TYP 3055 Search Results

RTM 866 - 480

Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
Contextual Info: Halbleiter­ bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964

3055L

Abstract: f 3055l
Contextual Info: APM3055LU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =75mΩ(typ.) @ VGS=10V RDS(ON)=100mΩ(typ.) @ VGS=4.5V • • • G D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

Contextual Info: VND5T035LAK-E Double channel high-side driver with analog current sense for 24 V automotive applications Datasheet − production data Features Max transient supply voltage VCC 58 V Operating voltage range VCC 8 to 36 V Typ on-state resistance per ch. RON

Contextual Info: Coaxial Voltage Controlled Oscillator Linear Tuning ZX95-3015+ 2570 to 3015 MHz Features • high power, +9 dBm typ. • low phase noise • low pushing • protected by US patent 6,790,049 CASE STYLE: GB956 Applications •r&d • lab • instrumentation

Contextual Info: VND5T035LAK-E Double channel high-side driver with analog current sense for 24 V automotive applications Datasheet − production data Features Max transient supply voltage VCC 58 V Operating voltage range VCC 8 to 36 V Typ on-state resistance per ch. RON

Contextual Info: Coaxial Voltage Controlled Oscillator Linear Tuning ZX95-3015+ 2570 to 3015 MHz Features • High power, +9dBm typ. • Low phase noise • Low pushing • Protected by US patent 6,790,049 CASE STYLE: GB956 Applications • • • • • R&D LAB Instrumentation

Contextual Info: Coaxial Voltage Controlled Oscillator Linear Tuning ZX95-3015+ 2570 to 3015 MHz Features • High Power, +9 dBm typ. • Low Phase Noise • Low Pushing • Protected by US patent 6,790,049 CASE STYLE: GB956 Applications • • • • • R&D LAB Instrumentation

Contextual Info: Coaxial Voltage Controlled Oscillator Linear Tuning ZX95-3015+ 2570 to 3015 MHz Features • High Power, +9 dBm typ. • Low Phase Noise • Low Pushing • Protected by US patent 6,790,049 CASE STYLE: GB956 Applications • • • • • R&D LAB Instrumentation

PL-012

Contextual Info: ROS-3050-519+ ROS-3050-519 Surface Mount Voltage Controlled Oscillator Linear Tuning 2570 to 3015 MHz Features • High Power, +9 dBm typ. • Low Phase Noise • Low Pushing • Aqueous washable CASE STYLE: CK605 PRICE: $15.95 ea. QTY 5-49 + RoHS compliant in accordance

Schalter

Abstract: 3055 TO-3P 2N 3055 2N3055
Contextual Info: Typ f Vcc Pin po ut ßVCBO BV c e O Gehäuse t'rpe _ 2N 5941 2N 5942 2M 5943 f~ rrin IV Hz 30 30 250 28 28 15 50 m A 40PEP 80PEP 7 dB 65 65 40 package 35 35 30 D IA-4L D IA-4L

darlington tip

Abstract: tip 127 texas BD 147 tip 127 texas instruments TIP5530 tip darlington pnp TIP 122 tip 127 darlington tip 42 TIP NPN BD633
Contextual Info: Ptot@ Typ type NPN PNP TIP 35 B TIP 36 B 90 80 25 25 100 1,5 TIP 35 C TIP 36 C 90 100 25 25 100 1,5 TIP 41 TIP 42 65 40 6 15 75 3 TIP 41 A TIP 42 A 65 60 6 15 75 3 TIP 41 B TIP 42 B 65 80 6 15 75 3 TIP 41 C TIP 42 C 65 100 6 15 75 3 TIP 3055 TIP 5530 90 70

bc 945

Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
Contextual Info: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549

k 3369

Abstract: 4001 4002 4007 4011 4013 4017 4030 4052 4060 4066 A 3760 0549 3994 0303 CKR24BX105K MARKING 81 0409 47 005 000
Contextual Info: MIL-PRF-39014/2Pin DIP T MAX. L SEE NOTE 1 SEE NOTE 2 .015 MIN .325 .035 .012 .004 H2 MAX. H1 .400 max. See Note 3 .019 .004 .058 .012 60 TYP. 20 Note 1 = Leads centered within .005" Note 2 = Angle shall be 95, +10, -5 Note 3 = .140 .020 inch 3.56 0.51mm for

0137 0904

Abstract: 3144 0842 A 3120 0504 PM 1027 T 3109 001 CKR22 MIL-PRF-39014 3887 0415
Contextual Info: MIL-PRF-39014/2Pin DIP T MAX. L H1 MAX. SEE NOTE 1 SEE NOTE 2 .015 MIN .325 ±.035 .012 ±.004 .400 max. H2 MAX. See Note 3 .019 ±.004 .058 ±.012 60° TYP. ±20° Note 1 = Leads centered within ±.005" Note 2 = Angle shall be 95°, +10°, -5° Note 3 = .140 ±.020 inch 3.56 ±0.51mm for

Contextual Info: MIL-PRF-39014/2Pin DIP T MAX. L H1 MAX. SEE NOTE 1 SEE NOTE 2 .015 MIN .325 ±.035 .012 ±.004 .400 max. H2 MAX. See Note 3 .019 ±.004 .058 ±.012 60° TYP. ±20° Note 1 = Leads centered within ±.005" Note 2 = Angle shall be 95°, +10°, -5° Note 3 = .140 ±.020 inch 3.56 ±0.51mm for

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

MJ2955 equivalent

Abstract: MPS3640 equivalent 276-2043 MPS918 equivalent 276-2027 2N3053 equivalent MJE34 pnp 2SB22 2N3055 equivalent 2N3819 equivalent
Contextual Info: TRANSISTORS BIPOLAR Direct Commercial Equivalent C atalog N um ber M at. Appli. Polarity Pow er Diss. fT Typ ica l @ 25° c: M Hz Free Air v EBO V v CBO VCEQ V V >C Max hFE Max 5>v c e : V 'C B O at max mA VCB Case style 276-2001 ÏN 1 3 0 4 G s NPN 150m W

bd 3055

Abstract: BD 139 140 BD NPN transistors BDX 241 BD139-6 2N3055 BD139 3055 npn BD 139 N to128
Contextual Info: Typ type f MHz vcc 2N 2N 2N 2N 150 400 400 50 13 28 26 12,5 5713 5773 5774 5848 Pout bvcbo bvceo Gehause package 3,4 0,12 1 3,25 11 1,5 8 20 60 65 65 48 40 35 35 24 TO-128 TO-117 TO-129 145 v CEO mm V 'CD max A mm hpE max 45 60 80 1 1 1 40 40 40 250 160 160

TI1131

Abstract: terminals of 2n3055 TI-487 TI487 2N4005 2N1047 2N389 2N122 TI-1151 TI-1131
Contextual Info: Metal Can Power H igh R eliability Professional Typ es contin u ed Device Type 2N6272 2 N 40 0 3 2N6271 2 N 62 7 3 2N 6 3 2 2 2N 63 2 3 2N 63 2 4 2N 63 2 5 Polarity N PN NPN N PN NPN N PN NPN N PN NPN Outline T O -6 3 T O -6 3 T O -3 T O -6 3 T O -3 T O -6 3

KD502

Abstract: KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46
Contextual Info: N lZ K O F R E K V E N C N l t r a n z i s t o r y n -p -n M e zn i hodnoty Typ h 21E h2/i>* le so p ii U c b max U cb V Uce V 101N U70 102N U70 103N U70 104N U70 10 20 20 20 20 25 25 25 105N U70 106N U70 107N U70 32 32 32 3 0 ’ 3 0 ') 30') 10 10 10 101NU71

Contextual Info: A 1R F R D 10 5 9 .1 8 ± 0 .Z 5 2.00 TYP. [] [] g PRE p p p C jC A T J p Tinned 5 3 .3 4 PC Board Com ponent 8 7 t=1.B D m m Sid e S h o w n 6 5 REVISION RECORD REV 2. CURRENT RATING ECO DR FT DESCRIPTION CHKD : 1 .5 AMP. : 5 0 M IL L I0 H M 5 MAX. 4. INSULATION RESISTANCE; 1 0 0 0 MEßOHMS MIN 9 6 0 0 VDC.

RFD3055RLE

Abstract: 12n06 d0420 RFP3055RLE RFD3055RLESM RFP12N06RLE RFD12N06RLE RFD12N06RLESM 12N06RLE
Contextual Info: R F D 12N 06R LE , R FD 12N 06R LE S M R F P 12N 06R L E , R F D 3055R L E SE CT OR R FD 3055R LE S M , R F P 3055R L E u a o d i q n M r c r o ° HA RR IS S E M I C O N D May 1992 Features N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs

Contextual Info: Lambda’s new X10 Series of Power Modules are ideally suited for Telecommunications and Network applications. X10 Series Power Modules PRODUCT SPECIFICATIONS Lambda Electronics Inc. 3055 Del Sol Blvd. San Diego CA 92154 Tel: 619 575-4400 or Toll Free: (800) 275-5224

3055e mos

Abstract: TK3055E STK3055E 3055E stk3055 3055EN TK3055
Contextual Info: SGS-THOMSON ir a u » K S S TK 3055E N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss R D S o n Id S TK3055E 60 V 0 .1 5 £1 13 A , „ „ , , , AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE