TSOP 38 Search Results

Contextual Info: 512MB, 1GB, 2GB TSOP Registered DIMM DDR SDRAM DDR SDRAM Registered Module TSOP-II 184pin Registered Module based on 512Mb B-die with 1,700 / 1,200mil Height & 72-bit ECC Revision 1.0 December. 2003 Revison 1.0 December, 2003 512MB, 1GB, 2GB TSOP Registered DIMM

NTGS3455T1

Abstract: NTGS3455T1G
Contextual Info: NTGS3455T1 MOSFET −3.5 Amps, −30 Volts P−Channel TSOP−6 Features • • • • http://onsemi.com Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package Pb−Free Package is Available V(BR)DSS RDS(on) TYP

NTGS4111P

Abstract: NTGS4111PT1 NTGS4111PT1G
Contextual Info: NTGS4111P Power MOSFET −30 V, −4.7 A, Single P−Channel, TSOP−6 Features • • • • • Leading −30 V Trench Process for Low RDS on Low Profile Package Suitable for Portable Applications Surface Mount TSOP−6 Package Saves Board Space Improved Efficiency for Battery Applications

MSC23S4641E-8BS16

Contextual Info: MSC23S4641E-8BS16 98.06.22 Semiconductor MSC23S4641E-8BS16 4,194,304 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): DESCRIPTION The Oki MSC23S4641E-8BS16 is a fully decoded, 4,194,304 x 64bit synchronous dynamic random access memory composed of sixteen 16Mb DRAMs(2Mx8) in TSOP

Contextual Info: 144PIN PC100 Unbuffered SO-DIMM 128MB With 8M X 16 CL2 TS16MSS64V8C2 Placement Description The TS16MSS64V8C2 is a 16M bit x 64 Synchronous Dynamic RAM high-density memory module. The TS16MSS64V8C2 consists of 8 piece of CMOS 2Mx16bitsx4banks Synchronous DRAMs in TSOP-II

MGSF3442VT1

Contextual Info: MGSF3442VT1 Preferred Device Power MOSFET 4 Amps, 20 Volts N–Channel TSOP–6 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are

D1415

Abstract: MH64S72VJG-5
Contextual Info: MITSUBISHI LSIs MH64S72VJG-5,-6 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72VJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.

IC43R16320B

Abstract: DDR333 DDR400 IC43R16320B-6TL
Contextual Info: IS43R16320B IC43R16320B 512 Mb Double Data Rate Synchronous DRAM PRELIMINARY INFORMATION JUNE 2008 Features Specifications • Density: 512M bits • Organization ⎯ 8M words x 16 bits × 4 banks • Package: 66-pin plastic TSOP II ⎯ Lead-free (RoHS compliant)

Contextual Info: NCP1250 Current-Mode PWM Controller for Off-line Power Supplies The NCP1250 is a highly integrated PWM controller capable of delivering a rugged and high performance offline power supply in a tiny TSOP−6 package. With a supply range up to 28 V, the controller

Contextual Info: 184PIN DDR400 Unbuffered DIMM 128MB With 16Mx16 CL3 TS16MLD64V4G3 Description Placement The TS16MLD64V4G3 is a 16M x 64bits Double Data Rate SDRAM high-density for DDR400. The TS16MLD64V4G3 consists of 4pcs CMOS 16Mx16 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil

5525L

Abstract: CY62256 CY62256L CY62256LL
Contextual Info: 56 CY62256 32Kx8 Static RAM Features output enable OE and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9% when deselected. The CY62256 is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, and

Contextual Info: 128MB 168PIN PC100 CL2 SDRAM DIMM With 16M X 8 3.3VOLT TS16MLS64V8D2 Description Placement The TS16MLS64V8D2 is a 16M bit x 64 Synchronous Dynamic RAM high-density for PC-100. The TS16MLS64V8D2 consists of 8pcs CMOS 16Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a

Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3, MT28F640J3, MT28F320J3 TM Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I x8/x16 organization One hundred twenty-eight 128KB erase blocks 128Mb • Sixty-four 128KB erase blocks (64Mb) • Thirty-two 128KB erase blocks (32Mb)

MT28F256J3

Abstract: MT28F256 Micron Q-Flash memory intel strataflash j3
Contextual Info: 256Mb, 128Mb, 64Mb, 32Mb Q-FLASH MEMORY  MT28F256J3‡, MT28F128J3, MT28F640J3, MT28F320J3 Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I Memory Organization • x8/x16 • Two hundred fifty-six 128KB erase blocks 256Mb • One hundred twenty-eight 128KB erase blocks

Contextual Info: 184PIN DDR400 Unbuffered DIMM 512MB With 64Mx8 CL3 TS64MLD72V4J Placement Description The TS64MLD72V4J is a 64M x 72bits Double Data Rate SDRAM high-density for DDR400.The TS64MLD72V4J consists of 9pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages and a 2048

Contextual Info: 128MB 168Pin PC133 CL3 SDRAM DIMM With 16Mx8 3.3VOLT JM317S643A-75
Description Placement
The JM317S643A-75 is a 16M bit x 64 Synchronous Dynamic RAM high density for PC-133. The JM317S643A-75 consists of 8pcs CMOS 16Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and

K4H511638D-UC

Abstract: samsung sdram for 32Mx16 DDR266 DDR333 DDR400 K4H510438D K4H510838D K4H511638D
Contextual Info: K4H510438D K4H510838D K4H511638D DDR SDRAM 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

MT48LC4M32B2F5

Abstract: MT48LC4M32B2B5 MT48LC4M32B2P
Contextual Info: 128Mb: x32 SDRAM SYNCHRONOUS DRAM MT48LC4M32B2 - 1 MEG x 32 x 4 BANKS For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdram Features Figure 1: Pin Assignment Top View 86-Pin TSOP • PC100 functionality • Fully synchronous; all signals registered on positive

Contextual Info: White Electronic Designs W3EG7264S-D3 PRELIMINARY* 512MB – 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184

Contextual Info: White Electronic Designs W3EG6466S-AD4 512MB- 64Mx64 DDR SDRAM UNBUFFERED W/PLL DESCRIPTION FEATURES The W3EG6466S is a 64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of eight 64Mx8 stack DDR SDRAMs in 66 pin TSOP packages mounted on a

DPSD8MX32RY5

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD8MX32RY5 PIN-OUT DIAGRAM DESCRIPTION: This 128 Megabit LP-Stack module, DPSD8MX32RY5, has been designed to allow 32 Output Data lines utilizing two 4 Meg x16 SDRAM TSOP monolithics. Utilizing this LP-Stack™ family

ua 471

Abstract: GS74104TP-10 GS74104TP-10I GS74104TP-12 GS74104TP-12I GS74104TP-15 GS74104TP-15I GS74104TP-8 GS74104TP-8I
Contextual Info: GS74104TP/J SOJ, TSOP Commercial Temp Industrial Temp 1M x 4 4Mb Asynchronous SRAM Features 8, 10, 12, 15 ns 3.3 V VDD Center VDD and VSS SOJ 1M x 4-Pin Configuraton • Fast access time: 8, 10, 12, 15 ns • CMOS low power operation: 150/125/110/90 mA at

MSC23C432A-70BS8

Abstract: MSC23C432A-80BS8
Contextual Info: O K I Semiconductor M SC 23C 432A -xxB S8 4,194,304-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23C432A-xxBS8 is a fully decoded 4,194,304-word x 32-bit CMOS Dynamic Random Access Memory Module composed of eight 4-Mb DRAMs 1M x 4 in TSOP packages

Contextual Info: 200PIN DDR333 Unbuffered SO-DIMM 256MB With 32Mx8 CL2.5 JM434D643A-60 Placement Description The JM434D643A-60 is a 32M x 64bits Double Data Rate SDRAM high-density for DDR333. The JM434D643A-60 consists of 8pcs CMOS 32Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages, and a 2048