OPA8831 Search Results
OPA8831 Datasheets Context Search
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Contextual Info: OPA8831 Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol |
Original |
OPA8831 100mA --------------------130um --------------------10mil | |
po102
Abstract: 700 nm LED bare chip OPA8831 tf 400 OPA883
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Original |
OPA8831 100mA --------------------130um --------------------10mil po102 700 nm LED bare chip OPA8831 tf 400 OPA883 |