OPA883 Search Results

OPA883 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: OPA8831 Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol	Original	OPA8831 100mA --------------------130um --------------------10mil	PDF
OPA883 Abstract: OPA8830Q Contextual Info: OPA8830Q Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage	Original	OPA8830Q --------------------100um OPA883 OPA8830Q	PDF
Contextual Info: OPA8830Q Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage	Original	OPA8830Q --------------------100um	PDF
po102 Abstract: 700 nm LED bare chip OPA8831 tf 400 OPA883 Contextual Info: OPA8831 Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol	Original	OPA8831 100mA --------------------130um --------------------10mil po102 700 nm LED bare chip OPA8831 tf 400 OPA883	PDF