165NH Search Results

ARCO

Abstract: ARF448
Contextual Info: A dvanced P ow er T e c h n o lo g y ^ ARF448A ^ RF POWER MOSFETs N -C H A NN EL ENHANCEMENT MODE 150V 250W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.

ARF448A

Abstract: ARF446 ARF447 ARF448B VK200-4B
Contextual Info: ARF448A ARF448B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.

Contextual Info: 130.38 MHz Filter for CDMA Subscriber Applications Part Number 855326 S-Parameter Data Available Continued on follow ing page T y p ic a l / / / ' y 's P e r f o r m a n c t? \ \ \ ' V/ ’ V ’ V fV V Horizontal: 1 M H z / D iv Vertical: 1 0d B / D iv

ARF448A

Abstract: ARF446 ARF447 ARF448B VK200-4B
Contextual Info: ARF448A ARF448B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 250W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.

Contextual Info: TAI-SAW TECHNOLOGY CO., LTD. No.3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales3@mail.taisaw.com Web: www.taisaw.com IF SAW Filter 71 MHz 0.25MHz BW SMD 13.3 x 6.5 mm MODEL NO.: TB0630A

TB0630A

Contextual Info: TAI-SAW TECHNOLOGY CO., LTD. No.3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales3@mail.taisaw.com Web: www.taisaw.com IF SAW Filter 71 MHz 0.25MHz BW SMD 13.3 x 6.5 mm MODEL NO.: TB0630A

Contextual Info: Preliminary Information Data DIM800XSM45-TS000 Single Switch IGBT Module Replaces DS6089-2 DS6089-3 April 2013 LN30438 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ)

Contextual Info: Preliminary Information Data DIM800XSM45-TS001 Single Switch IGBT Module Replaces DS6090-2 DS6090-3 April 2013 LN30437 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ)

Contextual Info: Preliminary Information Data DIM400XCM45-TS001 IGBT Chopper Module DS6110-1 June 2013 LN30638 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 

Contextual Info: Preliminary Information Data DIM800XSM45-TS001 Single Switch IGBT Module Replaces DS6090-2 DS6090-3 April 2013 LN30437 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ)

ARF448A/B

Contextual Info: ARF448A G ARF448B(G) D G S *G Denotes RoHS Compliant, Pb Free Terminal Finish. TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.

DIM400XCM45-TS001

Contextual Info: Data DIM400XCM45-TS001 IGBT Chopper Module Replaces DS6110-2 DS6110-3 June 2014 LN31689 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT

DIM400XCM45-TS000

Contextual Info: Data DIM400XCM45-TS000 IGBT Chopper Module Replaces DS6111-3 DS6111-4 August 2014 LN31873 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max)

ARF446

Abstract: ARF447 ARF448A ARF448B VK200-4B 250SEC
Contextual Info: ARF448A ARF448B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.

DIM800XSM45-TS001

Contextual Info: Data DIM800XSM45-TS001 Single Switch IGBT Module Replaces DS6090-5 DS6090-6 August 2014 LN31875 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)

Contextual Info: Data DIM1200ASM45-TS000 Single Switch IGBT Module Replaces DS6102-3 DS6102-4 December 2014 LN32160 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ)

arf446

Contextual Info: ARF448A ARF448B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.

Contextual Info: Preliminary Information Data DIM400XCM45-TS000 IGBT Chopper Module DS6111-1 June 2013 LN30639 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC

Contextual Info: Preliminary Information Data DIM800XSM45-TS000 Single Switch IGBT Module Replaces DS6089-2 DS6089-3 April 2013 LN30438 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ)

Contextual Info: Preliminary Information Data DIM1200ASM45-TS000 Single Switch IGBT Module DS6102-1 May 2013 LN30516 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ)

Contextual Info: Preliminary Information Data DIM1200ASM45-TS001 Single Switch IGBT Module DS6107-1 June 2013 LN30635 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK)

Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 71.0MHz Part No: MP01948 Model: TB0630A Rev No: 2 A. MAXIMUM RATING: Electrostatic Sensitive Device 1. Operating temperature range: -40°C to 85°C

Contextual Info: Preliminary Information Data DIM1200ASM45-TS000 Single Switch IGBT Module DS6102-1 May 2013 LN30516 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ)

Contextual Info: Preliminary Information Data DIM400XCM45-TS000 IGBT Chopper Module DS6111-1 June 2013 LN30639 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC