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TTC3710 Datasheets (3)

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Toshiba

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TTC3710B		Toshiba	Japanese - Transistors	Original	PDF	304.26KB	7
TTC3710B		Toshiba	Transistors	Original	PDF	203.41KB	7
TTC3710B		Toshiba	TTC3710 - TRANSISTOR POWER TRANSISTOR, BIP General Purpose Power	Original	PDF	203.43KB	7

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Toshiba America Electronic Components


Toshiba America Electronic Components TTC3710B,S4X Bipolar Transistors - BJT Bipolar Transistors Silicn NPN Epitaxial
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TTC3710B,S4X		4,796			1 $3.76 10 $2.45 100 $1.71 1000 $1.33 10000 $1.12	Buy Now
TTI	TTC3710B,S4X	Tube			50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components TTC3710B Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	TTC3710B		14,937			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TTC3710 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TTC3710B バイポーラトランジスタシリコンNPNエピタキシャル形 TTC3710B 1. 用途 • 大電流スイッチング用 2. 特長 1 コレクタエミッタ間飽和電圧が低い: VCE(sat) = 0.4 V (最大) (IC = 6 A , IB = 0.3 A) (2)	Original	ttc3710b tta1452b o-220sis	PDF
Contextual Info: TTC3710B Bipolar Transistors Silicon NPN Epitaxial Type TTC3710B 1. Applications • High-Current Switching 2. Features 1 Low collector-emitter saturation voltage: VCE(sat) = 0.4 V (max) (IC = 6 A , IB = 0.3 A) (2) High speed switching: tstg = 1 µs (typ.)	Original	ttc3710b tta1452b o-220sis	PDF
ttc3710 Abstract: TTC3710B Contextual Info: TTC3710B Bipolar Transistors Silicon NPN Epitaxial Type TTC3710B 1. Applications • High-Current Switching 2. Features 1 Low collector-emitter saturation voltage: VCE(sat) = 0.4 V (max) (IC = 6 A , IB = 0.3 A) (2) High speed switching: tstg = 1 µs (typ.)	Original	ttc3710b tta1452b o-220sis ttc3710	PDF
TTA1452B Contextual Info: TTA1452B Bipolar Transistors Silicon PNP Epitaxial Type TTA1452B 1. Applications • High-Current Switching 2. Features 1 Low collector-emitter saturation voltage: VCE(sat) = -0.4 V (max) (IC = -6 A , IB = -0.3 A) (2) High speed switching: tstg = 1 µs (typ.)	Original	tta1452b ttc3710b o-220sis	PDF
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	bce0016f 2sa1941 amp circuit 2sc3303 2sd880 +7to3p package 2sa114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 toshiba bipolar power transistor amplifier design tta1943	PDF
Contextual Info: TTA1452B バイポーラトランジスタシリコンPNPエピタキシャル形 TTA1452B 1. 用途 • 大電流スイッチング用 2. 特長 1 コレクタエミッタ間飽和電圧が低い: VCE(sat) = -0.4 V (最大) (IC = -6 A , IB = -0.3 A)	Original	tta1452b ttc3710b o-220sis	PDF
SMD TRANSISTOR H2A NPN Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B Contextual Info: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	smd transistor h2a npn amplifier circuit using 2sa1943 and 2sc5200 marking smd pnp transistor wf a06 smd transistor +6tta1943 marking smd pnp transistor h2a 2sc5200, 2sa1943, 2sc5198 2sa1941 amp circuit 2sc3303 tta006b	PDF