URAS 4 Search Results

uras 14

Abstract: 1 MHz xtal
Contextual Info: F i nWfT| CML Semiconductor Products Vi PRODUCT i n f o r m a t i o n t Hi j j | -j FX 306 Audio Filter Array Publication D/306/6 July 1994 Feat uras/AppI icat ions • Cellular Radio Audio Processing ^ • • • to NMT TACS AMPS Specification Low Group Delay Distortion

1814GD

Contextual Info: Sales Office and Agents EUROPE - Middle East Northern Africa BE.NE.LUX, UK, Germany Axium Engineering -Peter Raadsen Kennermerstraatweg 81 Alkmaar 1814GD Netherlands +31-653-565-765 P +31-10-265-1351 (F) raa dse n @ m agnetek. it ra a d se n @ a ts.it Germany, Poland, Cech Republic

smd diode code pj 70

Abstract: uras 10 pj 68 SMD diode smd diode code pj 50
Contextual Info: SIEMENS SPD30N03 SPU30N03 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated f c * '' VPT09Q50 VPT09051 • dv/df rated • 175°C operating temperature Type SPD30N03 Yds 30 V b 30 A ^bS on 0.015 Q. @ VGS VQS = 10V

28256

Abstract: 28256 eeprom fci dh 22 ds1235y EEPROM 28256 AO-A14 DS1235AB wf vqc 10 d a6
Contextual Info: DALLAS SEMICONDUCTOR CORP 2blM13D BTE D 0003412 S B DAL DS1235Y/AB DALLAS DS1235Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR -V FEATURES PIN DESCRIPTION • Data retention in the absence of Vc0 A14 1 vc c 27 1 WE\ 26 1 A13 1 A8 24 1 A9 23 1 A ll 22 1 21 1 A10

Contextual Info: “ H YU N D A I HY514400A Series SEMICONDUCTOR 1M X 4-bit CMOS DRAM DESCRIPTION The HY514400A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

THT bsc 25

Abstract: but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 M70 IBM sm 0038 3408 diode
Contextual Info: MOTOROL A SC 1EE D I b3b?aS4 0004050 1 | X S T RS /R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-.EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 175 WATTS

UPD42S18160G5-70-7-JF

Abstract: UPD42S18160G5707JF uPD42S18160-50 UPD4216160G uPD42S18160G5-50-7JF UPD4216160G5-50 PD42S18160-60 UPD42S18160G5-60-7JF NEC 4216160 UPD4218160G5-80-7JF
Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT / PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D e s c rip tio n The /xPD42S16160, 4216160, 42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The

IEC 439-1

Abstract: UMC100-FBP CS31-Bus 3AFE64504215 abb acs800 profibus module CI801 3ADW000191 ABB INSUM mcu ACS550 Single and Dual Input Analyzers ph abb AX400
Contextual Info: Data Sheet Devices overview PROFIBUS DP 10/63-0.47-EN Flowmeter Operate Flow Calculators Analyzer Engineer Ethernet Process Controller Control Electrical Actuator PROFIBUS DP/DPV1 DC Drives F A Field Frequency Converter M Remote I/O MNS Motor Management INSUM

MEC 1310 nu

Abstract: 4564841G db3 bl
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4564441, 4564841 64M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD4564441,4564841 are high-speed 67,108,864-bit synchronous dynamic random-access m emories, organized as 4,194,304x4x4 and 2,097,152x8x4 wordxbitxbank , respectively.

transistor kp 303

Abstract: KP303A Datenblattsammlung VEB mikroelektronik mikroelektronik datenblattsammlung mikroelektronik DDR D818G KP307A Thyristor T6N KP303D
Contextual Info: In n lD ÍN S r ^ e l e k t r o n l k - B a u e l e m e n t e Mir I r dei Dienstgebrauch !ä SS fil I f ! DATENBLATTSAMMUJNG :Jjj§ •■tai elektronische bauelem ente ìm m ttí H : ■ 51 52 mm i l 11 iS Mm L Â | B « : i ms 1 -% 11 ■IP & 1'86 Die vorliegenden Datenblatt®r d i e n m nur zojp Information« Sie