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OPA8950HN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: OPA8950HN Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol	Original	OPA8950HN 400ns,	PDF
OPA8950HN Abstract: GaAlAs LED CHIP Contextual Info: OPA8950HN Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol	Original	OPA8950HN 400ns, OPA8950HN GaAlAs LED CHIP	PDF

Catalog Datasheet

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Document Tags

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Contextual Info: OPA8950HN Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

Original

OPA8950HN 400ns,

PDF

OPA8950HN

Abstract: GaAlAs LED CHIP
Contextual Info: OPA8950HN Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

Original

OPA8950HN 400ns, OPA8950HN GaAlAs LED CHIP

PDF