UNR1112 Search Results

UNR1112

Abstract: XP01112
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . XP01112 Silicon PNP epitaxial planar type For digital circuits • Features  Package  Code SMini5-G1  Pin Name 1: Base (Tr1) 2: Emitter 3: Base (Tr2)  Basic Part Number  UNR1112 x 2

UN1112

Abstract: UNR1112 XP04112 XP4112
Contextual Info: Composite Transistors XP04112 XP4112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR1112(UN1112) x 2 elements • Absolute Maximum Ratings 0 to 0.1 ● 0.12 –0.02 ■ Basic Part Number of Element 0.7±0.1

Contextual Info: Composite Transistors XP01112 XP1112 Silicon PNP epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 • Basic Part Number 1 2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05 5˚ Symbol Rating

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . XP01112 Silicon PNP epitaxial planar type For digital circuits • Features  Package  Code SMini5-G1  Pin Name 1: Base (Tr1) 2: Emitter 3: Base (Tr2) M Di ain sc te on na tin nc ue e/

UNR1112

Abstract: UNR1212 UP03312G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03312G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor)

UNR1111

Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits

1117 S Transistor

Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and

UN1112

Abstract: UN1212 UNR1112 UNR1212 XP03312
Contextual Info: Composite Transistors XP03312 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) 2.1±0.1 ● Parameter 0.65 2.0±0.1 (Ta=25˚C) Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50

UN1112

Abstract: UNR1112 XN06112 XN6112
Contextual Info: Composite Transistors XN06112 XN6112 Silicon PNP epitaxial planer transistor 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 1.50+0.25