UPD443 Search Results
UPD443 Datasheets (116)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| UPD44321181 | NEC | 32M-bit(2M-word x 18-bit) ZEROSB SRAM | Original | 289.01KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPD44321181GF-A75 | NEC | 32M-bit(2M-word x 18-bit) ZEROSB SRAM | Original | 289.01KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| uPD44321181GF-A75 | NEC | 32 MBit ZEROSB SRAM Flow Through Operation | Original | 289.01KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| uPD44321181GF-A75Y | NEC | 32 MBit ZEROSB SRAM Flow Through Operation | Original | 289.01KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPD44321181GF-A75Y | NEC | 32M-bit(2M-word x 18-bit) ZEROSB SRAM | Original | 289.01KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| uPD44321181GF-A85 | NEC | 32 MBit ZEROSB SRAM Flow Through Operation | Original | 289.01KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPD44321181GF-A85 | NEC | 32M-bit(2M-word x 18-bit) ZEROSB SRAM | Original | 289.02KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPD44321181GF-A85Y | NEC | 32M-bit(2M-word x 18-bit) ZEROSB SRAM | Original | 289.02KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPD44321182 | NEC | 32M-bit(2M-word x 16-bit) ZEROSB SRAM | Original | 286.63KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| uPD44321182GF-A50 | NEC | 32 MBit ZEROSB SRAM Pipelined Operation | Original | 286.63KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPD44321182GF-A50 | NEC | 32M-bit(2M-word x 16-bit) ZEROSB SRAM | Original | 286.62KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| uPD44321182GF-A50Y | NEC | 32 MBit ZEROSB SRAM Pipelined Operation | Original | 286.63KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPD44321182GF-A50Y | NEC | 32M-bit(2M-word x 16-bit) ZEROSB SRAM | Original | 286.62KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPD44321182GF-A60 | NEC | 32M-bit(2M-word x 16-bit) ZEROSB SRAM | Original | 286.63KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| uPD44321182GF-A60 | NEC | 32 MBit ZEROSB SRAM Pipelined Operation | Original | 286.63KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| uPD44321182GF-A60Y | NEC | 32 MBit ZEROSB SRAM Pipelined Operation | Original | 286.63KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPD44321182GF-A60Y | NEC | 32M-bit(2M-word x 16-bit) ZEROSB SRAM | Original | 286.63KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPD44321361 | NEC | 32M-bit(1M-word x 36-bit) ZEROSB SRAM | Original | 289.01KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPD44321361GF-A75 | NEC | 32M-bit(2M-word x 18-bit) ZEROSB SRAM | Original | 289.01KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| uPD44321361GF-A75Y | NEC | 32 MBit ZEROSB SRAM Flow Through Operation | Original | 289.01KB | 24 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UPD443 Price and Stock
Renesas Electronics Corporation UPD44324185BF5-E40-FQ1SRAM Chip Sync Dual 1.8V 36M-bit 2M x 18 0.45ns 165-Pin BGA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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UPD44324185BF5-E40-FQ1 | 36,633 | 25 |
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Buy Now | ||||||
Renesas Electronics Corporation UPD44325362BF5-E40-FQ1SRAM Chip Sync Dual 1.8V 36M-bit 1M x 36 0.45ns 165-Pin BGA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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UPD44325362BF5-E40-FQ1 | 27,479 | 25 |
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| UPD44325362BF5-E40-FQ1 | 16,673 | 25 |
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| UPD44325362BF5-E40-FQ1 | 16,656 | 25 |
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| UPD44325362BF5-E40-FQ1 | 88 | 25 |
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Renesas Electronics Corporation UPD44325184BF5-E33-FQ1SRAM Chip Sync Dual 1.8V 36M-bit 2M x 18 0.45ns 165-Pin BGA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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UPD44325184BF5-E33-FQ1 | 23,687 | 25 |
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UPD44325184BF5-E33-FQ1 | 23,687 | 1 |
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Renesas Electronics Corporation UPD44325084BF5-E40-FQ1SRAM Chip Sync Dual 1.8V 36M-bit 4M x 8 0.45ns 165-Pin BGA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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UPD44325084BF5-E40-FQ1 | 17,260 | 25 |
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UPD44325084BF5-E40-FQ1 | 17,260 | 1 |
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Buy Now | ||||||
Renesas Electronics Corporation UPD44324362BF5-E40-FQ1SRAM Chip Sync Single 1.8V 36M-bit 1M x 36 0.45ns 165-Pin BGA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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UPD44324362BF5-E40-FQ1 | 14,456 | 25 |
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Buy Now | ||||||
UPD443 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
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2sc429gtm2sc4582sc458lg2sc503+16 | |
transistor marking A19
Abstract: A6 marking
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pd4432118132m-bit152-word18-bit+5 | |
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Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44324085, 44324095, 44324185, 44324365 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44324085 is a 4,194,304-word by 8-bit, the μPD44324095 is a 4,194,304-word by 9-bit, the μPD44324185 is a |
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pd4432408536m-bit304-wordpd44324095+4 | |
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Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44325084, 44325094, 44325184, 44325364 36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION Description The μPD44325084 is a 4,194,304-word by 8-bit, the μPD44325094 is a 4,194,304-word by 9-bit, the μPD44325184 is a 2,097,152-word by 18-bit and the μPD44325364 is a 1,048,576-word by 36-bit synchronous quad data rate static RAM |
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pd4432508436m-bit304-wordpd44325094+4 | |
PD44325362F5-E50-EQ2-AContextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社 |
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pd44325082-a4325092-a4325182-a4325362-a+6 | |
PD44325092B
Abstract: PD44325362BF5-E35-FQ1-A jtag timing
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pd44325092b-apd44325182b-apd44325362b-a36m-bit+7 | |
2sk2500
Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
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c11178jjcv0if0012c11178jjcv0ifmil-hdbk-217milmil10100+11 | |
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Contextual Info: Datasheet PD44325092B μPD44325182B μPD44325362B 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION R10DS0038EJ0200 Rev.2.00 August 11, 2011 Description The μPD44325092B is a 4,194,304-word by 9-bit, the μPD44325182B is a 2,097,152-word by 18-bit and the μPD44325362B is a 1,048,576-word by 36-bit synchronous quad data rate static RAM fabricated with |
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pd44325092bpd44325182bpd44325362b36m-bit+3 | |
ieee 1149Contextual Info: Datasheet PD44325084B-A μPD44325094B-A μPD44325184B-A μPD44325364B-A 36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION R10DS0039EJ0100 Rev.1.00 Sep 10, 2010 Description The μPD44325084B-A is a 4,194,304-word by 8-bit, the μPD44325094B-A is a 4,194,304-word by 9-bit, the |
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pd44325084b-apd44325094b-apd44325184b-apd44325364b-a+4 | |
2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
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2sk25002sk1543upd16861gsnec 2sk2500+6 | |
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Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44325084B-A, 44325094B-A, 44325184B-A, 44325364B-A 36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION Description The μPD44325084B-A is a 4,194,304-word by 8-bit, the μPD44325094B-A is a 4,194,304-word by 9-bit, the |
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pd44325084b-a44325094b-a44325184b-a44325364b-a+4 | |
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Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44324085-A, 44324095-A, 44324185-A, 44324365-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44324085-A is a 4,194,304-word by 8-bit, the μPD44324095-A is a 4,194,304-word by 9-bit, the μPD44324185A is a 2,097,152-word by 18-bit and the μPD44324365-A is a 1,048,576-word by 36-bit synchronous double data rate |
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pd44324085-a4324095-a4324185-a4324365-a+4 | |
PD44321182GF-AContextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit PD44321182, 44321362 32M ビット ZEROSBTM SRAM パイプライン・オペレーション μPD44321182(2,097,152 ワードx18 ビット), μPD44321362(1,048,576 ワード×36 ビット)は,先進の CMOS |
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pd44321182pd443211822pd443213621ns200+5 | |
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Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit PD44324082-A, 44324092-A, 44324182-A, 44324362-A 36M ビット DDR II SRAM 2 ワード・バースト・オペレーション μPD44324082-A(4,194,304 ワード x 8 ビット),μPD44324092-A(4,194,304 ワード × 9 ビット),μPD44324182-A |
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pd44324082-a4324092-a4324182-a4324362-a+5 | |
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Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44324084, 44324094, 44324184, 44324364 36M-BIT DDR II SRAM 4-WORD BURST OPERATION Description The μPD44324084 is a 4,194,304-word by 8-bit, the μPD44324094 is a 4,194,304-word by 9-bit, the μPD44324184 is a 2,097,152-word by 18-bit and the μPD44324364 is a 1,048,576-word by 36-bit synchronous double data rate static RAM |
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pd4432408436m-bit304-wordpd44324094+4 | |
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Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44324082, 44324092, 44324182, 44324362 36M-BIT DDR II SRAM 2-WORD BURST OPERATION Description The μPD44324082 is a 4,194,304-word by 8-bit, the μPD44324092 is a 4,194,304-word by 9-bit, the μPD44324182 is a 2,097,152-word by 18-bit and the μPD44324362 is a 1,048,576-word by 36-bit synchronous double data rate static RAM |
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pd4432408236m-bit304-wordpd44324092+4 | |
AM 5888
Abstract: SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442
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m16000ejev0sg00am 5888samsung mcp reliabilitysamsung mcp+7 | |
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Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44324092B-A, 44324182B-A, 44324362B-A 36M-BIT DDR II SRAM 2-WORD BURST OPERATION Description The μPD44324092B-A is a 4,194,304-word by 9-bit, the μPD44324182B-A is a 2,097,152-word by 18-bit and the μPD44324362B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced |
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pd44324092b-a44324182b-a44324362b-a36m-bit+5 | |
TAP 105 K 035Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社 |
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pd44324085-a4324095-a4324185-a4324365-a+6 | |
BGA15
Abstract: 72M-BIT samsung ddr quad data rate SRAM idt 150-NM
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m16000jjhv0sg150nm144pinpd48288118+6 | |
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Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社 |
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pd44324082-a4324092-a4324182-a4324362-a+3 | |
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Contextual Info: Datasheet PD44325084B μPD44325094B μPD44325184B μPD44325364B 36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION R10DS0039EJ0200 Rev.2.00 September 12, 2011 Description The μPD44325084B is a 4,194,304-word by 8-bit, the μPD44325094B is a 4,194,304-word by 9-bit, the |
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pd44325084bpd44325094bpd44325184bpd44325364b+2 | |
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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m8e0904e | |
e50yContextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社 |
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pd44324084-a4324094-a4324184-a4324364-a+4 | |