit and
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hd6803hd6803-1-hmcs6800hd6800+316-bitdp-40155ap
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