TV16 Search Results

TV1401

Abstract: TV1602 MicroMetrics TV1402 TV1403 TV1501 TV1502 TV1503 TV1601 TV1603
Contextual Info: HF Hyperabrupt Tuning Varactors Typical Performance 1000 800 Features • High Reliability, Silicon Planar 6000 • Large Capacitance Ratios 400 300 • High Q 200 Packaging • Hermetically Sealed 3000 TV1501 TV1401 100 80 60 40 30 TV1401 400 TV1501 300 TV1601

TVS VISHAY

Contextual Info: New Product TV162L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s

Contextual Info: New Product TV162T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 162 mils x 162 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s

Contextual Info: New Product TV162L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s

SSTV16857

Contextual Info: TV16857 TV16857 14-Bit Registered Buffer Features • Differential Clock Signal • Supports LVTTL switching levels on the RESET pin • Output drivers have controlled edge rates, so no external resistors are required. • 2 KV ESD protection • Latch-up performance exceeds 100 mA: JESD78, Class

Contextual Info: MOTOROLA O rder this docum ent by M TV16N50E/D SEMICONDUCTOR TECHNICAL DATA Advance Information M TV16N50E TM OS E-FET Pow er Field E ffect Transistor D3PAK for S urface Mount TM OS POWER FET 16 AMPERES 500 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: New Product TV162L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s

Contextual Info: New Product TV162T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 162 mils x 162 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s

SSTV16857

Abstract: CY2SSTV16857 CY2SSTV16857ZC CY2SSTV16857ZCT JESD78
Contextual Info: TV16857 TV16857 14-Bit Registered Buffer Features • Differential Clock Signal • Supports LVTTL switching levels on the RESET pin • Output drivers have controlled edge rates, so no external resistors are required. • 2 KV ESD protection • Latch-up performance exceeds 100 mA: JESD78, Class

Contextual Info: New Product TV162T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 162 mils x 162 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s

180 Ohm, 1 Watt Resistor

Abstract: frv12 FRS12 resistors 563 ohm FRS20 FTS25 FTV12 5 watt resistor RADIAL resistor 75 ohm 200 watt FTV200
Contextual Info: Fixed Tùbular, Series FTS & FTV | Pigtail' Wire Leads Radial leads, 8 Watt Typical Tapped Resistor 10 Watt with Base mount Thru-Bolt Standard Fixed Resistors For o th e r a va ila b le c o re sizes a n d re s is ta n c e s , s e e p a g e 12. Resistance Value

ICT-083-S-TG

Abstract: NSH-06DB-S2-TG ADS56004 DSP56002 DSP56004 JG11 SBL-02-S-TG AES EBU CONVERTER NSH-40DB-S2-TG30 socket s1
Contextual Info: CHAPTER 9 DSP56004 APPLICATION DEVELOPMENT MODULE HARDWARE DESCRIPTION 9.1 BOARD ARCHITECTURE The DSP56004 ADM has various options to facilitate evaluation of the different features of the chip. These options are outlined in this chapter with a statement on the default factory jumpers the ADM will be shipped with.

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

RJ45 1X5

Abstract: rj45 socket 8 pin hdr 1X5 12 pin rj45 with integrated LED RJ45 6 RJ45 CONNECTOR socket rj45 pinout NC11 HDR connector 1x5 TV-10
Contextual Info: 5 4 3 2 1 VCC C8 C9 C10 3528 0603 0.1 uFd 0603 0.1 uFd VCC + 10 uFd 16v 1206 0603 D U2 220 R5 OCD_DE D VCC LED Green 56 Be aware when measuring current that this resistor may need to be removed. D1 R1 VCC OCD_DE OCD_DO 14 15 OCDE OCDO OCD_HCLK OCD_CCLK 42

rj45 pinout

Abstract: CY8C21x23 TV11 tv13 NC13 P10 led module RJ45 1X5 NC10 NC11 NC12
Contextual Info: 5 4 3 2 1 VCC C8 C9 C10 3528 0603 0.1 uFd 0603 0.1 uFd VCC + 10 uFd 16v 1206 0603 D U2 220 R5 OCD_DE D VCC LED Green 56 Be aware when measuring current that this resistor may need to be removed. D1 R1 VCC OCD_DE OCD_DO 14 15 OCDE OCDO OCD_HCLK OCD_CCLK 42

Contextual Info: HIGH VOLTAGE SILICON RECTIFIERS SMALL SIZE MOLDED PACKAGE PRV 6,000 TO 20,000 VOLTS FAST RECOVERY AVALANCHE CHARACTERISTICS LOW LEAKAGE MAXIMUM FORWARD EDI TYPE PRV VOLTS VOLTAGE DROP @ 5mA TV6 6,000 20 TV8 8,000 25 TV10 10,000 30 TV12 12,000 38 TV14 14,000

Selector Guide

Abstract: do-218ab DO218AB
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Bare Die Diodes - A Wide Range of Bare Die and Wafer Form Products Small-Signal and Power Diodes Bare Die Products in Several Versions to Accommodate a Wide Variety of Assembly Techniques and Applications TABLE OF CONTENTS

TV1401

Abstract: TV1502 "Tuning Varactors" cs85 TV1402 TV1403 TV1501 TV1503 TV1601 TV1602
Contextual Info: Tuning Varactors Tuning Varactors: TV 1400 - 1700 Series HF Hyperabrupt Tuning Varactors Description The MicroMetrics High Frequency Hyperabrupt Diodes feature ionimplanted epi construction. They are ideal for tuning LC resonant circuits up to 100 MHz with frequency ratios as

TV20

Abstract: TV16
Contextual Info: HIGH VOLTAGE SILICON RECTIFIERS SMALL SIZE MOLDED PACKAGE PRV 6,000 TO 20,000 VOLTS FAST RECOVERY AVALANCHE CHARACTERISTICS LOW LEAKAGE MAXIMUM FORWARD EDI TYPE PRV VOLTS VOLTAGE DROP @ 5mA TV6 6,000 20 TV8 8,000 25 TV10 10,000 30 TV12 12,000 38 TV14 14,000

Contextual Info: THICK FILM CHIP RESISTORS STRUTURE AND DIMENSIONS UNIT : mm L W H h fe RC1005(1/16W) 1.00 ±0.05 0.50±0.05 0.35 ±0.05 0.20 ±0.10 0.25 ±0.10 RC1608(1/16W) 1.60+0,10 0.80±0.15 0.45 ±0.10 0.30 ±0.20 0.35 ±0.10 RC2012(1/10W) 2.00±0.20 1.25+0.15 0.50 ±0.10

Contextual Info: General Purpose Relays PCB Relays SCHRACK Power PCB Relay RTX n 1 pole 16A, 1 form A NO contact (W pre-make contact + AgSnO2) rated fluorescent load n 140µF load, 16A/250V, 30000 operations n Bistable coil n 5kV/10mm coil-contact n Reinforced insulation

TV19

Abstract: DSP56004 MA10 MA11 MA12 MA13 P22V10 EP16K tv28 TV-26
Contextual Info: APPENDIX D ADS HARDWARE PROGRAMMABLE LOGIC D.1 INTRODUCTION This section covers the equations which are programmed into the Programmable Logic PAL devices on all ADS hardware. It also contains the schematic diagrams for each of the boards designed fo the ADS.

TV16

Contextual Info: HIGH VOLTAGE SILICON RECTIFIERS SMALL SIZE MOLDED PACKAGE PRV 6,000 TO 2 0,000 VOLTS FAST RECOVERY AVALANCHE CHARACTERISTICS LOW LEAKAGE NEW PRODUCT MAXIMUM FORWARD EDI TYPE PRV VOLTS VOLTAGE DROP @ 5mA TV6 6,000 20 TV8 8,000 25 TV10 10,000 30 TV12 12,000

GTO philips

Abstract: lg diode 923 Philips gto M1475 IEC134 gto 5A M2739 gate turn-off diode 935 lg lg diode 932
Contextual Info: DEVELOPMENT DATA T his data sheet contains advance information and are subiect to change w ithout notice. N AMER PH ILI P S/ DI S CR ET E TV160DV SERIES GbE D 1^53^31 DDinOS FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE S T -0 S T -/7 Fast gate tu rn -o ff thyristors w ith anti-parallel connected fast soft-recovery diodes in ISOTOP. They