TRANSITOR Search Results

OF npn transitor

Abstract: kst10
Contextual Info: KST10/11 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSITOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (TA=25°C) Derate above 25°C Collector Dissipation (TA=25°C)

D 823 transistor

Abstract: transistor PH ON 823 m
Contextual Info: Philips Semiconductors • bbSBTBl QDHimD bbfi H A P X Product specification N AUER PHILIPS/D ISCR ETE b?E D NPN 5 GHz wideband transistor DESCRIPTION NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2933 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2933 is silicon NPN epitaxial planar type transitor specifically designed for power amplifiers in 800 ~ 940MHz band. Dimensions in mm FEATURES • High gain. High efficiency:

marking code CB SMD tr2

Abstract: TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c
Contextual Info: BFS466L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR360L3

KSP-06

Abstract: KSP05 KSP06 KST05 KST06 PNP EPITAXIAL SILICON TRANSISTOR 60V
Contextual Info: KSP05/06 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSITOR TO-92 • Collector-Emitter Voltage: VCEO = KSP05: 60V KSP06: 80V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector Base Voltage :KSP05 :KSP06

10mf 16v 0603

Abstract: H8 SOT-23 npn smd 3a 0603 smd CAPACITOR 0603 10UH NCP1450 capacitor 10MF smd cdrh6d28-100nc 10uH inductor 1mF CAPACITOR
Contextual Info: Bill of Materials for the NCP 1450 Bipolar Transitor 2.7V Demonstration Board h 8/28/2003 Designator Quantity IC2 D2 Q2 C5 C4 C6 Cb Rb L2 1 1 1 1 1 1 1 1 1 Description Value PWM Step-up DC-DC controller Schottky Power Rectifier Bipolar Power NPN Low Profile Tantalum Capacitor

Contextual Info: Handheld Datalogging Systems Model OM-550A $ 1495 RS-232 port downloads logged data to a remote computer for processing and storage. A data cache buffer provides transitory storage of logged data. Model OM-550A ߜ Handles Five Voltage or Thermocouple Channels

BD204

Abstract: BD202 BD203 BD203 npn BD201
Contextual Info: PNP BD202 – BD204 NPN BD201 – BD203 SILCON EPITAXIAL-BASE POWER TRANSITORS The BD202 and BD204 are PNP transistors mounted in Jedec TO-220 plastic package. They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W into 4Ω or

M54590P

Abstract: Wr1c
Contextual Info: M IT S U B IS H I BIPOLAR DIGITAL ICs M 54 5 9 0P 8 -U N IT HIGH VO LTAGE 500m A D ARLINGTON TR A N S IS T O R ARRAY W IT H C L A M P DIODE DESCRIPTION PIN CONFIGURATION TOP VIEW The M 5 4 5 9 0 P , 8 -ch an n e l sink driver, consists of 16 NPN transitors c o n n ec te d to from eight high current gain driver

PCT411

Contextual Info: PART NUMBER •P—P TOP VIEW 16 15 14 13 12 6,50 [0 ,2 5 6 ] 13,00° i,26 [0,010] (2 PLS. 13,00° ^ _ 1- 7 ,6 2 LO,300 ] 1 3,00 LO,118] J r~ 1 I I I I 1 IT f f f f i Ü TRANSITOR OUTPUT WITHOUT EXTERNAL BASE CONNECTION. [0,020] PLS ,) [0,100] PLS ,) o SIXTEEN PIN DIP QUAD CHANNEL PHOTOCOUPLER,

Contextual Info: BFS360L6 NPN Silicon RF Transistor* • Low voltage/ Low current operation 4 • For low noise amplifiers 3 5 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 6 1 • Low noise figure: 1.0 dB at 1.8 GHz • Built in 2 transitors TR1, TR2: die as BFR360L3

transitor

Contextual Info: SILICON NPN DARLINGTON POWER TRANSITOR 2N6384 • Hermetic TO3 Metal package. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO VEBO IB IC IB PT PT Collector – Emitter Voltage Collector – Base Voltage

marking K "micro x"

Abstract: MICROWAVE TRANSITOR transistor "micro-x" "marking" 3 GHZ micro-X Package BFY450
Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB = 19 dbm 1.8 GHz Max. available gain Gma = 16 dB at 1.8 GHz • Hermetically sealed microwave package • Transitor frequency fT = 20 GHz

transistor SMD 12E

Abstract: SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE ad SMD 6PIN IC MARKING CODE p BFS36
Contextual Info: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3

T rf transitor

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2933 NPN E P IT A X IA L P L A N A R T Y P E DESCRIPTION OUTLINE DRAWING 2SC2933 is silicon NPN epitaxial planar type transitor specifically designed for power amplifiers in 800 ~ 940MHz band. Dimensions in mm FEATURES • High gain. High efficiency:

capacitor 10MF smd

Abstract: 10mf 16v 0603 capacitor 10mf 6v capacitor SMD footprint 10uH inductor 1mF CAPACITOR capacitor 10mf 16v CAPACITOR SMD sot-23 C6 CDRH6D28-100NC
Contextual Info: Bill of Materials for the NCP 1450 Bipolar Transitor 3.3V Demonstration Board h 8/28/2003 Designator Quantity IC2 D2 Q2 C5 C4 C6 Cb Rb L2 1 1 1 1 1 1 1 1 1 Description Value PWM Step-up DC-DC controller Schottky Power Rectifier Bipolar Power NPN Low Profile Tantalum Capacitor

10mf 16v 0603

Abstract: npn smd 3a capacitor 10MF smd capacitor SMD footprint NCP1450 CAPACITOR TANTALUM panasonic H8 SOT-23 CDRH6D28-100NC 10uH inductor capacitor 10mf 16v
Contextual Info: Bill of Materials for the NCP 1450 Bipolar Transitor 5.0V Demonstration Board h 8/28/2003 Designator Quantity IC2 D2 Q2 C5 C4 C6 Cb Rb L2 1 1 1 1 1 1 1 1 1 Description Value PWM Step-up DC-DC controller Schottky Power Rectifier Bipolar Power NPN Low Profile Tantalum Capacitor

CN100

Abstract: transistor 237 CP100
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR TRANSISTOR CP100 CN100 TO-237 Plastic Package CN100 And CP100 Are Medium Power Transitors Suitable For a Wide Range of Medium Voltage and Current Applications.

BAS316 equivalent

Abstract: Zener Diodes 300v BAS16-03W BAS125 BAS40 equivalent bav20 BAS316 / BAS16-03W 1SS376 bas16 cross reference 1PS301
Contextual Info: Philips Semiconductors Small-signal Transitors and Diodes Cross Reference Diodes PHILIPS GA DIODES CROSS-REFERENCE Schottky diodes COMPETITOR TYPE-NUMBER PHILIPS TYPE-NUMBER COMPETITOR TYPE-NUMBER PHILIPS TYPE-NUMBER BAS125 BAT54 BAS70-06W BAS125-04 BAT54S

CN100

Abstract: CP100
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR TRANSISTOR CP100 CN100 TO-237 Plastic Package CN100 And CP100 Are Medium Power Transitors Suitable For a Wide Range of Medium Voltage and Current Applications.

CMPT3906E

Abstract: transitor CMPT3904 CMPT3904E CMPT3906 X10-4
Contextual Info: Central CMPT3904E NPN CMPT3906E PNP Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSITORS DESCRIPTION: The Central Semiconductor CMPT3904E , CMPT3906E are Enhanced versions of the CMPT3904, CMPT3906 complementary switching

c1ae

Abstract: c1ae application marking code c1ae CMPT3904 CMPT3904E CMPT3906 CMPT3906E X10-4 C1AE SOT23
Contextual Info: Central CMPT3904E NPN CMPT3906E PNP ENHANCED SPECIFICATION COMPLEMENTARY SILICON TRANSITORS SOT-23 CASE MAXIMUM RATINGS: TA=25°C ♦ TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPT3904E , CMPT3906E are Enhanced versions of the CMPT3904, CMPT3906

capacitor 10MF

Abstract: capacitor 10mf 16v inductor 10uH capacitor 10MF smd NCP1450 10mf 16v 0603 H8 SOT-23 npn smd 3a 10uH inductor 1mF CAPACITOR
Contextual Info: Bill of Materials for the NCP 1450 Bipolar Transitor 3.0V Demonstration Board h 8/28/2003 Designator Quantity IC2 D2 Q2 C5 C4 C6 Cb Rb L2 1 1 1 1 1 1 1 1 1 Description Value PWM Step-up DC-DC controller 3.0 V Schottky Power Rectifier Bipolar Power NPN 3A 30V

Contextual Info: DATA SHEET MOS I N T E G R A T E D C I R C U I T /¿PD16307 4 1 b i t D C - P D P ROW D R I V E R I C s DESCRIPTION The UPD16307 is a ROW driver utilized high voltage Bi-CMOS process for DC plasma display panel. It consists of a 41bit bi-directional shift-register and high voltage NPN transitors.