TV162L027S6PV Search Results
TV162L027S6PV Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TVS VISHAYContextual Info: New Product TV162L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s |
Original |
TV162L027S6PV TV162L027S6PV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TVS VISHAY | |
Contextual Info: New Product TV162L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s |
Original |
TV162L027S6PV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product TV162L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s |
Original |
TV162L027S6PV TV162L027S6PV 11-Mar-11 | |
Selector Guide
Abstract: do-218ab DO218AB
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Original |
VMN-SG2163-1312 Selector Guide do-218ab DO218AB |