2SA221 Search Results

2SA2215

Abstract: 2sa22 2sa221
Contextual Info: 2SA2215 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2215 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm 2.1±0.1 Low collector-emitter saturation voltage: VCE sat = −0.19 V (max) • High-speed switching: tf = 40 ns (typ.)

2SA2214

Abstract: 2sa22 2SA221
Contextual Info: 2SA2214 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2214 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm 2.1±0.1 • Low collector-emitter saturation voltage: VCE sat = −0.14 V (max) • High-speed switching: tf = 37 ns (typ.)

2SA2214

Contextual Info: 2SA2214 東芝トランジスタ シリコンPNPエピタキシャル形 2SA2214 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm 2.1±0.1 コレクタ･エミッタ間飽和電圧が低い。: VCE sat = −0.14 V (最大)

2SC6139

Abstract: 2SA22 2-7D101A 2SA2219 C6139
Contextual Info: 2SC6139 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6139 ○ Audio Frequency Amplifier Applications Unit: mm • High collector voltage • Small collector output capacitance : Cob = 12pF • High transition frequency : fT = 100MHz typ. • Complementary to 2SA2219

transistor A2210

Abstract: 2SA2210
Contextual Info: 2SA2210 Ordering number : ENA0667B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes

2SA2210-1E

Abstract: transistor A2210
Contextual Info: Ordering number : ENA0667B 2SA2210 Bipolar Transistor http://onsemi.com –50V, –20A, Low VCE sat PNP TO-220F-3SG Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes Low collector-to-emitter saturation voltage

2SA2210

Abstract: equivalent transistor 2sa2210 A0667-1 2SA221 A0667
Contextual Info: 2SA2210 Ordering number : ENA0667 SANYO Semiconductors DATA SHEET 2SA2210 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT processes.

transistor A2210

Abstract: ENA0667B 2sa2210 2SA2210-1E
Contextual Info: 2SA2210 Ordering number : ENA0667B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes

2sa2219

Abstract: A2219 2SC6139 2sa221 2-7D101A 2SA22
Contextual Info: 2SA2219 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2219 ○ Audio Frequency Amplifier Applications • High collector voltage Unit: mm : VCEO = －160 V min • Small collector output capacitance : Cob = 17pF • High transition frequency : fT = 100MHz (typ.)

2SA2219

Abstract: A2219 2-7D101A 2SC6139
Contextual Info: 2SA2219 東芝トランジスタ シリコンPNPエピタキシャル形 2SA2219 ○ オーディオアンプ励振段増幅用 単位: mm • 高耐圧です。 : VCEO = －160V • コレクタ出力容量が小さい。 : Cob = 17pF • トランジション周波数が高い。

2SA2215

Abstract: 2SA221
Contextual Info: 2SA2215 東芝トランジスタ シリコンPNPエピタキシャル形 2SA2215 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm 2.1±0.1 コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = −0.19 V (最大)

Contextual Info: 2SA2214 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2214 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm 2.1±0.1 • Low collector-emitter saturation voltage: VCE sat = −0.14 V (max) • High-speed switching: tf = 37 ns (typ.)

Contextual Info: 2SA2215 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2215 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm 2.1±0.1 Low collector-emitter saturation voltage: VCE sat = −0.19 V (max) • High-speed switching: tf = 40 ns (typ.)

Contextual Info: 2SA2214 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2214 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm 2.1±0.1 • Low collector-emitter saturation voltage: VCE sat = −0.14 V (max) • High-speed switching: tf = 37 ns (typ.)

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

2SC6139

Abstract: C6139 2-7D101A 2SA2219
Contextual Info: 2SC6139 東芝トランジスタ シリコンNPNエピタキシャル形 2SC6139 ○ オーディオアンプ励振段増幅用 単位: mm • 高耐圧です。 : VCEO=160V • コレクタ出力容量が小さい : Cob=12pF 標準 • トランジション周波数が高い。

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

equivalent transistor 2sa2210

Abstract: ENA0725 F5H2101 2SA2210 2SA22 a07251
Contextual Info: F5H2101 Ordering number : ENA0725 SANYO Semiconductors DATA SHEET F5H2101 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • • • • Adoption of MBIT processes.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits