UNR1112 Search Results

UN1112

Abstract: UN1212 UNR1112 UNR1212 XP04312 XP4312
Contextual Info: Composite Transistors XP04312 XP4312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1212(UN1212) + UNR1112(UN1112) • Absolute Maximum Ratings Parameter

UN1112

Abstract: UNR1112 XN01112 XN1112
Contextual Info: Composite Transistors XN01112 XN1112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 2 1 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element 0 to 0.1 UNR1112(UN1112) x 2 elements

UN1112

Abstract: UNR1112 XN01112 XN1112
Contextual Info: Composite Transistors XN01112 XN1112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1112(UN1112) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

UN1112

Abstract: UNR1112 XP06112 XP6112
Contextual Info: Composite Transistors XP06112 XP6112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1112(UN1112) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter

UN1112

Abstract: UNR1112 XP01112 XP1112
Contextual Info: Composite Transistors XP01112 XP1112 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1112(UN1112) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element

UNR1112

Abstract: XP01112
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . XP01112 Silicon PNP epitaxial planar type For digital circuits • Features  Package  Code SMini5-G1  Pin Name 1: Base (Tr1) 2: Emitter 3: Base (Tr2)  Basic Part Number  UNR1112 x 2

UN1112

Abstract: UNR1112 XP04112 XP4112
Contextual Info: Composite Transistors XP04112 XP4112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR1112(UN1112) x 2 elements • Absolute Maximum Ratings 0 to 0.1 ● 0.12 –0.02 ■ Basic Part Number of Element 0.7±0.1

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

UN1112

Abstract: UN1212 UNR1112 UNR1212 XN04312 XN4312
Contextual Info: Composite Transistors XN04312 XN4312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

UN1112

Abstract: UNR1112 XN04112 XN4112
Contextual Info: Composite Transistors XN04112 XN4112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings +0.1 +0.1 0 to 0.05 0.4±0.2 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage

UNR1112

Abstract: UNR1212 UP03312
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 2 3 (0.50) (0.50) 1.00±0.05 Collector-emitter voltage (Base open) Collector current

UN1112

Abstract: UNR1112 XP01112 XP1112
Contextual Info: Composite Transistors XP01112 XP1112 Silicon PNP epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

UNR1112

Abstract: XP01112
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . XP01112 Silicon PNP epitaxial planar type For digital circuits • Features  Two elements incorporated into one package (Transistors with built-in resistor)  Reduction of the mounting area and assembly cost by one half

Contextual Info: Composite Transistors XN0A312 XN1A312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 5 2 2.8+0.2 –0.3 4 5˚ 3 Two elements incorporated into one package.

UNR1112

Abstract: UNR1212 UP03312
Contextual Info: Composite Transistors UP03312 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) 4 • Basic Part Number 1 2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05 5˚ Symbol Rating Unit Collector-base voltage (Emitter open) Parameter VCBO 50 V

UNR1112

Abstract: UNR1212 UP03312G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03312G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) M Di ain sc te on na tin nc ue e/ d For digital circuits • Features ue pl d in an c

UNR1110

Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ

UN1112

Abstract: UNR1112 XN04112 XN4112
Contextual Info: Composite Transistors XN04112 XN4112 Silicon PNP epitaxial planer transistor ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 6

UN1112

Abstract: UNR1112 XP06112 XP6112
Contextual Info: Composite Transistors XP06112 XP6112 Silicon PNP epitaxial planer transistor Unit: mm (0.425) For switching/digital circuits 0.2±0.05 ● 4 1 2 3 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 2 3 (0.50) (0.50) 1.00±0.05 5˚ Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03312G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Features ■ Package • Two elements incorporated into one package

UN1112

Abstract: UN1212 UNR1112 UNR1212 XN04312 XN4312
Contextual Info: Composite Transistors XN04312 XN4312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 3 Parameter 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)