TRANSISTOR Y 9F Search Results

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1967 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1967 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on U H F band mobile radio applications. 4 0±0 5 H

k6z transistor

Abstract: MMBF170 iGSS 100nA Vgs 0v
Contextual Info: MMBF170 v isH A Y N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance Low Threshold Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 Min Max -H :h“ A A 0.37 0.51 B 1.19 1.40

2SA490

Abstract: TRANSISTOR 3hm 2SC790 AC75
Contextual Info: 490 2SA o ^ U 3 y p N P x ^ 5> ^ j> ì\ y ^ m ^ _ SILICON PNP EPITAXIAL MESA 03.6±g2 Power Amplifier Applications 2 S C 7 9 0 <D 3 > h ì - fì TRANSISTOR Unit in mm ntitiàmm o h ^ y ^ x 5> o n 7 9 / y * 'J T I ti J ] 1 0 W ? 7 x . ry/tcsatto Complementary to 2 S C 7 9 0

KYS 30 40 diode

Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Contextual Info: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching

1mbh

Abstract: YR39 D2050
Contextual Info: 1MBH70D-090A IGBT : Outline Drawings INSULATED GATE BIPOLAR TRANSISTOR SiQ3 : Features • ¡S B U M V y-i''?' • High Speed Sw itching Low Saturation Voltage • A X'h'f— hS i/t M O S -y—MHia #/jv§)y'C.y^— Small Package High Impedance Gate Gate

FZ 300 R 06 KL

Abstract: PA1603 Transistor NP 3773 TRANSISTOR PHL 641 PA1603CX uPA1603 L0734 IS352 l 0734
Contextual Info: ^ • J Ê S Ù * ^ 0 ,7 - Com pound Field Effect P o w e r Transistor " ^ y /¿PA1603 à, i y A 1 6 3 \ or7“ - MO S F E T 'Z U H ' MOS F E T h m iÜ M tfifr & & Ô 4 / g -> -y ? '*7 - MOS F E T 7 W T - , ïü f f ln i^ .y ÿ W f f l ; ÿ > 7 ° 9° O

2SC2958

Abstract: transistor AE 2SC2959 2SA1221 F0246
Contextual Info: NEC Aj m^Tjvrx '> i; =3 > h = 7 > i> 7 .9 Silicon T ra n sisto rs 2 S C 2 9 5 8 ,2959 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier ^•JgH/PACKAGE DIMENSIONS # g/FEA TU RES oTViDSïtfilèK K7 -Í 7", ¡ti* , MIE, is Ja I S t i . \f y 9 "j :y 3 >

2SB810

Abstract: JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST
Contextual Info: V y □ > h 7 > y X ^ Silicon Transistor 2SB810 P N P x \£ 2 * 4$ V y ' j a > h 7 > v X 5 f *M $ B I « # t : mm * - b v h x H ï îfiO i£ J B  lÜ * f fl,  * Œ * * 3 t Sg » 0> * - * K 7 -T 7 , * <& {*#» K 5 < O ig h F E T 4 .0 ± 0 .2 U T ftiS T T o

AF02

Abstract: 2SJ198 2SK1484 K0852
Contextual Info: -y 5 7 • h ~ mos M O S Field Effect Transistor 2 P x 4 J 1 9 8 MOS F E T 2SJ198 a P f- ^ * M m MOS F E T T, 5 V iz j: § S IC mm -y f- > r m ^ - v t o *M O S FET l i t 5.2 MAX. <, X >f y f- > 7 ? f- ^ - ? ^ i K > D C - D C X ' f «y f - i - ^ i S T " i “ o

marking M63

Abstract: marking K50 transistor
Contextual Info: T I • I SI NEC Ar 7 lÏ T A \ f Compound Transistor A GN1L4Z M pnp ^ 4# j u M '> y =i > » o/<>f r x i Ê S t è Ri = 4 7 kû (Ta -2 5 nn *Ê *fft*5 È :fê 9 9 i = ^ u 9 9 ? v 9 9 B& V -y ÿ f S i W ± V CEO - 5 0 V V ebo - V :< H ) ili \ 9 {£ ~y 3c

transistor sb 772

Abstract: TRANSISTOR D 1853 ACS 086 SK FN 521 512 CJ3 2SK1853 pj 0266 SB 772 KSB 772 SF94
Contextual Info: s— S 5 • S ''— NEC h* MOS MOS F E T M O S Field Effect Power Transistor 2SK1853 N + s< n— X >T M O S F E T y ^ I t i 2 S K 1853 ¿ ,N > 5v F E T T", h 0 ^ °7 - £ W H ] M O S (^ - fi i mm i c co a 1.* (3 j: ^ y" r " ' <A X T'-to ix ^ y f > i i :* > m % T",

transistor marking s72

Abstract: transistor s72 k72 transistor 702 TRANSISTOR sot-23 s72 sot 23 k72 transistor sot 23 S72 2n7002 S72 transistor marking 702 2n7002 702
Contextual Info: 2N7002 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~*\ : h - A TOP VIEW

S229

Abstract: MMBF5484LT1 S129 S219 jfet transistor s129 equivalent tf5r
Contextual Info: MOTOROU SEMICONDUCTOR TECHNICAL Order this documsnt by MMBF5484LT11D DATA JFET Transistor — N-Channel MMBF5484LTI 2 SOURCE I 3 GATE a Tc = 25°C Linear Derating Factor Storage Channel Temperature THERMAL Range .$T2:%:Q$ .,\:.\ ‘:Y?< , ,>< ., Tstg -65 to +150

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbSS^Sl QQ 3 Q 337 b54 « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overioa<y>rotected logic level power

2SB1318

Abstract: BH rn transistor 3Fp transistor
Contextual Info: zr— S • — K NEC ^ Silicon P o w e r Transistor 2SB1318 PNPI ’J=l> m « W t : mm 7.0 MAX. 1-2 o y — *J > h y ^ f â iC O t z & y , o S i t § Ë Â S^C I , (T a L Ä * M S V c E (s a t ) ~ c ~ t o = 25 °C ) B& g -§§- ¥ /E fï a V 9 9 • '•'i — X fai 16 Eh

NDS9942

Abstract: p channel mosfet
Contextual Info: National e * M a y 19 96 Semiconductor" NDS9942 Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

sf 128 transistor

Abstract: 2SK2159 TRANSISTOR SF 128 6GDG TC-7989A
Contextual Info: h ^ > v x & MOS Field Effect Transistor 2SK2159 N MOS FET m 2SK215 9 it 1.5 V i l Ü £ < y<DN3- -V % U , f£ Œ T i ® -? è , m x 'f y i - > 7 m MOS FETT' & w t f o K t-T t '/ c ® , IM & : m m m 4.5 ±0.1 < £ !> '(£ - r i * * 7 ÎC i f W f ê Œ ®

2SK150

Abstract: 2SK12 2SK15 transistor 2sk 2SK120 2SK11 2SK12-Y 2SK150 A 2SK110 SK 10 BAT 065
Contextual Info: 2 5 ,1 1 5 ' tJ n y n * v % i \ > m 8 i e w i m m ^ y v z & SILICON N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR 2 5 ,1 2 - i 2 S K 15 ii it x o is « « « « * o 1 O D C , A C S S A * S !ttlE l« iffl O O ^ O X -1 7 f- •/

2SD103

Abstract: transistor mp IC marking jw
Contextual Info: SILICON TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR MP-3 D E S C R IP T IO N 2S D 103 3 is designed fo r C olor T V Vertical D eflection O utput, P A C K A G E D IM E N S IO N S in m illim eters esp ecially in H y b rid In te g rate d Circuits. FEATURES

Contextual Info: TRANSISTOR ARRAY <1 Q 2 TRIPLE NPN T K series DARLINGTON T R A N S IS T O R A R R A Y 4* F e a tu re s Ä • NPN 3 E S # « J£ • 8 > iOu -i > 7 ' \ > ,-z.y • * - K A' , Vz = 60±l0V • h P t = 2.5W • ¡S& jfcitlipp, min.1500 • Triple NPN darlington transistor array

Contextual Info: P D - 9. 1597 International IOR Rectifier IRG4BC20S P R E L IM IN A R Y Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

Contextual Info: SA N Y O SEMICONDUCTOR lEE D " j 7 n 7 D 7 b CORP □□□5133 2SD1650 NPN Triple Diffused Planar Silicon Transistor 2039 Color TV Horizontal Deflection Output AppIications with Damper Diode 1748B Applications . High-voltage, power switching Features . Fast speed (tfmaxsO.ilus).

b527

Abstract: tic 263a NDP506A
Contextual Info: National Semiconductor” M a y 19 95 NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field • 26 and 24A, 60V. RDS 0N| = 0.05 and 0.06J2. effect transistors are produced using National's

2SK992

Abstract: U71E 720-ES RXSU 4 T108 T460 332h tt 22
Contextual Info: MOS Field Effect Pow er Transistor 2SK992 MOS F E T j i m 2SK992 Ü , m FET f , 5 V ifiJ^ IC iotbi i i z i è H fë m ib W fiè & îïïim z a -y - f> < , * y v / ' f K, 7 X A "/ f - > r w t t t f ililT ft» x t- t. & £ £ > , t - IM S : mm 10.5 MAX.