UN11 Search Results

UN1118

Abstract: XN1118
Contextual Info: Composite Transistors XN1118 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1118 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

UNR1121

Abstract: UNR1122 UNR1123 UNR1124 UNR112X UNR112Y
Contextual Info: Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y UN1121/1122/1123/1124/112X/112Y Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 1.0 0.4 1.5 R0.9 R0.9 ● ● ● ● ● ● UNR1121 UNR1122

UN1111

Abstract: UNR1111 XN01111 XN1111
Contextual Info: Composite Transistors XN01111 XN1111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1111(UN1111) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

UN1114

Abstract: UNR1114 XN01114 XN1114
Contextual Info: Composite Transistors XN01114 XN1114 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1114(UN1114) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

UN1112

Abstract: UN1212 UNR1112 UNR1212 XP04312 XP4312
Contextual Info: Composite Transistors XP04312 XP4312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1212(UN1212) + UNR1112(UN1112) • Absolute Maximum Ratings Parameter

UN1118

Abstract: UNR1118 XN01118 XN1118
Contextual Info: Composite Transistors XN01118 XN1118 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1118(UN1118) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

UN1119

Abstract: UN221N UNR1119 UNR221N XP04286
Contextual Info: Composite Transistors XP04286 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR221N(UN221N)+UNR1119(UN1119) • Absolute Maximum Ratings Parameter 0 to 0.1

UN1116

Abstract: UNR1116 XP04116 XP4116
Contextual Info: Composite Transistors XP04116 XP4116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1116(UN1116) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage

UN11015

Abstract: UNH0115
Contextual Info: Circuit Protector Elements UNH0115 UN11015 Circuit Protector Elements Unit: mm For overcurrent protection 2.5±0.1 6.9±0.1 (1.0) (1.0) (0.4) (1.5) • Absolute Maximum Ratings Ta = 25°C 2.4±0.2 1.0±0.1 0.5 max. 2.0±0.2 R 0.7 4.5±0.1 R 0.9 • Sharp cutoff characteristics and low voltage drop

UN111H

Abstract: XN111H
Contextual Info: Composite Transistors XN111H Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN111H x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

UN1113

Abstract: XP4113
Contextual Info: Composite Transistors XP4113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1113 x 2 elements • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage

UN1114

Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●

UN1115

Abstract: XP6115
Contextual Info: Composite Transistors XP6115 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1115 x 2 elements • Absolute Maximum Ratings 1 : Emitter Tr1 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings

UN1113

Abstract: UNR1113 XN01113 XN1113
Contextual Info: Composite Transistors XN01113 XN1113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1113(UN1113) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

UN1111

Abstract: UNR1111 XP04111 XP4111
Contextual Info: Composite Transistors XP04111 XP4111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1111(UN1111) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage

UN1115

Abstract: UNR1115 XP06115 XP6115
Contextual Info: Composite Transistors XP06115 XP6115 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1115(UN1115) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter

UN1112

Abstract: XN1112
Contextual Info: Composite Transistors XN1112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1112 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

UN1117

Abstract: XP1117
Contextual Info: Composite Transistors XP1117 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN1117 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02

UN111F

Abstract: XP111F
Contextual Info: Composite Transistors XP111F Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN111F x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02

UN1112

Abstract: UNR1112 XN01112 XN1112
Contextual Info: Composite Transistors XN01112 XN1112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 2 1 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element 0 to 0.1 UNR1112(UN1112) x 2 elements

high voltage pnp

Abstract: TA-75 UNR1121 UNR1122 UNR1123 UNR1124 UNR112X UNR112Y
Contextual Info: Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y UN1121/1122/1123/1124/112X/112Y Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 6.9±0.1 ● ● ● ● ● (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ

UNH0108

Abstract: UN11008
Contextual Info: Circuit Protector Elements UNH0108 UN11008 Circuit Protector Elements Unit: mm 6.9±0.1 (1.0) • Features (1.0) 3.5±0.1 (1.5) R 0.9 M Di ain sc te on na tin nc ue e/ d • Sharp cutoff characteristics and low voltage drop • Flame retardant package and low heat generation.

SC59A

Abstract: SC-59A RT1N441C RT1P441M RT1N434S RT1P441C RT1P441S UN111E UN111H UN112X
Contextual Info: - 336 - Ta=25t , *Ef][iTc=25‘ C) m z tt ICvDC) « (V) RT1P434S RT1P441C =m =M RT1P441M HS RTÌP441S H S UN111D UN211H ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ st ♦ST ♦ST ♦ST ♦ST ♦ST UN 2 i1L ft; UN211M UN111E U N I I IF