UNR1113 Search Results

UN1113

Abstract: UNR1113 XN01113 XN1113
Contextual Info: Composite Transistors XN01113 XN1113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1113(UN1113) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

UN1113

Abstract: UNR1113 XP04113 XP4113
Contextual Info: Composite Transistors XP04113 XP4113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1113(UN1113) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage

XP01113

Abstract: XP1113 UN1113 UNR1113
Contextual Info: Composite Transistors XP01113 XP1113 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1113(UN1113) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element

UN1113

Abstract: UNR1113 XP06113 XP6113
Contextual Info: Composite Transistors XP06113 XP6113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR1113(UN1113) x 2 elements • Absolute Maximum Ratings 0 to 0.1 ● 0.12 –0.02 ■ Basic Part Number of Element 0.7±0.1

XN4313

Contextual Info: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 0.50+0.10 –0.05 • UNR1213 (UN1213) + UNR1113 (UN1113) Tr1 1.1+0.2

UNR1113

Abstract: UP01113
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01113 Silicon PNP epitaxial planar type Unit: mm +0.05 (0.30) 4 1 1.00±0.05 1.60±0.05 0 to 0.02 • UNR1113 x 2 • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

Contextual Info: Composite Transistors XP04313 XP04313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 4 1.25±0.10 2.1±0.1 • Features 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01113G Silicon PNP epitaxial planar type For digital circuits • Features ■ Package • Two elements incorporated into one package (Transistors with built-in resistor)

UP01113

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01113 Silicon PNP epitaxial planar type Unit: mm +0.05 (0.30) 4 2 3 (0.50) (0.50) M Di ain sc te on na tin nc ue e/ d 1 • Two elements incorporated into one package (Transistors with built-in resistor)

XN4313

Abstract: UN1113 UN1213 UNR1113 UNR1213 XN04313
Contextual Info: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d For switching/digital circuit 5 6 3 2 • Basic Part Number of Element

UNR1110

Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ

UN1113

Abstract: UNR1113 XN04113 XN4113
Contextual Info: Composite Transistors XN04113 XN4113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings +0.1 +0.1 0 to 0.05 0.4±0.2 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

UNR1113

Abstract: UP01113
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01113 Silicon PNP epitaxial planar type Unit: mm +0.05 (0.30) 4 (0.20) 5˚ 1.20±0.05 For digital circuits 1.60±0.05 5 0.10±0.02 0.20 –0.02 1.00±0.05 1.60±0.05 Display at No.1 lead

Contextual Info: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 5 6 3 2 0.30+0.10 –0.05 ■ Basic Part Number of Element 0.50+0.10

UNR1113

Abstract: UP01113G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01113G Silicon PNP epitaxial planar type For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

UN1113

Abstract: UNR1113 XP04113 XP4113
Contextual Info: Composite Transistors XP04113 XP4113 Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

UN1113

Abstract: UNR1113 XP06113 XP6113
Contextual Info: Composite Transistors XP06113 XP6113 Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

UN1113

Abstract: UNR1113 XN01113 XN1113
Contextual Info: Composite Transistors XN01113 XN1113 Silicon PNP epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

Contextual Info: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 3 6 2 (0.65) 0.30+0.10 –0.05 0.50+0.10

UNR1113

Abstract: UP01113G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01113G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor)

common collector PNP

Abstract: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ