12N06 Search Results

12n06

Contextual Info: ¿ 5 S G S -T H O M S O N ¡m e ra « 7 S T D 12N05 S T D 12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss STD12N05 50 V 12N06 60 V R DS on Id a < 0.15 a 12 A < 0.15 12 A • TYPICAL RDS(on) = 0.1 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N06Z Power MOSFET 12A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 12N06Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low

Contextual Info: □ IX Y S VBO 40 Single Phase Rectifier Bridge •dAV V RRM — 40 A 800-1600 V Prelim inary Data V RSM V 900 1300 1700 Symbol V RRM Standard V 800 1200 1600 VBO 40-08N06 VBO 40-12N06 VBO 40-1 6 NO 6 ■ Test Conditions diode (module) UsM TVJ = 45°C; VR= 0

12N06L

Abstract: 12n06
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N06 Preliminary Power MOSFET 12 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 12N06 is an N-channel mode Power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance with extremely high dense cell design, rugged

2N06L

Abstract: 2N06L 11 12N06L 2N06L 13 mp10 D12N06L 2N06L mos 12N05L
Contextual Info: *57 S G S -T H O M S O N ilLHCTIIMDe TYPE 2Nosl 12N06L s t d i N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR R DS on Id S T D 12N05L V 50 V < 0.15 a 12 A S T D 12N06L 60 V < 0.15 £2 12 A dss • T Y P IC A L R DS(on) = 0.115 £1

Contextual Info: Green Product SDP F 12N06 S a mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) ( Ω) Typ 600V 12A 0.61 @ VGS=10V Rugged and reliable.

12N6LE

Abstract: 12n06rle 630E1
Contextual Info: 12N06RLE, 12N06RLESM, 12N06RLE Data Sheet October 1999 File Number 2407.5 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title FD1 06R , D12 6RL M, P12 6RL bt A, V, 71 m, Packaging Features JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

12N06EZL

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD 12N 06E ZL TMOS E-FET™ High Energy Power FET DPAK for Surface Mount or Insertion Mount TMOS POWER FET 12 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate If This a d va n ce d T M O S p o w e r F E T is d e sig n e d to w ithstan d high

12N6LE

Abstract: 12n06rle AN9322 RFD12N06RLE RFD12N06RLESM RFP12N06RLE TB334 n06r 12N06
Contextual Info: [ /Title RFD1 2N06R LE, RFD12 N06RL ESM, RFP12 N06RL E /Subject (12A, 60V, 0.135 Ohm, NChannel, Logic Level, Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel, Logic Level, Power MOS- 12N06RLE, 12N06RLESM, 12N06RLE Data Sheet

C322 diode

Abstract: 12n05 p12n05 SEFM12H05
Contextual Info: S G S-T H O n S O N 07E D 73C 17 598 712^237 D O lfllD l V N-CHANNEL POWER MÛS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors, ABSOLUTE M AXIM U M RATINGS

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

RFD3055RLE

Abstract: 12n06 d0420 RFP3055RLE RFD3055RLESM RFP12N06RLE RFD12N06RLE RFD12N06RLESM 12N06RLE
Contextual Info: R F D 12N 06R LE , R FD 12N 06R LE S M R F P 12N 06R L E , R F D 3055R L E SE CT OR R FD 3055R LE S M , R F P 3055R L E u a o d i q n M r c r o ° HA RR IS S E M I C O N D May 1992 Features N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs

12N6LE

Abstract: 12n06rle 12N6L AN9321 AN9322 RFD12N06RLE RFD12N06RLESM RFD12N06RLESM9A RFP12N06RLE TB334
Contextual Info: 12N06RLE, 12N06RLESM, 12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN GATE DRAIN FLANGE DRAIN (FLANGE) GATE SOURCE 12N06RLE 12N06RLESM

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

12N6LE

Abstract: 12N06RLE 12N06RLESM
Contextual Info: in te g ri I 12N06RLE, 12N06RLESM, 12N06RLE D a ta S h e e t O c to b e r 1999 2407.5 U ltraS ^ 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging F ile N u m b e r Features JE D EC 7 0 -2 5 1 A A JE D E C TO -252AA SOURCE

gto Gate Drive circuit

Abstract: TIP 133c transistor GTO SCR SCR GTO die N648 GTO MOTOROLA 12n06
Contextual Info: EB108 Prepared by Al Pshaenich Power Products Applications RELATIVE EFFICIEN CIES OF MOTOROLA POWER SEMICONDUCTORS IN A PWM DC MOTOR CONTROLLER INTRODUCTION The prime requisite of a power switch, semiconductor or otherwise, is to transfer the maximum power to the