TRANSISTORS D 669 Search Results

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

BD 669

Contextual Info: BDV66A; B BDV66C; D DARLINGTON POWER TRANSISTORS P-N-P epitaxial base Darlington transistors for audio output stages and general am plifier and switching applications. N-P-N complements are B D V 6 7 A ; B; C and D. Matched complementary pairs can be supplied.

h 669A

Abstract: 669A 649a C649A h 649A
Contextual Info: CSB649, CSB649A CSD669, CSD669A CSB649, 649A CSD669, 669A PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A B 7 .4 7.8 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E

669a

Contextual Info: CSB649, CSB649A CSD669, CSD669A 1 CSB649, 649A CSD669, 669A PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A e 7.4 7.8 10.5 10.8 c 2.4 2.7 D 0.7 0.9

darlington complementary power amplifier

Contextual Info: BDV66A; B BDV66C;D PHILIPS INTERNATIONAL SbE D • 711002b DDM337Ô 5 m ■ PHIN T - 3 3 - 3 ’ / DARLINGTON POWER TRANSISTORS P-N-P epitaxial base Darlington transistors fo r audio output stages and general amplifier and switching applications. N-P-N complements are BDV67A; B; C and D. Matched complementary pairs can be

NTE2548

Abstract: NTE2547
Contextual Info: NTE2547 NPN & NTE2548 (PNP) Silicon Complementary Transistors Darlington Driver Features: D High DC Current Gain D High Current Capacity and Wide ASO D Low Saturation Voltage Applications: D Motor Drivers D Printer Hammer Drivers D Relay Drivers D Voltage Regulator Control

NTE2551

Abstract: NTE2552
Contextual Info: NTE2551 NPN & NTE2552 (PNP) Silicon Complementary Transistors Darlington Driver, Switch Features: D High DC Current Gain D Low Saturation Voltage D High Current Capacity and Wide ASO D Isolated TO220 Type Package Applications: D Motor Drivers D Printer Hammer Drivers

Contextual Info: NTE2547 NPN & NTE2548 (PNP) Silicon Complementary Transistors Darlington Driver TO220 Full Pack Features: D High DC Current Gain D High Current Capacity and Wide ASO D Low Saturation Voltage Applications: D Motor Drivers D Printer Hammer Drivers D Relay Drivers

NTE2569

Abstract: NTE2568
Contextual Info: NTE2568 NPN & NTE2569 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Saturation Voltage D Fast Switching Speed D Isolated TO220 Type Package Applications: D Car–Use Inductance Drivers, Lamp Drivers D Inverter Drivers, Converters (Strobes, Flashes, FLT Lighting Circuits)

Contextual Info: i i N AMER PHILIPS/DISCRETE b'lE D 002flQMb EMM • APX PN2222 PN2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 envelope primarily intended for linear and switching applications. P-N-P complement is PN2907/2907A.

NTE2574

Abstract: NTE2575
Contextual Info: NTE2574 NPN & NTE2575 (PNP) Silicon Complementary Transistors Video Output for HDTV Features: D High Collector Emitter Breakdown Voltage: VCEO = 120V Min D High Gain Bandwidth Product: fT = 400MHz Typ D Low Reverse Transfer Capacitance and Excellent High Frequency Characteristics:

NTE2574

Abstract: NTE2575
Contextual Info: NTE2574 NPN & NTE2575 (PNP) Silicon Complementary Transistors Video Output for HDTV Features: D High Collector Emitter Breakdown Voltage: VCEO = 120V Min D High Gain Bandwidth Product: fT = 400MHz Typ D Low Reverse Transfer Capacitance and Excellent High Frequency Characteristics:

BDV64

Abstract: BDV65 BDV65B 1000 w audio amplifier diagram
Contextual Info: BDV65; 65A BDV65B; 65C SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in m onolithic Darlington circu it fo r audio o utput stages and general am plifier and switching applications. P-N-P complements are BDV64, 64B and 64C. QUICK REFERENCE D A T A

pn2222a

Abstract: PN2222 pnp PN2222A le PN2222
Contextual Info: II N AMER PHILIPS/DISCRETE bTE D • bbSB'm DDSflOMb 244 ■ APX PN2222 PN2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 envelope prim arily intended fo r linear and switching applications. P-N-P complement is PN2907/2907A.

d 417 transistor

Abstract: 417 TRANSISTOR 8D239 80239 80239c 80240 BD239 BD239A BD239B BD240
Contextual Info: 01 3875081 G E SOLID STATE Pro Electron Pow er Transistors D E • 3 fl"? S D fl i 01E 17527 D 0 LI ji 7 5 dï 7- / BD240, BD240A, BD240B, BD240C File Number 670 Epitaxial-Base Silicon P-N-P

NTE2566

Abstract: NTE2567 hFE is transistor to220
Contextual Info: NTE2566 NPN & NTE2567 (PNP) Silicon Complementary Transistors High Current, High Speed Switch Features: D Low Saturation Voltage D Fast Switching Speed D Isolated TO220 Type Package Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

NTE2571

Abstract: NTE2570
Contextual Info: NTE2570 NPN & NTE2571 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector–Emitter Saturation Voltage D High Current Capacity Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V

Contextual Info: DTC124TE/DTC124TU A/DTC124TKA h ~p > v X £ /Transistors DTC124TE/DTC124TUA/DTC124TKA Digital Transistors Includes Resistors ^/Transistor Switch • • W g x fa ig l/D im e n s io n s (Unit : mm) », a t i m <d î ' H î i t \ m 4- u T - < > A — 2 ! § t f 't g j & T £ 5 ( ^ « a ï g E l

philco transistors

Abstract: DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES
Contextual Info: SEMICONDUCTOR COMPLEMENT MANUAL TABLE OF CONTENTS Transistors — Home Equipment Page S Transistors — Auto Radios Page 28 Semiconductor Diodes — Home Equipment Page 25 Silicon Rectifiers Page 60 Mechanical Specifications and Connections Page 62 S Y L V A N IA ELEC TR IC P R O D U C T S INC.

BDV66D

Abstract: BDV68 BDV68C BDV66C A11T darlington pair transistor BDV66A BDV67A M0433
Contextual Info: BDV66A; B _ JI BDV66C; D PHILIPS INTERNATIONAL SbE D • 711002b 0043370 S41 * P H I N ~ r -3 3 -y i DARLINGTON PO W ER TRANSISTO RS P-N-P epitaxial base Darlington transistors for audio output stages and general amplifier and switching

NS 8002 1151

Abstract: MQ3251A
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • L,3b7254 00=12431 T ■ M O TbTH VZS MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1 DM0 Discrete M ilitary Products PIMP Silicon Dual Quad Sm all-Signal Transistors M D 3251A M D 3251A F (Duals) M H Q 3251A M Q 3251A m in t (Quads)

NS 8002 1151

Abstract: SM 8002 MD4261 case 60-01 8002 1028 MHQ4261
Contextual Info: m > E MOTOROLA D SEMICONDUCTOR b3b7254 00^2441 2 • H 0 T b 'F -*4 V 2 .$ MOTOROLA SC XST RS/R F TECHNICAL DATA Discrete M ilitary Products PIMP S ilicon Dual/Q uad Sm all-Signal Transistors DM0 M D4261 M D 4261F (Duals) MHQ4261 MQ4261 //I# /// (Quad)

NTE2673

Abstract: TO220FP
Contextual Info: NTE2673 NPN & NTE2674 (PNP) Silicon Complementary Transistors General Purpose Power TO220FP Type Package Features: D Low Collector−Emitter Saturation Voltage: VCD(sat) = 0.5V Typ (IC/IB = 2A/0.2A) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK