TSHA6200 Search Results

TSHA6203

Abstract: TSHA620 TSHA6200 TSHA6201 TSHA6202
Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 875 nm High reliability

Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability

TSHA6202

Abstract: TSHA620 TSHA6200 TSHA6201 TSHA6203 tsha-6203 sr 460 diode
Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 875 nm High reliability

Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 875 nm High reliability

Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability

Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability

Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability

telefunken ha 880

Contextual Info: T em ic TSHA620 S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 05 mm T-P/t Package Description The TSHA620. series are high efficiency infrared emit­ ting diodes in GaAlAs on GaAIAs technology, molded in a clear, untinted plastic package.

CQX48B

Abstract: TLH04400 TLRG542
Contextual Info: V I^ ^ Y Vishay Telefunken Table of Virtual Source Sizes Part Nunber Virtual Source Size mm Part Nunber Virtual Source Size (mm) Part Nunber Virtual Source Size (mm) TLBR5410 3.6 TLHP5800 3.7 TLLY5401 3.7 TLDR4400 2.1 TLHR4200 1.5 TLMA3100 1.8 TLDR4900 2

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

c1g smd

Abstract: bpv10nf TEMD2100
Contextual Info: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -

CQX48B

Abstract: IR Emitters "IR Emitters"
Contextual Info: VISH A Y Vishay Telefunken ▼ Selector Guide IREDs Infrared Emitting Diodes Package Dim. Fig- Characteristics Jype + /- tp Standard IR Emitters GaAs 950 nm in Plastic Package T 40° 25 ! CQY36N am 10 26 L / mW/sr Ip / mA VF/ V CQY37N 12 ° 5 (>2.2) TSUS4400

Contextual Info: TSHA620. Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

Leader 8020 schematics Oscilloscope

Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

diode SR 360

Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
Contextual Info: Eye Safety Vishay Semiconductors Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC EN DIN 60825-1 LEDs are removed from IEC 60825-1 but are still covered by the free air communication safety standard IEC 60825-12. Therefore LEDs for free air communication are still to be

tsha 6203

Abstract: TSHA6202 TSHA520 TSHA620 TSHA6200 TSHA6201 TSHA6203
Contextual Info: TSHA620. GaAlAs Infrared Emitting Diodes in ø5 mm T–1¾ Package Description The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 %

TSHA520

Abstract: TSHA620 TSHA6200 TSHA6201 TSHA6202 TSHA6203
Contextual Info: TSHA620. Vishay Semiconductors ¾ GaAlAs Infrared Emitting Diodes in ø 5 mm T–1 Package Description 94 8389 The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

APPLICATION CIRCUIT OF TSAL4400

Abstract: TSAL6400 TSAL6100 TSHF5200 TSTS7102 CQX48B CQY36N CQY37N tsta7500 TSAL4400
Contextual Info: Vishay Semiconductors Safety Reliability and Safety All semiconductor devices have the potential of failing or degrading in ways that could impair the proper operation of safety systems. Well-known circuit techniques are available to protect against and minimize the effects of such occurrences. Examples of

Contextual Info: TSHA620. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8389 The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

TSHA520

Abstract: TSHA620 TSHA6200 TSHA6201 TSHA6202 TSHA6203
Contextual Info: TSHA620. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8389 The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

tsha 6203

Abstract: TSHA520 TSHA6200 TSHA6201 TSHA6202 TSHA6203
Contextual Info: TELEFUNKEN Semiconductors TSHA 620. GaAlAs Infrared Emitting Diode in ø 5 mm T–1¾ Package Description The TSHA 620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

TDS05160

Abstract: TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond
Contextual Info: V I^ W Y Vishay Telefunken Table of Package Forms Part Number Package Form Part Number Package Form Part Number Package Form TLBR5410 8 TLHR4401 11 TLMH3100 1 TLDR4400 11 TLHR4405 11 TLMH3101 1 TLDR4900 11 TLHR4600 11 TLMK3100 1 TLDR5400 TLDR5800 8 TLHR4601

IEC60601-2-22

Abstract: APPLICATION CIRCUIT OF TSAL4400 IEC608251 voting elements CQX48B CQY36N CQY37N IEC60825-1 LD50 TSAL4400
Contextual Info: VISHAY Vishay Semiconductors Safety Toxicity Although gallium arsenide and gallium aluminium arsenide are both arsenic compounds, under normal use conditions they should be considered relatively benign. Both materials are listed by the 1980 NIOH “Toxicology of Materials” with LD50 values Lethal

BORON

Abstract: BPW34 application BPW77NA BPW41N bpx43-6 BPW43 BPW17 BPW85 BPW34 BPW41N IR DATA
Contextual Info: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future