UP 5135 Search Results

GR-S-010

Abstract: smc d-M9bW SMC D-A93 YG02 LZ 173 relay D-M9B ISO pneumatic standards symbols D-M9P CD-MU03 CQUB20-5
Contextual Info: Compact Cylinder Plate type  Size: 20, 25, 32, 40 Width: Reduced by up to 40% compared with SMC CQ2 series    Total length: Reduced by up to 15% Volume: Reduced by up to 18% Mass: Reduced by up to 36% (compared with SMC MU series with 30 stroke)

QSC family

Contextual Info: In te l 87C196KT/87C196KS ADVANCED 16-BIT CHMOS MICROCONTROLLER Automotive —40°C to + 125°C Ambient High Performance CHMOS 16-Bit CPU Up to 32 Kbytes of On*Chip EPROM Up to 1 Kbyte of On-Chip Register RAM Up to 512 Bytes of Additional RAM (Code RAM)

Contextual Info: in te i 87C196KT/87C196KS ADVANCED 16-BIT CHMOS MICROCONTROLLER Automotive —40°C to + 125°C Ambient High Performance CHMOS 16-Bit CPU Up to 32 Kbytes of On-Chip EPROM High Speed Peripheral Transaction Server (PTS) Up to 1 Kbyte of On-Chip Register RAM

up 5135

Abstract: schema UP 5135 UP-5135 panel-meter 5135 up5135 ic7107 LA 7805 IC-7107 panel-meter panel-meter up5135
Contextual Info: UP-5135 Digital panelmeter Inkoppling och byte av mätomräde. ver. 06. Strömforsörjning: 5VDC anslutes antingen till stiften : DC 5V eller till stift nr 2 + och 3 (-) i den nedre stiftlisten. Mätingäng: Spänningen som skall mätas anslutes antingen till de högra stiften

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

verilog code of 8 bit comparator

Abstract: vhdl code for 4 channel dma controller pci master verilog code pci schematics pin vga CRT pinout 80C300 1 wire verilog code 16 byte register VERILOG 8 shift register by using D flip-flop design of dma controller using vhdl
Contextual Info: QAN15 PCI Master / Target Application Note 1 INTRODUCTION This application note describes a fully PCI-compliant Master/Slave interface, implemented in a single QuickLogic QL24x32B FPGA. It utilizes the PCI burst transfer mode for transfers at high speed, up to 67

OPA8828

Contextual Info: OPA8828 Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

po102

Abstract: 700 nm LED bare chip OPA8831 tf 400 OPA883
Contextual Info: OPA8831 Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

OPA8709

Abstract: 11 NM 65 N
Contextual Info: OPA8709 Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

OPA8736H

Contextual Info: OPA8736H Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

Contextual Info: OPA8535HN Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

Contextual Info: OPA8709 Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

Contextual Info: OPA8530HN Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

Contextual Info: OPA8736H Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

po102

Abstract: OPA8935HN
Contextual Info: OPA8935HN A Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs (P Type) Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter

HFBR-1502

Abstract: HFBR-2501 3154-RTV photo interrupter "snap-in" marking 78 connector HFBR-0500 HFBR-3510 HP photo interrupter module HFBR-2502 hfbr-2527 HFBR2501
Contextual Info: SNAP-IN FIBER OPTIC LINKS TRANSMITTERS, RECEIVERS, CABLE AND CONNECTORS HFBR-0500 SERIES Features • GUARANTEED LINK PERFORMANCE OVER TEMPERATURE High Speed Links: dc to 5 MBd Extended Distance Links up to 111 m Low Current Links: 6 mA Peak Supply Current for

Contextual Info: OPA8950HN Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

OPA8731H

Contextual Info: OPA8731H Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

OPA8530HN

Abstract: PO18
Contextual Info: OPA8530HN Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

Contextual Info: OPA8828 Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

Contextual Info: IO Stanford Microdevices SCA-12 Product Description Stanford M icrodevices’ SCA-12 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor M MIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage

GaAlAs LED CHIP

Abstract: OPA8847
Contextual Info: OPA8847 Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

OPA8950HN

Abstract: GaAlAs LED CHIP
Contextual Info: OPA8950HN Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

OPA8745H

Contextual Info: OPA8745H Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol