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Catalog Datasheet	Type	Document Tags	PDF
po102 Abstract: OPA8935HN Contextual Info: OPA8935HN A Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs (P Type) Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter	Original	OPA8935HN 100mA 400ns, --------------------130um po102	PDF
Contextual Info: OPA8935HN A Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs (P Type) Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter	Original	OPA8935HN 100mA 400ns, --------------------130um	PDF

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po102

Abstract: OPA8935HN
Contextual Info: OPA8935HN A Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs (P Type) Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter

Original

OPA8935HN 100mA 400ns, --------------------130um po102

PDF

Contextual Info: OPA8935HN A Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs (P Type) Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter

Original

OPA8935HN 100mA 400ns, --------------------130um

PDF