MRF153 Search Results

MRF156

Abstract: AN-1041 Granberg AN1041 mrf151g 300 mrf155 AN1041/D MRF153 MRF154 MRF141G
Contextual Info: Order this document by AN1041/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1041 MOUNTING PROCEDURES FOR VERY HIGH POWER RF TRANSISTORS Prepared by: Helge O. Granberg RF Engineering Advanced Products Group RF power semiconductors such as MRF153, MRF154, MRF155, MRF156 and MRF430 are housed in Case 368-01,

MRF1535N

Abstract: MRF1535FNT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1535N Rev. 11, 2/2008 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices

TRIMMER capacitor

Abstract: MRF1535FT1 "RF power MOSFETs" 3.40 pf capacitor MRF153 A05T A113 AN211A AN215A AN721
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1535T1 Rev. 8, 5/2006 Replaced by MRF1535NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

TRIMMER capacitor

Abstract: MRF1535FNT1 "RF power MOSFETs" FREESCALE PACKING TRIMMER capacitor 160 pF A05T A113 AN211A AN215A AN721
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1535N Rev. 13, 6/2009 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices

mrf1535

Abstract: TRIMMER capacitor AN721 MRF1535FNT1 MRF1535N MRF1535NT1 VK200 A05T A113 AN211A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1535N Rev. 10, 9/2006 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices

capacitor 475

Abstract: A05T AN211A AN215A AN721 MRF1535FT1 MRF1535T1 VK200
Contextual Info: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices

MRF1535NT

Abstract: MRF1535N
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1535N Rev. 9, 5/2006 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1535T1 Rev. 8, 5/2006 Replaced by MRF1535NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

MRF1535

Abstract: A05T A113 AN211A MRF1535FNT1 MRF1535FT1 MRF1535NT1 MRF1535T1 VK200 D 92 M - 03 DIODE
Contextual Info: Freescale Semiconductor Technical Data MRF1535T1 Rev. 6, 1/2005 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices

L5N1

Contextual Info: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

Contextual Info: Freescale Semiconductor Technical Data Rev. 6, 1/2005 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices

A05T

Abstract: AN211A AN215A AN721 MRF1535FT1 MRF1535T1 VK200 N23020
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF1535T1 MRF1535FT1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

S2183

Abstract: arco TRIMMER capacitor
Contextual Info: Freescale Semiconductor Technical Data MRF1535T1 Rev. 7, 3/2005 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices

FERROXCUBE VK200

Contextual Info: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband

AN4005

Abstract: A05T AN211A AN215A AN721 MRF1535T1 VK200 capacitor 475
Contextual Info: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

mrf153

Abstract: A744G MC1723 applications
Contextual Info: 12E 0 I MOT OROL A SC Q0Û7437 fl | T - Î M f XSTRS/R F MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA MRF153 The RF T M O S Line P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-Mode T M O S LINEAR RF PO W ER FETs 300 W ATTS 2-100 M H z . designed primarily for linear large-signal output

MHW6181

Abstract: MRF151G MRF9135LS MRF455 APPLICATION NOTES amplifier mrf247 MRF247 MRF171A MRF21180 MRF374A MRF428
Contextual Info: 7 2 , R O T C U D N RF AND IF O C S E H C AR D E IV BY E L A C MI SE E R F WWW.MOTOROLA.COM/SEMICONDUCTORS QUARTER 4, 2001 SPSSG1009/D REV 0 :KDW•V 1HZ Market Part General Purpose RF SiGe:C LNA and Cascode Amplifier MBC13720, MBC13916 Land Mobile Radio MRF1535T1, MRF1550T1

AN721

Abstract: AN211A TRIMMER capacitor A05T A113 AN215A AN3263 MRF1535FNT1 MRF1535N MRF1535NT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1535N Rev. 12, 6/2008 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.