PD54008L Search Results

PD54008L

Abstract: Z9 TRANSISTOR SMD J-STD-020B trimmer cap resistor smd code mil GP 525 smd
Contextual Info: PD54008L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • BROADBAND PERFORMANCES POUT = 8 W WITH 15 dB GAIN @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE

Contextual Info: STEVAL-TDR015V1 Demonstration board using the PD54008L-E for 2-way UHF radio Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 7.2 V ■ Output power: 8 W ■ Power gain: 12.0 ± 1.0 dB ■ Efficiency: 56 % - 68 % ■

Contextual Info: STEVAL-TDR003V1 2-stage RF power amp: PD84001 + PD54008L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.2 V ■ Output power: 5 W ■ Current < 1.5 A ■ Input power < 10 dBm

Contextual Info: PD54008L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • BROADBAND PERFORMANCES POUT = 8 W WITH 15 dB GAIN @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE

DB-54008L-830

Abstract: 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54008L GRM426X7R104K50 PD54008
Contextual Info: DB-54008L-830 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 800 - 830MHz ■ Supply voltage: 7.2V ■ Output power: 7W ■ Power gain: 7.9 ± 0.3dB ■ Efficiency: 56% - 59%

PD54003L

Contextual Info: AB-54008L-175 2 stages RF power amp: PD84001-E + PD54008L-E + LPF N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Current < 1.5A ■ Input power < 10dBm

STMICROELECTRONICS MSL

Abstract: pd54008l
Contextual Info: PD54008L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W WITH 19 dB gain @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION

PD54008L

Abstract: PD54008L-E DB-54008L-470 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50
Contextual Info: DB-54008L-470 Evaluation board using PD54008L-E for 2-way UHF radio Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 7.2 V ■ Output power: 8 W ■ Power gain: 12.0 ± 1.0 dB ■ Efficiency: 56 % - 68 % ■ Load mismatch: 20:1

PD54008L

Abstract: DB-54008L-830
Contextual Info: DB-54008L-830 schematic 1+ 2- MSub B2 R3 D1 C3 C4 + B1 R2 MSUB FR4 H=60 mil C5 Vcc C1 C2 C12 R1 L1 C9 L3 TL5 C8 RFin TL1 C6 TL2 L2 C10 C11 TL3 TL4 LDMOS PD54008L C13 TL6 C7 C14 TL7 RFout

NEOHM CRG 0603 thick film resistor

Abstract: PD84001 C2f SOT-89 C5F sot smd c2f AB-54008L-175 GRM1885C1H3R3CZ01 PD54008L-E PD84001-E
Contextual Info: AB-54008L-175 2 stages RF power amp: PD84001-E + PD54008L-E + LPF N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Current < 1.5A ■ Input power < 10dBm

NEOHM CRG 0603 thick film resistor

Abstract: GRM1885C1H3R3CZ01 a05t C2f SOT-89 smd c2f PD54008L-E PD84001 STEVAL-TDR00 C6f TRANSISTOR smd transistor code 621
Contextual Info: STEVAL-TDR003V1 2-stage RF power amp: PD84001 + PD54008L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.2 V ■ Output power: 5 W ■ Current < 1.5 A ■ Input power < 10 dBm

TZBX4P300AA110

Abstract: AN2048 PowerFLAT TZBX4R500AA110 PD54008L PD54008L-E TZBX4Z250AA110
Contextual Info: AN2048 Application note PD54008L-E: 8 W - 7 V LDMOS in PowerFLAT packages for wireless meter reading applications Introduction STMicroelectronics has been strongly involved in finding new package solutions for power integrated circuits to obtain a surface mount device SMD . The PowerFLAT package

diode zener 7.2v

Abstract: rf power amplifier circuit by 400-470mhz 3214W-1-103E DB-54008L-470 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54008L H3460
Contextual Info: DB-54008L-470 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.2V ■ Output power: 8W ■ Power gain: 12.2 ± 1.6dB ■ Efficiency: 51% - 76%

Contextual Info: DB-54008L-175 RF POWER Amplifier using 1 x PD54008L N-Channel Enhancement-Mode Lateral MOSFETs General feature • Excellent Thermal Stability ■ Frequency: 135 - 175 MHz ■ Supply Voltage: 7.2V ■ Output Power: 8W ■ Power Gain: 16.2 ± 1.7dB ■ Efficiency: 56% - 57%

j2888

Abstract: 6R8 Zener EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54008L PD54008L-E capacitor 120 PF
Contextual Info: STEVAL-TDR015V1 Demonstration board using the PD54008L-E for 2-way UHF radio Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 7.2 V ■ Output power: 8 W ■ Power gain: 12.0 ± 1.0 dB ■ Efficiency: 56 % - 68 % ■

AB-54008L-175

Abstract: C2f SOT-89 GRM1885C1H3R3CZ01 PD54008L-E PD84001-E PD54003L tl3 tyco 1008CS-220NX
Contextual Info: AB-54008L-175 2 stages RF power amp: PD84001-E + PD54008L-E + LPF N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Current < 1.5A ■ Input power < 10dBm

165nH

Contextual Info: DB-54008L-470 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.2V ■ Output power: 8W ■ Power gain: 12.2 ± 1.6dB ■ Efficiency: 51% - 76%

smd transistor marking z11

Abstract: JESD97 J-STD-020B PD54008L-E
Contextual Info: PD54008L-E RF power transistors The LdmoST Plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 8W with 15 dB gain @ 500MHz ■ New leadless plastic package ■ EDS protection ■ Supplied in tape & reel of 3K units

165nH

Abstract: DB-54008L-830
Contextual Info: DB-54008L-830 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 800 - 830MHz ■ Supply voltage: 7.2V ■ Output power: 7W ■ Power gain: 7.9 ± 0.3dB ■ Efficiency: 56% - 59%

diode zener 7.2v

Abstract: DB-54008L-830 1206 package resistor,1k resistor 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54008L panasonic capacitor fr
Contextual Info: DB-54008L-830 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 800 - 830MHz ■ Supply voltage: 7.2V ■ Output power: 7W ■ Power gain: 7.9 ± 0.3dB ■ Efficiency: 56% - 59%

Contextual Info: PD54008L-E RF power transistors The LdmoST Plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 8W with 15 dB gain @ 500MHz ■ New leadless plastic package ■ EDS protection ■ Supplied in tape & reel of 3K units

PD54008L

Abstract: DB-54008L-406
Contextual Info: DB-54008L-406 schematic 1+ 2- R2 B2 MSub C3 C4 + B1 FR4 H=60 mil C5 Vcc C1 D1 C2 R1 L1 C12 C13 R3 C9 TL6 C8 RFin TL1 C6 TL2 L2 TL3 C10 TL4 TL5 LDMOS PD54008L TL7 C11 L3 TL8 C7 TL9 RFout

Contextual Info: PD54008L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W WITH 19 dB gain @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION

fire alarm abstract

Abstract: transistor 6 pin SMD Z2 transistor SMD Z2 HF VHF power amplifier module PD54008L AN204 Transistor z1 smd 13J20 VHF transmitter circuit 10m PowerFLAT
Contextual Info: AN2048 APPLICATION NOTE PD54008L: 8W-7V LDMOS in PowerFLAT packages for wireless meter reading applications 1. ABSTRACT In the last years STMicroelectronics has been strongly involved in finding new package solutions for power integrated circuits to get a totally Surface Mount Device SMD .