TSEZ Search Results

SF229

Abstract: toshiba s105
Contextual Info: TOSHIBA TC528257 t a r g e t s il ic o n g a t e c m o s s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION T h e T C 5 2 8 2 5 7 is a 2M b it C M O S m u ltip o rt m e m o ry eq u ip p e d w ith a 2 6 2 ,1 4 4 -w o rd s b y ra n d o m a ccess m e m o ry R A M p o rt a n d a 5 1 2 -w o rd s by

tc528126

Abstract: TC528126B
Contextual Info: PRELIMINARY 131, 0 7 2 W O R D S x 3 B IT S M U L T IP O R T D R A M D E S C R IP T IO N The TC52812GBJ/BZ is a CMOS multiport memory equipped with a 131,072-words by 8-bits dynamic random access memory RAM port and a 256-words by 8-bits static serial access memory (SAM) port. The

Contextual Info: TMS55160 262144 BY 16-BIT MULTIPORT VIDEO RAM SMVS160B-AUGUST1992-REVISED JANUARY 1993 * * * * * DGH PACKAGEt DRAM : 262144 Words x 16 Bits SAM: 256 Words x 16 Bits TOP VIEW Dual Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and

c8051f902

Abstract: C8051F912 smbc 134DET mux88 C8051F32 C8051F912-GM cp1h 188SM C8051F90
Contextual Info: C8051F91x-C8051F90x Single/Dual Battery, 0.9–3.6 V, 16–8 kB, SmaRTClock, 12/10-Bit ADC MCU Ultra-Low Power - 160 uA/MHz in active mode 24.5 MHz clock - 2 us wake-up time (two-cell mode) - 10 nA sleep mode with memory retention; - 50 nA sleep mode with brownout detector

SMJ44C251B

Abstract: 44C251 "Video RAM"
Contextual Info: SMJ44C251B 262144 BY 4-BIT MULTIPORT VIDEO RAM SGMS058A – MARCH 1995 – REVISED JUNE 1995 D D D D D D D D D Military Operating Temperature Range – 55°C to 125°C Performance Ranges: ACCESS TIME ROW ADDRESS MAX ta(R) ’44C251B-10 100 ns ’44C251B-12 120 ns

SGMS056D

Abstract: SMJ55161 "Video RAM" SMJ55161-75
Contextual Info: SMJ55161 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS056D – MAY 1995 – REVISED OCTOBER 1997 D D D D D D D D D D D D D D D Organization: – DRAM: 262 144 by 16 Bits – SAM: 256 by 16 Bits Dual-Port Accessibility – Simultaneous and Asynchronous Access From the DRAM and

SMJ55166

Abstract: SMJ55166-75 SMJ55166-80
Contextual Info: SMJ55166 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS057C – APRIL 1995 – REVISED JUNE 1997 D D D D D D D D D Organization: – DRAM: 262 144 Words x 16 Bits – SAM: 256 Words × 16 Bits Dual-Port Accessibility – Simultaneous and Asynchronous Access From the DRAM and

Contextual Info: C8051F410/1/2/3 2.0 V, 32/16 kB Flash, smaRTClock, 12-bit ADC Analog Peripherals - 12-Bit ADC - ±1 LSB INL; no missing codes Programmable throughput up to 200 ksps Up to 24 external inputs Data dependent windowed interrupt generator Built-in temperature sensor ±3 °C

MSM5416263

Abstract: 256x16* STATIC RAM weland SM5416
Contextual Info: OKI Semiconductor MSM5416263 262,144-W ord x 1 6 -Bit M ultiport D RA M DESCRIPTION The MSM5416263 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

KM428C257

Abstract: XAL W6 MAS 10 RCD sc 4145 CNR 14 V 471 K CA278 CI008 On Screen Display Samsung
Contextual Info: SA M S U N G E L E C T R O N I C S INC b7E D m 7^4142 001L>bb2 17Û SMGK PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port Architecture 2 56 K x 8 bits RAM port 512 x 8 bits SAM port The Sam sung KM 428C 257 is a C M OS 256K x 8 bit Dual

Contextual Info: C8051F97x Low Power Capacitive Sensing MCU with up to 32 kB of Flash Low Power Consumption - 200 µA/MHz in active mode 24.5 MHz clock - 2 µs wakeup time - 55 nA sleep mode with brownout detector - 280 nA sleep mode with LFO - 600 nA sleep mode with external crystal

"Video RAM"

Abstract: KM4216V256 KM4216C256
Contextual Info: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM a rray consists of 512 bit rows of 8192 bits. * Dual port A rchitecture 256K x 16 bits RAM port It operates like a conventional 256K x 16 C M O S DRAM. The RAM port has a write per bit m ask capability.

MSM5416283-60

Abstract: MSM5416283 SAM256
Contextual Info: O KI Semiconductor MSM5416283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

m514262

Abstract: MSM514262 MSM514262-10 MSM514262-70 MSM514262-80 ZIP28-P-400 M5M51426 MSM51426
Contextual Info: O K I Semiconductor MSM5 14262 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is a 1-Mbit CMOS m ultiport DRAM com posed of a 262,144-word by 4-bits dynam ic RAM and a 512-words b y 4-bits SAM. Its RAM and SAM operate independently and asynchronously.

driving point and transfer function

Abstract: TMS55165 TMS55166 "Video RAM" TMS55175 TMS55176 TMS571 X463
Contextual Info: TMS55165, TMS55166, TMS55175, TMS55176 262144 BY 16-BIT MULTIPORT VIDEO RAM SMVS463 – DECEMBER 1995 D D D D D D D D D D D Organization: DRAM: 262 144 Words x 16 Bits SAM: 256 Words × 16 Bits Single 5.0-V Power Supply ±10% Dual-Port Accessibility – Simultaneous and

MSM5416272

Contextual Info: E2L0020-17-Y1 ¡ Semiconductor MSM5416272 ¡ Semiconductor This version: Jan. 1998 MSM5416272 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit

MSM54V16272

Contextual Info: E2L0024-17-Y1 ¡ Semiconductor MSM54V16272 ¡ Semiconductor This version: Jan. 1998 MSM54V16272 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit

MSM5416263

Abstract: srt 0110
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

ns741

Abstract: MSM5416273 l1741
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

MSM548263

Abstract: SOJ40 TFSC
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

MSM5416283

Abstract: FJDS5416283
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC524257P/Z/J-10, TC524257P/Z/J-12 DESCRIPTION The TC524257P/Z/J is a CMOS Multiport memory equipped with a 262,1 4 4 - w o r d x 4 bit dynamic random access memory RAM port and a 5 1 2 - w o r d x 4 bit static serial access memory(SAM) port.

TC524258AZ

Contextual Info: TOSHIBA DIGITAL INTEGRATED CIRCUIT INTEGRATED CIRCUIT TC524258AJ/AZ-10 . TC524258AJ/ A Z-12 TO SHIBA TECHNICAL DATA SILICON GATE CMOS PRELIMINARY 262, 144W 0R D S X48ITS MULTIPORT DRAM DESCRIPTION The TC524253AJ/AZ is a CM OS multiport memory equipped with a 262,144-words by 4-bits

Contextual Info: TOSHIBA TC528257 t a r g e t s il ic o n g a t e c m o s 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION T h e T C 5 2 8 2 5 7 is a 2 M b it C M O S m u ltip o rt m e m o ry e q u ip p e d w ith a 2 6 2 ,1 4 4 -w o rd s b y ra n d o m access m e m o ry R A M p o rt an d a 5 1 2 -w o rd s b y