PD55008L Search Results

power 12v

Contextual Info: DB-55008L-960 RF POWER amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 860 - 960MHz ■ Supply voltage: 12 ■ Output power: 7W ■ Efficiency: 46% - 55% ■ Load mismatch: 20:1

Contextual Info: DB-55008L-880 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE

Contextual Info: PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • INTEGRATED ESD PROTECTION

DB-55008L-470

Abstract: PD55008L
Contextual Info: DB-55008L-470 schematic 1+ 2- R2 B2 C3 C4 + B1 MSub FR4 H=60 mil C5 Vcc C1 D1 C2 R1 L1 C12 R3 C9 C10 TL5 C8 RFin TL1 C6 L2 TL2 TL3 TL4 LDMOS PD55008L TL6 C11 L3 C13 C7 RFout

GRM42-6

Abstract: 102J EEVHB1V100P EXCELDRC35C PD55008L-E
Contextual Info: DB-55008L-235 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 215 - 235 MHz ■ Supply voltage: 13.6 V ■ Output power: 12 W ■ Power gain: 15.2 ± 0.8 dB

PowerFLAT

Contextual Info: PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O

1206 package resistor,1k resistor

Abstract: philips smd 1206 resistor
Contextual Info: DB-55008L-175 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 135 - 175 MHz SUPPLY VOLTAGE

GRM42-6X7R103

Abstract: ATC 17 25 ATC 220 capacitor 100b c14 c13 tyco RESISTOR POTENTIOMETER ATC 100A 100JW capacitor 10 pf zener 100B zener 1206 5.1 v
Contextual Info: DB-55008L-450 Component ID B1 B2 C1 C2,C3 C4 C6, C7 C8 C9 C11,C12 C13 C14 C15 C16 C17 L1,L2 L3,L4 L5 R1 R2 R3 R4 D1 TL1 TL2 TL3 TL4 TL5 TL6 PD55008L Board Description Ferrite Bead Ferrite Bead Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor

102J

Abstract: DB-55008L-960 EEVHB1V100P EXCELDRC35C GRM42-6 PD55008L PD55008L-E
Contextual Info: DB-55008L-960 Evaluation board using PD55008L-E for UHF RFID reader Features • Excellent thermal stability ■ Frequency: 860 - 960 MHz ■ Supply voltage: 12 V ■ Output power: 7 W ■ Efficiency: 46 % - 55 % ■ Load mismatch: 20:1 ■ Beo free amplifier

grm42-6 cog 101

Abstract: GRM42-6 102J EEVHB1V100P EXCELDRC35C PD55008L-E Diode smd L67 J747 J7-47 Philips BZX284C5V1
Contextual Info: DB-55008L-318 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 225 - 318 MHz ■ Supply voltage: 13.6 V ■ Output power: 8 W ■ Power gain: 13.5 ± 0.7 dB

3012S

Abstract: J-STD-020B PD55008L 0949
Contextual Info: PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • INTEGRATED ESD PROTECTION

J-STD-020B

Abstract: PD55008L 0951
Contextual Info: PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • INTEGRATED ESD PROTECTION

rf power amplifier circuit by 400-470mhz

Abstract: DB-55008L-470 JESD97 PD55008L
Contextual Info: DB-55008L-470 RF POWER amplifier using 1 x PD55008L N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 12.5V ■ Output power: 8W ■ Power gain: 16.7 ± 2.0dB ■ Efficiency: 49% - 61%

104k x7r 50

Abstract: murata COG capacitor 104K capacitor GRM42-6 COG cog 100 potentiometer resistor 102J GRM42-6 B2 Zener capacitor 104k x7r 50
Contextual Info: DB-55008L-235 BOM Component ID B1 B2 C1, C2 C3 C4 C5 C6, C12 C7 C8 C9, C10 C11 D1 L1 L2 L3 R1 R2 R3 R4 TL1 TL2 TL3 TL4 TL5 TL6 TL7 PD55008L-E Description Ferrite Bead Ferrite Bead Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor

Contextual Info: PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • INTEGRATED ESD PROTECTION

JESD97

Abstract: J-STD-020B PD55008L PD55008L-E
Contextual Info: PD55008L-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 8W with 17dB gain @ 500MHz / 12.5V ■ Integrated ESD protection ■

gp 429 pin smd diode

Abstract: j353 j652 EXCELDRC35C PD55008L PD55008L-E J339 DB-55008L-450 MM1014
Contextual Info: DB-55008L-450 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 318 - 450 MHz ■ Supply voltage: 13.6 V ■ Output power: 8 W ■ Power gain: 14.6 ± 0.6 dB

820 pf ct Capacitor

Abstract: zener diode 5.1 v 3214W-1-103E DB-55008L-880 EEVHB1V100P EXCELDRC35C GRM426C0G102J50 GRM426C0G121J50 GRM426X7R104K50 PD55008L
Contextual Info: DB-55008L-880 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE 12.5 V OUTPUT POWER 7W POWER GAIN

C17AH

Abstract: GRM42-6C0G102J50 DB-55008L-175 EEVHB1V100P EXCELDRC35C PD55008L 1206 package resistor,1k resistor
Contextual Info: DB-55008L-175 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 135 - 175 MHz SUPPLY VOLTAGE

DB-55008L-960

Abstract: JESD97 PD55008L-E
Contextual Info: DB-55008L-960 RF POWER amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 860 - 960MHz ■ Supply voltage: 12 ■ Output power: 7W ■ Efficiency: 46% - 55% ■ Load mismatch: 20:1

Contextual Info: PD55008L-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 8W with 17dB gain @ 500MHz / 12.5V ■ Integrated ESD protection ■

DB-55008L-470

Abstract: EXCELDRC35C GRM42-6C0G102J50 PD55008L PD55008L-E
Contextual Info: DB-55008L-470 Evaluation board using PD55008L-E for UHF mobile radio Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 12.5 V ■ Output power: 8 W ■ Power gain: 16.7 ± 2.0 dB ■ Efficiency: 49 % - 61 % ■ Load mismatch: 20:1

PD550

Abstract: DB-55008L-960 PD55008L
Contextual Info: DB-55008L-960 schematic 1+ MSub D1 FR4 H=60 mil B2 R1 C4 + C3 2- C5 B1 Vcc R2 C2 C1 L1 R3 TL4 LDMOS PD55008L RFin TL1 C6 TL2 C7 TL3 C8 TL5 C9 TL6 C11 C10 TL7 RFout

DB-55008L-175

Abstract: PD55008L
Contextual Info: DB-55008L-175 schematic 1+ 2- B2 R3 D1 C3 C4 + B1 R2 C5 Vcc MSub C1 FR4 H=60 mil C2 L1 C10 R1 C9 TL4 C8 RFin TL1 C6 TL2 L2 TL3 LDMOS PD55008L L3 C11 TL5 C7 TL6 RFout