SC59A Search Results

Contextual Info: DB3X407K Silicon epitaxial planar type Unit: mm For high frequency rectification • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 3J

drc2123

Abstract: dra2123
Contextual Info: Doc No. TT4-EA-11722 Revision. 3 Product Standards Transistors with Built-in Resistor DRA2123J0L DRA2123J0L Silicon PNP epitaxial planar type Unit: mm For digital circuits Complementary to DRC2123J 2.9 0.4 0.16 3 • Features 1.5 2.8  Low collector-emitter saturation voltage Vce sat

Contextual Info: DB3X313F Silicon epitaxial planar type For small current rectification Unit: mm • Features  Low forward voltage VF and small reverse current IR  Low terminal capacitance Ct  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

Contextual Info: Doc No. TT4-EA-14185 Revision. 3 Product Standards Zener Diode DZ3X056D0L DZ3X056D0L Silicon epitaxial planar type Unit: mm 2.9 For surge absorption circuit 0.4 0.16 3 • Features 1.5 2.8  Excellent rising characteristics of zner current Iz  Low zener operating resistance Rz

Contextual Info: DB3X315E Silicon epitaxial planar type For high speed switching circuits Unit: mm • Features  Short reverse recovery time trr  Small reverse current IR  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 5D

Contextual Info: Doc No. TT4-EA-12381 Revision. 3 Product Standards Switching Diode DA3X103E0L DA3X103E0L Silicon epitaxial planar type Unit: mm For high speed switching circuits DA3J103E in Mini3 type package 2.9 0.4 0.16 3 • Features 1.5 2.8  Short reverse recovery time trr

Contextual Info: Doc No. TT4-EA-12493 Revision. 2 Product Standards Schottky Barrier Diode DB3X317K0L DB3X317K0L Silicon epitaxial planar type Unit: mm 2.9 For high frequency rectification 0.4 0.16 3 • Features 1.5 2.8  Low forward voltage VF  Forward current Average IF(AV) = 1 A rectification is possible

Contextual Info: DB3X313N Silicon epitaxial planar type For small current rectification Unit: mm • Features  Low forward voltage VF and small reverse current IR  Low terminal capacitance Ct  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

Contextual Info: Doc No. TT4-EA-11717 Revision. 3 Product Standards Transistors with Built-in Resistor DRA2114Y0L DRA2114Y0L Silicon PNP epitaxial planar type Unit: mm For digital circuits Complementary to DRC2114Y 2.9 0.4 0.16 3 • Features 1.5 2.8  Low collector-emitter saturation voltage Vce sat

Contextual Info: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 Previous: ADE-208-571B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK)

Contextual Info: 2SC2620 Silicon NPN Epitaxial Planar REJ03G0704-0200 Previous ADE-208-1071 Rev.2.00 Aug.10.2005 Application VHF amplifier, Local oscillator Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings

27631

Abstract: A 27631 2 wire LT HALL SENSOR Allegro Hall-Effect ICs A3260 A3260ELHLT A3260EUA A3260LLHLT A3260LUA HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E
Contextual Info: A3260 2-Wire Chopper Stabilized Precision Hall Effect Bipolar Switch Discontinued Product These parts are no longer in production The device should not be purchased for new design applications. Samples are no longer available. Date of status change: April 28, 2007

Contextual Info: HSM113WK Silicon Schottky Barrier Diode for Battery Switch HITACHI ADE-208-025B Z Rev. 2 Features • The HSM113WK has two different (VF-IF) chips, and can change the main battery to the backup battery automatically. • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HSM83 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI ADE-208-091D Z Rev 4 Features • High reverse voltage. (VR= 250V) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No.

PDTA114YEF

Abstract: PDTA114YU PDTA114Y PDTA114YE PDTA114YK PDTA114YM PDTA114YS PDTA114YT SC-75 SC-89
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA114Y series PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Product data sheet Supersedes data of 2003 Sep 09 2004 Aug 02 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ

PDTC113ZU

Abstract: PDTA113Z PDTA113ZE PDTA113ZK PDTA113ZM PDTA113ZS PDTA113ZT PDTA113ZU SC-101 SC-43A
Contextual Info: PDTA113Z series PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ Rev. 04 — 2 September 2009 Product data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistors. Table 1. Product overview Type number Package NPN complement

LPC2148 i2c

Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.

BC817

Abstract: PDTB123TK PDTB123TS PDTB123TT PDTD123T PDTD123TK PDTD123TS PDTD123TT SC-43A SC-59A
Contextual Info: PDTD123T series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 02 — 21 July 2005 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors RET family. Table 1: Product overview

TRANSISTOR SMD MARKING CODES

Abstract: BC807 PDTA323TK PDTC323TK SC-59A transistor SMD MARKING CODE MARKING CODE SMD IC
Contextual Info: PDTA323TK PNP 500 mA, 15 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Rev. 01 — 16 June 2005 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors RET in a small SOT346 (SC-59A) SMD plastic package.

14584

Abstract: PDTB123Y marking 43A sot23 BC817 PDTB123YK PDTB123YS PDTB123YT PDTD123YK PDTD123YS PDTD123YT
Contextual Info: PDTD123Y series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 12 April 2005 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors RET family. Table 1: Product overview

HVM187WK

Abstract: SC-59A
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

HRW0202A

Abstract: SC-59A
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

HVM187S

Abstract: SC-59A
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

hitachi S17

Abstract: HRW0202A SC-59A DSA003641
Contextual Info: HRW0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-209E Z Rev. 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.