TRANSISTORS ND C9 Search Results

MC74HC02D

Abstract: atop mc34152 application notes motor control MC78L05ACD MOTOROLA brushless dc controller 12 Vdc brush motor driver HALL SOT-23-4 motorola transistor cross reference FET small signal transistors motorola Z6 DIODE
Contextual Info: MOTOROLA Order this document by AN1607/D SEMICONDUCTOR APPLICATION NOTE AN1607 ITC122 Low Voltage Micro to Motor Interface By Bill Lucas and Warren Schultz A MOSFET power stage that is designed to run Brush or Brushless DC motors with input signals from an ASB124

KA 2717

Abstract: MDC2125
Contextual Info: b B L T E S M G l G l b S T Q7T M M O T b Order this data sheet by MDC2125/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC2125 SMALLBLOCK Products M o to ro la P referred D evice High Voltage Level Shifter This monolithic, PNP common base, high voltage transistor array is designed to

Si3216

Contextual Info: Si3216 P RO SLIC P R O GRA MM A B LE W IDEBAND SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features   Software-programmable features and parameters: Ringing frequency, amplitude, cadence, and waveshape 2-wire ac impedance and hybrid

PCC2171

Contextual Info: TPA3005D2EVM 6ĆW Stereo ClassĆD Audio Power Amplifier User’s Guide May 2004 HPL − Audio Power Amplifiers SLOU165 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

re2 elna

Abstract: 4315-SMD resistors 7805 5V REGULATOR IC THREE TERMINAL DALE CONNECTORS ASLG40G elna re2 m ND R315 brushless dc motor with regenerative function con PMA-A-R030-1 U104D
Contextual Info: ANALOG ICs 33395 EVALUATION MOTOR BOARD DESIGNER REFERENCE MANUAL MC33395RM Rev. 2 05/2003 ower EMBEDDED MOTION CONTROL Communicate Control Protect DRM33395 Designer Reference Manual 33395 Evaluation Motor Board 33395 Evaluation Motor Board List of Sections

k 3436 transistor

Abstract: Z9 TRANSISTOR SMD J210-4 SMD Transistor z6 transistor 6 pin SMD Z2 PD54003 smd z5 transistor transistor SMD Z2 480M PD54003S
Contextual Info: PD54003 - PD54003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE

DIODE A79 SMD

Contextual Info: TPA3004D2EVM 12ĆW Stereo ClassĆD Audio Power Amplifier With DC Volume Control User’s Guide May 2003 HPL SLOU158A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

SMD Transistor z6

Abstract: Z9 TRANSISTOR SMD transistor 6 pin SMD Z2 smd z5 transistor transistor SMD Z2 480M PD54008 PD54008S XPD54008 XPD54008S
Contextual Info: PD54008 - PD54008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 10 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE

480M

Abstract: PD55015 PD55015S XPD55015 XPD55015S transistor smd z9
Contextual Info: PD55015 - PD55015S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 13.5 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE

DBA40C

Abstract: MG-200 STK400-010 STK400-020 STK401 STK401-070 FB75 STK401-000
Contextual Info: Ordering number: EN 4599A T hick Film Hybrid 1C STK401-070 AF Power Amplifier Split Power Supply (40W+40W min,THD = 0.4%) Overview Package Dimensions The STK401-070 is a thick-film audio power amplifier IC belonging to a series in which all devices are pin compati­

PD57006

Abstract: PD57006S smd transistor z4 j599
Contextual Info: PD57006 PD57006S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

160-1183-1-ND

Abstract: SLUU200 vishay CRCW0603 Liteon 160-1183-1-ND BQ24100RHL ECJ1VB1C104K ECJ-1VB1C104K 15-V bq24103 bq24105
Contextual Info: User’s Guide Using the bq241xx bqSWITCHERE User’s Guide EVM IMPORTANT NOTICE Texas Instruments (TI) provides the enclosed product(s) under the following conditions: This evaluation kit being sold by TI is intended for use for ENGINEERING DEVELOPMENT OR EVALUATION

PD54008L

Abstract: Z9 TRANSISTOR SMD J-STD-020B trimmer cap resistor smd code mil GP 525 smd
Contextual Info: PD54008L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • BROADBAND PERFORMANCES POUT = 8 W WITH 15 dB GAIN @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE

LC5521

Abstract: sanken audio
Contextual Info: LC5521D Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during

Contextual Info: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead

SMD P1

Abstract: PCC150CCT PCB00050 MRF284L NONLINEAR MODEL LDMOS
Contextual Info: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 2, 12/2005 RF Reference Design Library MRF284LR1 MRF284LSR1 US CDMA RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library MRF284 MRF284S US CDMA The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors Freescale Semiconductor, Inc.

Contextual Info: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

AN1294

Abstract: J-STD-020B LET9045S PD57030S capacitor 220uf
Contextual Info: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

Contextual Info: LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE

sanken audio

Contextual Info: LC5521D Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during

3W AUDIO AMPLIFIER CIRCUIT DIAGRAM transistors

Abstract: TPA2008D2 GRM23SY5V106Z016AK 15-V SLVP097 5v 3W stereo AMPLIFIER smd circuit kit wireless headphone
Contextual Info: TPA2008D2 Stereo FilterĆFree ClassĆD Audio Power Amplifier Evaluation Module User’s Guide May 2004 Mixed-Signal Products SLOU116A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications,

B118Q

Abstract: full bridge igbt induction heating generator
Contextual Info: □ I X Y PRELIM INARY INFORMATION* Data Sheet No. 91503A October 1991 S ISOSMART HALF BRIDGE DRIVER CHIPSETS IXBD4410 / IXBD4411 / IXBD4412 / IXBD4413 Features 1200V or G reater Low- to High-Side Isolation 20ns Switching Time with 10OOpF Load; 100ns Switching Time with 10,000pF Load.

VOGT 503 05 001 00

Abstract: Z-Diode ZX 6,2 t24c04 vogt 503 02 010 00 VOGT P7 503 10 010 00 vogt 503 20 010 10 vogt vogt 543 02 010 00 VOGT 503 program eeprom 24c04 6
Contextual Info: Cologne Chip 4QdQCXUUd 752B?280 8B3=!13B 8B3=73;2585>R^]ca^[[Ta fXcW BCP]S?28X]cTaUPRT P]S DRWX_bd_^ac 9P]dPah! Copyright 1994-2001 Cologne Chip AG All Rights Reserved The information presented can not be considered as assured characteristics. Data can change without notice. Parts of the