A05T Search Results

Contextual Info: i 4 N IG H T VERM A55TE KANTEN SIND NIGHT M A05TA B LIC H A ND ERU NG EN NI5CHEN BEHALTEN LD D IE DEM UN5 i 2 Z E I CHNUNG TECH- F0RT5CHRITT WIR 3 G E S C HU T Z T CJCOPVRIGHT D I ENEN, AMP VOR ALLE DEUTSCHLAND RECHTE DURCH RE V . 1988 GMBH V0RBEHALTEN DATUM

TOKO rlc variable INDUCTANCE

Abstract: MPS901 J340 751E MC13156 MC13156DW MC13156FB MMBR5179 SFE10 HP8640B
Contextual Info: Order this document by MC13156/D MC13156 Wideband FM IF System The MC13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. Excellent high frequency performance is achieved at low cost using Motorola’s MOSAIC 1.5 bipolar

Contextual Info: 4 3 2 V1.1 15.10 3.80 12.90 SYM A A DISCRETION ••C U S T O M E R REVISIONS APPROVED SYM A A DATE D R A W IN G 1 DISCRETION DATE APPROVED F O R R E F E R A N C E O N L Y , S A M P L E S A P P R O V A L A R E R E Q U IR E D !! 13.50 PCB EDGE <J Q.7 0 . -B -

A05T

Abstract: AN211A AN215A AN721 MRF1550FT1 MRF1550T1 VK200
Contextual Info: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices

MRF1550

Abstract: FM LDMOS freescale transistor MRF1550N UHF AN721 MRF1550FNT1 AN215A S11 zener diode MRF1550N MRF1550NT1 VK200
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 13, 6/2008 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from

167D

Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
Contextual Info: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100

TRAM1812

Abstract: GSM Intercom From circuit B10T 10nK 63 TRAM4015 TRAM1008 TRAM0603 TRAM0805 TRAM132
Contextual Info: TOKEN TRAM Air Core Coils Spring Inductors SMD Air Core Coils Flat Top Spring Inductors SMD Air Core Coils - TRAM Series Token offers The Smallest Air Coil Inductors for Only 1.8 x 2.0 x 2.0 mm (TRAM) Preview The latest range of air core surface mount coils from Token is fully compliant with RoHS legislation and

marking WB4

Abstract: NIPPON CHEMI nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

adc 0304

Contextual Info: Freescale Semiconductor Technical Data MRF1550T1 Rev. 8, 3/2005 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 MRF1550T1 MRF1550FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices

MC1648

Abstract: LTYW motorola varactor MC12148D 32236
Contextual Info: M M O TO R O LA — — M C 12148 Low Power Voltage Controlled O scillator The MC12148 requires an external parallel tank circuit consisting of the inductor (L) and capacitor (C). A varactor diode may be incorporated into the tank circuit to provide a voltage variable input for the oscillator (VCO). This

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,

Contextual Info: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband

MRF1535N

Abstract: MRF1535FNT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1535N Rev. 11, 2/2008 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices

PD54003L

Contextual Info: AB-54008L-175 2 stages RF power amp: PD84001-E + PD54008L-E + LPF N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Current < 1.5A ■ Input power < 10dBm

ATC600F241JT250XT

Abstract: GRM31CR61H106KA12L ATC100A220JT150XT ATC600F220JT250XT AFT09MS031NR1 inductor 50 NH GRM31CR61H106KA12
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 1, 8/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of

TRIMMER capacitor

Abstract: MRF1535FT1 "RF power MOSFETs" 3.40 pf capacitor MRF153 A05T A113 AN211A AN215A AN721
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1535T1 Rev. 8, 5/2006 Replaced by MRF1535NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

TRIMMER capacitor

Abstract: MRF1535FNT1 "RF power MOSFETs" FREESCALE PACKING TRIMMER capacitor 160 pF A05T A113 AN211A AN215A AN721
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1535N Rev. 13, 6/2009 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices

capacitor 27pf

Abstract: Capacitor RUBYCON CAPACITOR RUBYCON CAPACITOR 120 GRM188R71H102K capacitor 22 pf GRM188R71H104KA GRM188R71H103KA capacitor 56 pF Coilcraft
Contextual Info: DB-55015-165 BOM Component ID Description B1, B2 Ferrite Bead Value D1 Zener Diode 5.1 V L1 Inductor 35.5 nH L2 Inductor L3 Inductor L4 Case size Manufacturer Part Code PANASONIC EXCELDRC35C SOD110 PHILIPS BZX284C5V1 Mini COILCRAFT B09T 17.5 nH Mini COILCRAFT

NEOHM CRG 0603 thick film resistor

Abstract: Coilcraft NEOHM CRG 0603 capacitor 33nj PD84001 GRM1885C1H270JA01 33 pf capacitor 22 pf capacitor GRM1885C1H3R3CZ01 PD54008L-E
Contextual Info: STEVAL-TDR003V1 Typical performance Part list Designator Manufacturer Size Value Comment Part code C1, C5, C16 Murata 0603 nc Capacitor C6 Murata 0603 1 uF Capacitor C1F Murata 0603 3.3 pF Capacitor GRM1885C1H3R3CZ01 C2, C3, C4, C7, C8, C9, C10 Murata 0603

B10T

Abstract: 1008ls of coilcraft 0603CS 0402CS 80500 1812LS-224
Contextual Info: Document 158-1 Modeling Coilcraft RF Inductors This data allows you to create a model that adequately simulates the behavior of Coilcraft RF inductors from 1 MHz to 1.8 GHz. PSpice Equivalent of Circuit An equivalent PSpice® model of a practical inductor is

NEOHM CRG 0603 thick film resistor

Abstract: PD84001 C2f SOT-89 C5F sot smd c2f AB-54008L-175 GRM1885C1H3R3CZ01 PD54008L-E PD84001-E
Contextual Info: AB-54008L-175 2 stages RF power amp: PD84001-E + PD54008L-E + LPF N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Current < 1.5A ■ Input power < 10dBm

Roederstein eyf

Abstract: EYF roederstein 0/EYF roederstein 20/Roederstein eyf
Contextual Info: 7 6 2 1 b 24 0001205 T 23E D ROEDERSTEIN ELECTRONICS A-05-11-03 Roederstein High-Capacitive Electrolytic Capacitors with Solder Pins, Insulated, Polarized, Etched Electrodes, Pulse-Proof EYF 00 EYF 06 The EYF type belongs to the high-capacitive electrolytic capacitors that are noted for the small design, wide temperature ran­

Wavetek 395

Abstract: MPS901 TOKO CERAMIC FILTER 455 44.545 crystal 455 khz if transformer Wavetek 164 TOKO 7mc8128z carrier detect phase shift J380 150P
Contextual Info: Freescale Semiconductor, Inc.Order this document by MC13156/D MC13156 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 The MC13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. Excellent high frequency performance is achieved at low cost using Motorola’s MOSAIC 1.5 bipolar