TRANSISTORS REPLACEMENT Search Results

philips power transistor bd139

Abstract: bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 BD136 SMD TRANSISTOR bd435 smd BD131 smd
Contextual Info: AN10405 Increased circuit efficiency, less required board space and saved money by replacing power transistors by low VCEsat BISS transistors Rev. 01.00 — 06 January 2006 Application note Document information Info Content Keywords Bipolar transistors, BISS, low VCEsat, PBSS, power transistors

TIC106M SCR

Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers

TIC106D equivalent

Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers

TRANSISTOR SMD MARKING CODE BS t

Abstract: TRANSISTOR SMD CODE PACKAGE SOT363 SC74 marking 345 BC847BS BC847BV BCM847BS BCM847BV BCM847DS BCM857BS BCM857BV
Contextual Info: BCM847BV; BCM847BS; BCM847DS NPN/NPN matched double transistors Rev. 05 — 27 June 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors are fully isolated internally.

BCM856BS

Abstract: BCM856DS TRANSISTOR SMD MARKING CODE BS t marking code DG SMD Transistor
Contextual Info: BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 — 7 August 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors are fully isolated internally.

2N404

Abstract: MPS404 2n404a a5t404
Contextual Info: TYPES A5T404, A5T404A, A8T404, A8T404A P-N-P SILICON TRANSISTORS _B U L L E T I N N O . O L -S 7 3 1 1 9 7 9 , M A R C H 1973 SILECTt TRANSISTORS* FOR LOW-COST REPLACEMENT OF GERMANIUM 2N404, 2N404A • A5T404, A5T404A Have Standard TO-18 100-mil Pin-Circle Configuration

2N3797

Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide

AN211A

Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide

PEMD4

Abstract: PEMH4 PUMD4 PEMB4
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PEMH4; PUMH4 NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open Product specification Supersedes data of 2003 Oct 02 2004 Apr 14 Philips Semiconductors Product specification NPN/NPN resistor-equipped transistors;

PEMD6

Abstract: PEMB3 PEMH7 PUMB3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PEMB3; PUMB3 PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Product specification Supersedes data of 2001 Sep 19 2003 Oct 15 Philips Semiconductors Product specification PNP/PNP resistor-equipped transistors;

PEMD6

Abstract: PEMB3 PEMH7 PUMB3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PEMH7; PUMH7 NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Product specification Supersedes data of 2001 Oct 22 2003 Oct 02 Philips Semiconductors Product specification NPN/NPN resistor-equipped transistors;

transistor NPN 3D SOT 153

Abstract: BRY39 BCY87 TAG thyristor BFR49 si controlled tetrode switch BRY3 BCY88 BCY89 BR101
Contextual Info: Transistors m icrowave transistors Type No. M L 1 5/2 B M L 1 5/4 B Drawing reference VCBO max. V N-P-N transistor fo r am plifiers up to S—band frequencies AN 20 0.025 N-P-N L —band p ow er transistors intended fo r com m on e m itter operation in class AG o r B

Contextual Info: ESC D • 023SbG5 OOOHÖbS □ « S I E G BUX 82 BUX 83 NPN Silicon Power Transistors ' SIEMENS AKTIENGESELLSCHAF ~ T - 3 3 - i3 B U X 8 2 and B U X 8 3 are triple diffused NPN silicon power transistors in a case similar to TO 3 3 A 2 DIN 41872 . The collector is electrically connected to the case. The transistors

PEMD12

Abstract: PUMD12 PEMB2
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PEMB2; PUMB2 PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2001 Sep 14 2003 Oct 15 Philips Semiconductors Product specification PNP/PNP resistor-equipped transistors;

BFR31

Abstract: marking M2p 21 sot23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product specification Supersedes data of April 1991 1997 Dec 05 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel

NXP SMD ic MARKING CODE

Abstract: SOT23 NXP power dissipation TO-236AB 2PD601BSL sot23 footprint
Contextual Info: 2PD601BRL; 2PD601BSL 50 V, 200 mA NPN general-purpose transistors Rev. 1 — 28 June 2010 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package.

MARKING CODE SMD IC

Abstract: NXP SMD ic MARKING CODE smd code marking ft sot23 2PD601BSL 2pb709brl
Contextual Info: 2PB709BRL; 2PB709BSL 50 V, 200 mA PNP general-purpose transistors Rev. 1 — 28 June 2010 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package.

data sheet for all smd components

Abstract: PMSTA05 PMSTA06 PMSTA55 PMSTA56 MARKING CODE SMD IC
Contextual Info: PMSTA05; PMSTA06 500 mA NPN general-purpose transistors Rev. 3 — 22 July 2010 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a SOT323 SC-70 very small Surface-Mounted Device (SMD) plastic package. Table 1.

Contextual Info: Application Note AN-10B: Driving SiC Junction Transistors SJT : Two-Level Gate Drive Concept Introduction Two-Level SJT Gate Drive Circuit GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJTs) with current ratings ranging from 3 A to 50

PMSTA05

Abstract: PMSTA06 PMSTA55 PMSTA56 marking codes sc70
Contextual Info: PMSTA55; PMSTA56 500 mA PNP general-purpose transistors Rev. 05 — 1 February 2010 Product data sheet 1. Product profile 1.1 General description PNP transistors in a SOT323 SC-70 very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview

MARKING CODE SMD IC

Abstract: smd code marking v8 sot23 MARKING SMD IC CODE smd marking code BC846 NXP BC856
Contextual Info: BC846 series 65 V, 100 mA NPN general-purpose transistors Rev. 8 — 24 April 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number[1]

BC847 smd

Abstract: bc847b nxp V6 SC70 SMD code marking v8 sot323 45V100 BC847 nxp
Contextual Info: BC847 series 45 V, 100 mA NPN general-purpose transistors Rev. 8 — 20 August 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number[1]

HV450

Abstract: HV450WG
Contextual Info: HV450 High-Voltage Ring Generator Ordering Information Operating Voltage Package Options VNN1 SOW-16 -220V HV450WG Features General Description ❏ Integrated high voltage transistors The Supertex HV450 is a PWM high voltage ring generator. The high voltage output P- and N-channel transistors are controlled

PUMH7

Abstract: H3 marking sot363 PEMD6 PEMB3 PEMH7 PUMB3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PEMH7; PUMH7 NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Product data sheet Supersedes data of 2001 Oct 22 2003 Oct 02 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open