UES2606 Search Results

Contextual Info: UES2604 – UES2606 Available High-Reliability screening available HIGH EFFICIENCY RECTIFIERS 30A Center-Tap DESCRIPTION The UES2604 through UES2606 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 kHz. This series combines two high

Contextual Info: UES2604 – UES2606 Available High-Reliability screening available HIGH EFFICIENCY RECTIFIERS 30A Center-Tap DESCRIPTION The UES2604 through UES2606 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 kHz. This series combines two high

UES2606

Abstract: ues260s
Contextual Info: UES2604 UES2605 UES2606 UES2604HR2 UES2605HR2 UES2606HR2 RECTIFIERS High Efficiency, 30A Center-Tap FEA T U R E S • Very Low Forward Voltage 1.15V • Very Fast Recovery Tim es (50nSec) • Low Profile Package • H igh Surge Capability • Low Thermal R esistance

TP Transistors

Contextual Info: U N I T R O D E CORP 9347963 "TE mT 92D UNITRODE CORP 0011044 | 1347^3 11044 D T-a'3-'0'1 UES2604 UES2605 UES2606 UES2604HR UES2605HR UES2606HR RECTIFIERS High Efficiency, 30A Center-Tap DESCRIPTION The UES2604 series is specifically designed for operation In power switching

UES2605HR2

Abstract: UES2604 UES2604HR2 UES2604R UES2605 UES2606 UES2606HR2
Contextual Info: UES26Q4 UES2605 UES2606 UES2604HR2 UES2605HR2 UES2606HR2 RECTIFIERS High Efficiency, 30A Center-Tap DESCRIPTION The UES2604 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz. This series combines two high efficiency

Contextual Info: UES2604 UES2605 UES2606 UES2604HR UES2605HR UES2606HR RECTIFIERS High Efficiency, 30A Center-Tap FEATURES • Very Low Forward Voltage 1.15V • Very Fast Recovery Times (50nSec) • Low Profile Package • High Surge Capability • Low Thermal Resistance

Contextual Info: RECTIFIERS UES2604 UES2605 UES2606 UES2604HR2 UES2605HR2 UES2606HR2 High Efficiency, 30A Center-Tap FEATURES • Very Low Forward Voltage 1.15V • Very Fast Recovery Times (50nSec) • Low Profile Package • High Surge Capability • Low Thermal Resistance

UES2605R

Abstract: ufr3140 1N6715 UF3060 3150R 1N6716 3140PF 1N671 FR314 1s793
Contextual Info: Microsemi Ultra Fast Rectifiers Microsemi I Division I Part Number Package Outline -I Colorado ' DO-4 Colorado DO-21 Colorado DO-4 Colorado TO-3 Watertown TO-3 Watertown TO-3 Watertown TO-3 Colorado TO-3P Colorado DO-4 Colorado DO-21 Colorado : DO-4 Colorado

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

SHA2604

Abstract: SHA2604R SHA2605 SHA2606 SHA2607 SHA2607R UES2604 UES2606
Contextual Info: 5HA2604R AOO*%r SHA2607R t h r o u g h SSDI 30 A M P F A S T RECO'VERY' U L T R A C O M M O N A N O D E C E N T E R T A P R E C T I F 1 E R 200 - 500 V O L T S F E A T U R E S COMBINED PERFORMANCE OF TWO DO-4 DISCRETES PIV TO 500 VOLTS ULTRA FAST RECOVERY. 35ns TYPICAL

UES2606

Abstract: SHA394A SHA394B SHA394C SHA398A SHA398B SHA398C U220H
Contextual Info: 15E D Jfl3bbDll O D D n i t f l l SOLID STATE DEVICES INC T-23-P7 SHA394A thru SHA394C fSeI SsViIö^ lI lI 30 AMP ULTRA FAST CENTERTAP RECTIFIER 100-200 VOLTS 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396

UES2604

Abstract: UES2606 cock SHA2604 SHA2605 SHA2606 SHA2607
Contextual Info: SHA2604 SHA2607 T H R O U G H SSDI 30 A M P U L i K A r A!r> 1 K t L U V L r t î C E N T E R T A P R E C T I F IER 200 - 500 V O L T S F E A T U R E S C A S E S T Y L E JEDEC TO- 3 with .060 PINS M A X I M U M 14849 FIRESTONE BLVD. LA MIRADA. CA 90638 TEL: 213 921-9660

UES1503

Abstract: UES2403 UES1401 UES1402 UES1403 UES1404 UES1501 UES1502 UES1504 UES2402
Contextual Info: je m it r o n ic r “ sem ic o n d u c to r s Semitronics Corp. RECTIFIERS High Efficiency, 8A t o - 22o a c ELECTRICAL SPECIFICATIONS Type UES1401 UES1402 UES1403 UES1404 ' Measured in circuit lF = 0.5A, lR = 1.OA, I REC = 0.25A Maximum Forward Voltage @

2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

transistor U1620R

Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave

A14F diode

Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.