DRA2123 Search Results

drc2123

Abstract: dra2123
Contextual Info: Doc No. TT4-EA-11722 Revision. 3 Product Standards Transistors with Built-in Resistor DRA2123J0L DRA2123J0L Silicon PNP epitaxial planar type Unit: mm For digital circuits Complementary to DRC2123J 2.9 0.4 0.16 3 • Features 1.5 2.8  Low collector-emitter saturation voltage Vce sat

Contextual Info: Doc No. TT4-EA-11476 Revision. 2 Product Standards Transistors with Built-in Resistor DRA5123Y0L DRA5123Y0L Silicon PNP epitaxial planar type Unit: mm For digital circuits DRA2123Y in SMini3 type package 2.0 0.3 0.13 3 • Features 1.25 2.1  Low collector-emitter saturation voltage Vce sat

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA2123J (Tentative) Silicon PNP epitaxial planar type For digital circuits • Absolute Maximum Ratings Ta = 25°C Parameter  Package  Code Mini3-G3-B  Pin Name 1: Base 2: Emitter 3: Collector

DRA2123J

Abstract: DRC2123J ZJH00371BED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA2123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123J • Features  Package  Packaging  Code Mini3-G3-B  Pin Name 1: Base 2: Emitter 3: Collector

Contextual Info: Doc No. TT4-EA-11723 Revision. 3 Product Standards Transistors with Built-in Resistor DRA2123Y0L DRA2123Y0L Silicon PNP epitaxial planar type Unit: mm 2.9 For digital circuit 0.4 0.16 3 • Features 1.5 2.8  Low collector-emitter saturation voltage Vce sat

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA4123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4123J DRA2123J in NS through hole type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA5123E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC5123E DRA2123E in SMini3 type package • Features  Package  Packaging  Code SMini3-F2-B  Pin Name

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRC2123J Silicon NPN epitaxial planar type For digital circuits Complementary to DRA2123J • Features  Package  Low collector-emitter saturation voltage VCE(sat)  Contributes to miniaturization of sets, reduction of component count.

DRA2123J

Abstract: DRC2123J DRc2123
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA2123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123J • Features  Package  Low collector-emitter saturation voltage VCE(sat)  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: DRA2123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123J Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: L4

Contextual Info: DRA2123Y Silicon PNP epitaxial planar type For digital circuits Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: L3  Packaging

Contextual Info: Doc No. TT4-EA-11741 Revision. 2 Product Standards Transistors with Built-in Resistor DRC2123E0L DRC2123E0L Silicon NPN epitaxial planar type Unit: mm For digital circuits Complementary to DRA2123E 2.9 0.4 0.16 3 • Features 1.5 2.8  Low collector-emitter saturation voltage Vce sat

Contextual Info: Doc No. TT4-EA-11575 Revision. 3 Product Standards Transistors with Built-in Resistor DRA5123J0L DRA5123J0L Silicon PNP epitaxial planar type Unit: mm For digital circuits Complementary to DRC5123J DRA2123J in SMini3 type package 2.0 0.3 0.13 3 • Features

Contextual Info: Doc No. TT4-EA-11742 Revision. 3 Product Standards Transistors with Built-in Resistor DRC2123J0L DRC2123J0L Silicon NPN epitaxial planar type Unit: mm For digital circuits Complementary to DRA2123J 2.9 0.4 0.16 3 • Features 1.5 2.8  Low collector-emitter saturation voltage Vce sat

Contextual Info: DRA2123E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123E Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: L2

DRA2123Y

Abstract: ZJH00372BED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA2123Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123Y • Features  Package  Packaging  Code Mini3-G3-B  Pin Name 1: Base 2: Emitter 3: Collector

DRA2123

Abstract: DRA2123E DRC2123E ZJH00420AED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA2123E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123E • Features  Package  Packaging  Code Mini3-G3-B  Pin Name 1: Base 2: Emitter 3: Collector

DRA2123Y

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA2123Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123Y • Features  Package  Low collector-emitter saturation voltage VCE(sat)  Contributes to miniaturization of sets, reduction of component count.

DRC2123E

Abstract: DRA2123E ZJH00490AED drc2123
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRC2123E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA2123E • Features  Package  Packaging  Code Mini3-G3-B  Pin Name 1: Base 2: Emitter 3: Collector

Contextual Info: Doc No. TT4-EA-11721 Revision. 2 Product Standards Transistors with Built-in Resistor DRA2123E0L DRA2123E0L Silicon PNP epitaxial planar type Unit: mm For digital circuit Complementary to DRC2123E 2.9 0.4 0.16 3 • Features 1.5 2.8  Low collector-emitter saturation voltage Vce sat

drc4123

Abstract: dra2123
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA4123Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4123Y DRA2123Y in NS through hole type package • Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA4123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4123J DRA2123J in NS through hole type package • Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA5123Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC5123Y DRA2123Y in SMini3 type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Doc No. TT4-EA-11574 Revision. 2 Product Standards Transistors with Built-in Resistor DRA5123E0L DRA5123E0L Silicon PNP epitaxial planar type Unit: mm For digital circuits Complementary to DRC5123E DRA2123E in SMini3 type package 2.0 0.3 0.13 3 • Features