TSOP28 MEMORY Search Results

M5M5256DFP-70LL*bm

Abstract: HM2V8100TTI5SE R1LV1616HSA-4SI HM216514TTI5SE M5M5V108DVP-70HIBT M5M5V108DVP M5M5256DFP-70LLISM M5M5W816TP-55HI R1LP0408CSP-7LC M5M51008DFP-70HI
Contextual Info: LPSRAM Part Number Guide Density 256K Configuration 32k x8 Voltage Package 3.0-3.6 & 4.5-5.5V SOP28 Speed 70ns Temp Range Catalog / Data Sheet Part Number 0 ~ 70'C. M5M5256DFP-70G 0 ~ 70'C. M5M5256DFP-70XG -40 ~ 85'C M5M5256DFP-70GI TSOP28 4.5-5.5V SOP28 70ns

TAG 9109

Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
Contextual Info: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

TSOP44 Package

Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
Contextual Info: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments

footprint so44

Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
Contextual Info: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad

Fairchild part numbering

Abstract: m27c512 equivalent package TSOP20 M27C512 tsop20 401 PDIP40 AM27X64 TSOP44 MX27C1100 AT27LV520
Contextual Info: OTP and UV EPROM products STMicroelectronics - January 2004 - Printed in Italy - All rights reserved The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies. All other names are the property of their respective owners.

ST m27c512

Abstract: TSOP44 Package SO32 m27c1001 plcc32 ST M27C256B Atmel 642 M27C4002 m27c4001 CROSS REFERENCE PLCC32 package EPROM m27c2001
Contextual Info: OTP and UV EPROM Products www.st.com/eprom Cross Reference Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Introduction Long-term commitment STMicroelectronics will support the EPROM market in the long term with a strong commitment, guaranteeing manufacturing capability and high quality service. Continuous

M68AW031A

Abstract: H28A
Contextual Info: M68AW031A 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 32K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 70ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

M68AW031A

Contextual Info: M68AW031A 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 32K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 70ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

Contextual Info: M68AW031AL 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.3V ■ 32K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 70ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O

15h28

Abstract: M68AF031AM M68AF031AL PDIP28 M68AF031
Contextual Info: M68AF031AL M68AF031AM 256 Kbit 32K x 8 5.0V Asynchronous SRAM FEATURES SUMMARY SUPPLY VOLTAGE: 4.5 to 5.5V Figure 1. Packages 32K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O

M68AW031AL

Abstract: M68AW031AM
Contextual Info: M68AW031AL M68AW031AM 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY SUPPLY VOLTAGE: 2.7 to 3.6V Figure 1. Packages 32K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

AI07201

Abstract: M68AF031AL PDIP28
Contextual Info: M68AF031AL 256 Kbit 32K x 8 5.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 32K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 70ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

atmel 26df161

Abstract: 45DB161D atmel 26df081a 26df161 26df041 26df081a CNV-SOP-NDIP16 cason8 3317B CNV-SOP-NDIP16B
Contextual Info: Programmer Support for DataFlash Devices Programmer Model Needham’s Electronics Hi-Lo Systems BP Microsystems Data I/0 Corp. EMP 30/31/300 ALL-11P2/P3 BP-1400/1600/17x0/2x00/3x00/4x00 Unisite/Autosite/ 2900/3900 ® Device Package S/W Ver. 7.9 PM220SOIC

11PROGRAMMING

Abstract: 4606 IC circuit diagram ad 4606 m27c512 PLCC32 J-STD-020B M27C512 PDIP28 PLCC32 EPROM M27C512
Contextual Info: M27C512 512 Kbit 64K x8 UV EPROM and OTP EPROM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V

m27c

Abstract: M27C25
Contextual Info: M27W256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM Features • 2.7V to 3.6V Supply Voltage in Read Operation ■ Access Time: – 70 ns at VCC = 3.0V to 3.6V – 80 ns at VCC = 2.7V to 3.6V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b

M28C16A

Abstract: M28LV16 PDIP24 PLCC32 SO24
Contextual Info: M28LV16 16K 2K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max

Contextual Info: SGS-THOMSON raD»HlLll Ê'inM l)i!lD(ei M28LV16 LOW VOLTAGE 16K (2K x 8) PARALLEL EEPROM with SOFTWARE DATA PROTECTION • ■ ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: - 64 Bytes Page Write Operation

PLCC32

Abstract: J-STD-020B M27C512 M27W512 PDIP28 11PROGRAMMING
Contextual Info: M27W512 512 Kbit 64K x8 Low Voltage UV EPROM and OTP EPROM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ 2.7 to 3.6V SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0 to 3.6V – 80ns at VCC = 2.7 to 3.6V PIN COMPATIBLE with M27C512

M28C64

Abstract: M28C64-W PDIP28 PLCC32 A10E
Contextual Info: M28C64 64K 8K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DATA BRIEFING FAST ACCESS TIME: – 90ns at 5V – 120ns at 3V SINGLE SUPPLY VOLTAGE: – 5V ± 10% for M28C64 – 2.7V to 3.6V for M28C64-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation

M28C16A

Abstract: M28C17A PDIP28 PLCC32
Contextual Info: M28C16A M28C17A 16K 2K x 8 PARALLEL EEPROM DATA BRIEFING FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation – Byte or Page Write Cycle: 5ms ENHANCED END OF WRITE DETECTION – Ready/Busy Open Drain Output

M28C16A

Abstract: M28C17A PDIP28 PLCC32
Contextual Info: M28C16A M28C17A 16 Kbit 2Kb x8 Parallel EEPROM DATA BRIEFING FAST ACCESS TIME: – 150ns at 5V – 250ns at 3V SINGLE SUPPLY VOLTAGE: – 5V ± 10% for M28C16A and M28C17A – 2.7V to 3.6V for M28C16-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation

M27C512

Abstract: 4606 IC circuit diagram PDIP28 PLCC32
Contextual Info: M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA 28 28 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■