TSOP 4021 Search Results

q1257

Abstract: Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66
Contextual Info: 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 1 Product Information 2003 / 2004 DRAM SPECTRUM www.infineon.com Never stop thinking. 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 2 Introduction September 2003. This edition of the DRAM Spectrum has been developed

512m pc133 SDRAM DIMM

Abstract: TSOP 66 Package TSOP 54 Package DIMM DDR400 PC3200 1 gb ddr2 ram DDR400 infineon HYF33DS512800ATC 16M x 16 DDR TSOP-66 P-TSOPI-48 infineon twinflash
Contextual Info: Product Information 2004 MEMORY SPECTRUM w w w. i n f i n e o n . c o m / m e m o r y w w w. i n f i n e o n . c o m / m e m o r y / f l a s h Never stop thinking. Introduction A P R I L 2 0 0 4 . This edition of Memory Spectrum has been developed to enable you to easily view the entire range of Infineon’s memory products.

ddr2 laptop pin

Abstract: DDR3 Infineon microDIMM 214 DDR3 miniDIMM JEDEC DDR2 DIMM 240 pinout DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR333
Contextual Info: Product Information 2004 MEMORY DRAM Modules Including DDR2 Modules w w w. i n f i n e o n . c o m / m e m o r y Never stop thinking. Introduction One-Stop-Shopping for DRAM Modules J U N E 2 0 0 4 . As a leading memory products supplier, we offer an extensive range of leading-edge DRAM modules.

LEAPER-3

Abstract: 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver
Contextual Info: COMPANY PROFILE 1 Leap Electronic was established in 1980 located in Taipei Taiwan. With great experienced employees, Leap has dedicated on test equipment and provided a whole and perfect environment of development. Additional, the Company has been qualified by major IC manufacturer such as ATMEL, AMD, MICROCHIP, WINBOND,etc.

MICROPROCESSOR Z80

Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

Contextual Info: P I H i@ y T 1F [ ^ 1 ¥ D 0 in te l 2-MBIT 128K x 16, 256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F002BV-T/B, 28F200CV-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at

Contextual Info: PRELIMINARY in te l 8-MBIT 512K X 1 6 ,1024K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B 28F800CE-T/B, 28F008BE-T/B Extended Temperature Operation 40°C to +85°C Intel SmartVoltage Technology — 5V or 12V Program/Erase

Contextual Info: iir tls J W W C T [p ^l¥0i 2-MBIT (128K x 16, 256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F002BV-T/B, 28F200CV-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at

intel e28f

Abstract: 28f400 BYTE PROGRAM
Contextual Info: [p[M3 [G>U T [P^lWOIl in te l 4-MBIT 256K x 16, 512K x 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F004BV-T/B, 28F400CV-T/B Intel Sm artVoltage Technology — 5V or 12V Pro g ram /E rase — 3.3V or 5V Read O peration — 60% Faster Typical Program m ing at

Contextual Info: Novem ber 1992 Edition 1.1 FUJITSU DATA S H F F T MB84257A-70/-70L/-70LL/-10/-10L/-10LL CMOS 256K-BIT LOW POWER SRAM 32,768 WORD x 8-BIT CMOS STATIC RANDOM ACCESS MEMORY WITH DATA RETENTION The Fujitsu M B84257A is a 3 2 ,7 6 8 -w o rd by 8 -b it static random access memory fabricated

84256A

Contextual Info: November 1992 Edition 3.1 FUJITSU DATA SHEET MB84256A-70/-70L/-70LL/-10/-10L/-10LL CMOS 256K-BIT LOW POWER SRAM 32,768 WORD x 8-BIT CMOS STATIC RANDOM ACCESS MEMORY WITH DATA RETENTION The Fujitsu M B84256A is a 3 2 ,76 8 -w o rd by 8 -b it static random access memory fabricated

Contextual Info: I P ^ iU ö Ä Ä f in te i 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Very High-Performance Read — 85 ns Maximum Access Time

Contextual Info: 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY • High Performance Read — 80/120 ns Max Access Time 40 ns Max. Output Enable Time ■ Extended Cycling Capability — 100,000 Block Erase Cycles ■ Automated Byte Write and Block Erase ■ Low Power Consumption

Contextual Info: PRODUCT PREVIEW BYTE-WIDE Smart3 FlashFile™ MEMORY FAMILY 4, 8, AND 16 MBIT 28F004S3, 28F008S3, 28F016S3 Includes Commercial and Extended Temperature Specifications • SmartVoltage Technology — Smart3™ Flash: 2.7V Read-Only or 3.3V Vcc and 3.3V or 12V VPP

philips diode PH 33J

Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without

Contextual Info: in te i ADVANCE INFORMATION 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • Effective Zero Wait-State Performance up to 33 MHz — Synchronous Pipelined Reads ■ SmartVoltage Technology — User-Selectable 3.3V or 5V V cc — User-Selectable 5V or 12V Vpp

intel pa28f400

Abstract: intel 28F400 28F400 29053 intel flash A0513 28f400 interface intel 28f800 A76T intel AP-569
Contextual Info: M f ä ilL D G M Ä Ö S Y in le l 4-MBIT (256K x 16, 512K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B, 28F400CE-T/B, 28F 004B E -T /B Intel Sm artVoltage Technology — 5V or 12V Program /Erase — 2.7V, 3.3V or 5V Read Operation

TE28F160B3B120

Abstract: 29058
Contextual Info: intei PRELIMINARY SMART 3 ADVANCED BOOT BLOCK 4-MBIT, 8-MBIT, 16-MBIT FLASH MEMORY FAMILY 28F400B3, 28F800B3, 28F160B3 • Flexible SmartVoltage Technology — 2.7V-3.6V Program/Erase — 2.7V-3.6V Read Operation — 12V V pp Fast Programming ■ 2.7V or 1.8V I/O Option

Contextual Info: in te l 28F016XS 16-MBIT 1-MBIT x 16, 2-MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective 0-W ait-State Perform ance up to 33 MHz l Backward Compatible with 28F016SA/SV, 28F008SA Command-Set Sm artVoltage Technology — User-Selectable 3.3V or 5V V qc — User-Selectable 5V or 12V Vpp

plc siemens

Abstract: ding dong siemens modules GR 70 4x4Mx16 componentes eletronicos 333
Contextual Info: Chip On Board Innovation in Memory Module Technology Initiative for you. Siemens Semiconductors. CHIP ON BOARD CHIP ON BOARD Innovation in memory module technology. Shorter response cycles, more flexibility and logistical challenges lead to new product concepts

HYE18L256160BF-7

Abstract: intech tsop 4021 Fbga54
Contextual Info: Infineon Specialty DRAMs Mobile-RAM w w w. i n f i n e o n . c o m / m e m o r y / Mo b i l e - R A M Never stop thinking. Mobile-RAM – Extended Battery Lifetime for Handhelds A S O N E O F T H E W O R L D ’ S T O P T H R E E memory companies, Infineon offers a wide portfolio of

PIC16F72 inverter ups

Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
Contextual Info: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read

Contextual Info: in te i 82930A UNIVERSAL SERIAL BUS MICROCONTROLLER • Complete Universal Serial Bus Specification compatibility — Supports Isochronous and Non-isochronous data ■ Power-saving Idle and Powerdown Modes ■ User-selectable Configurations — External Wait State

MO5T

Abstract: 2TOSG-117 272797 8293 wsa0
Contextual Info: [F ^ @ [D y T Ì P ^ i ^ O i W in te i 82930A UNIVERSAL SERIAL BUS MICROCONTROLLER • Complete Universal Serial Bus Specification compatibility — Supports Isochronous and Non-isochronous data I Power-saving Idle and Powerdown Modes I User-selectable Configurations