PD550 Search Results

AN1294

Abstract: PD55008 PD55008S 11 0741
Contextual Info: PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE DESCRIPTION

PD55003

Abstract: PD55003S
Contextual Info: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE

J-STD-020B

Abstract: PD55003L
Contextual Info: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION

AT27273

Abstract: DSA00344764 k3224 1206 cms diode cms capacitor gsm Booster 22 pf TEKELEC TEKELEC tekelec 630 VJ1206Y104KXAT
Contextual Info: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 12 W min. with 12 dB gain over 875 - 915 MHz • 10:1 LOAD VSWR CAPABILITY

transistor smd po3

Abstract: PD55003 AN1294 PD55003S
Contextual Info: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

Contextual Info: PD550 Linear ICs dc-to-dc/Charge Pump Voltage Converter status Military/High-RelN Output Voltage Nominal V 50ñ Load Current Max. (A)10m Drop-Out Volt Max. P(D) Max. (W)1.0 Nom. Supp (V)5 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)100 Package StyleModule

PD55003TR

Abstract: transistor smd po3 901 704 16 08 55 AN1294 PD55003 PD55003-E PD55003S Z1033
Contextual Info: PD55003-E PD55003S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3W with 17dB gain @ 500MHz / 12.5 ■ New RF plastic package PowerSO-10RF

SMD resistor 565

Abstract: smd z5 transistor transistor smd z9 AN1294 PD55015 PD55015S
Contextual Info: PD55015 PD55015S RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 14 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE PowerSO-10RF

power 12v

Contextual Info: DB-55008L-960 RF POWER amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 860 - 960MHz ■ Supply voltage: 12 ■ Output power: 7W ■ Efficiency: 46% - 55% ■ Load mismatch: 20:1

PD55015

Contextual Info: DB-55015-165 RF POWER amplifier using 1 x PD55015 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 155 - 165 MHz ■ Supply voltage: 20V ■ Output power: 30W ■ Power gain: 14.7 ± 0.3 dB ■ Efficiency: 60% - 72%

Contextual Info: DB-55008L-880 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE

smd code ND e3

Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

Contextual Info: PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • INTEGRATED ESD PROTECTION

PD55035S

Contextual Info: DB-55035S-930 RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 890 - 930 MHz ■ Supply voltage: 13.6V ■ Output power: 30W ■ Efficiency: 47% - 56% ■ Load mismatch: 10:1

DB-55008L-470

Abstract: PD55008L
Contextual Info: DB-55008L-470 schematic 1+ 2- R2 B2 C3 C4 + B1 MSub FR4 H=60 mil C5 Vcc C1 D1 C2 R1 L1 C12 R3 C9 C10 TL5 C8 RFin TL1 C6 L2 TL2 TL3 TL4 LDMOS PD55008L TL6 C11 L3 C13 C7 RFout

Contextual Info: STEVAL-TDR016V1 RF power amplifier using 1 x PD55015E N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 155 - 165 MHz ■ Supply voltage: 20 V ■ Output power: 30 W ■ Power gain: 14.7 ± 0.3 dB ■ Efficiency: 60% - 72%

GRM42-6

Abstract: 102J EEVHB1V100P EXCELDRC35C PD55008L-E
Contextual Info: DB-55008L-235 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 215 - 235 MHz ■ Supply voltage: 13.6 V ■ Output power: 12 W ■ Power gain: 15.2 ± 0.8 dB

VJ1206Y104KXAT

Abstract: 501-CHB-100-JVLE 501 CHB SPECIFICATIONS 3224W103 3224W-103 501-CHB CMS TANTALE 501chb100jvle 501 CHB AT27273
Contextual Info: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER

PD55003

Abstract: PD55003S
Contextual Info: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

transistor smd 6z

Abstract: smd transistor 6Z SMD Transistor 9z transistor smd 4z SMD Transistor 7z smd 93 3Z 901 704 16 08 55 PD55003TR AN1294 PD55003
Contextual Info: PD55003-E PD55003S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 3W with 17dB gain @ 500MHz / 12.5 ■ New RF plastic package

SO42

Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Contextual Info: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002

capacitor 330pF ATC

Abstract: 8W 0.01% resistor NV SMD TRANSISTOR SMD 1206 RESISTOR 100 OHMS 3214W-1-103E A03TJ B09TJ BZX284C5V1 DB-55008-500 EXCELDRC35C
Contextual Info: DB-55008-500 RF POWER amplifier using 1 x PD55008 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 500MHz ■ Supply voltage: 12.5V ■ Output power: 8W ■ Efficiency: 48% - 54% ■ Load mismatch: 20:1

PowerFLAT

Contextual Info: PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O

SMD package mark code C9

Abstract: PD55025 smd z5 transistor AN1294 PD55015STR-E PD55015TR-E PD55025-E PD55025S PD55025S-E
Contextual Info: PD55025-E PD55025S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 25W with 14.5dB gain @ 500MHz / 12.5V ■ New RF plastic package