TRANSISTOR XN Search Results

Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor)

UN212X

Abstract: UN2223 UNR212X UNR2223 XN04390
Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor)

D8050

Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor)

UN1122

Abstract: UN1222 UNR1122 UNR1222 XN04322 XN4322
Contextual Info: Composite Transistors XN04322 XN4322 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)

UN111L

Abstract: UN121L UNR111L UNR121L XN0431L XN431L
Contextual Info: Composite Transistors XN0431L XN431L Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Unit 50 V Collector to emitter voltage VCEO

2SB970

Abstract: 2SD601A XN4608
Contextual Info: Composite Transistors XN4608 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification (Tr1) For amplification of low frequency output (Tr2) +0.2 2.8 –0.3 +0.25 Unit Collector to base voltage

UN1112

Abstract: UN1212 UNR1112 UNR1212 XN04312 XN4312
Contextual Info: Composite Transistors XN04312 XN4312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 3 Parameter 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)

2SB0709A

Abstract: 2SB709A 2SD1328 XN04609 XN4609
Contextual Info: Composite Transistors XN04609 XN4609 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For amplification of low frequency output (Tr1) For general amplification (Tr2) +0.2 2.8 –0.3 +0.25 • Tr1 0.95 +0.1

TRANSISTOR C 460

Abstract: 2SB709A 2SC2404 XN4683
Contextual Info: Composite Transistors XN4683 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For high-frequency amplification/For general amplification 2.8 –0.3 +0.25 1.5 –0.05 3 0.4±0.2 Parameter (Ta=25˚C) Symbol

UN1115

Abstract: UN1215 UNR1115 UNR1215 XN04315 XN4315
Contextual Info: Composite Transistors XN04315 XN4315 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 3 Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage

UN1121

Abstract: UN1213 UNR1121 UNR1213 XN04382
Contextual Info: Composite Transistors XN04382 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Unit 50 V Collector to emitter voltage VCEO 50 V Collector current

UN1116

Abstract: UN1216 XN4316
Contextual Info: Composite Transistors XN4316 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO

2SB709A

Abstract: 2SD1328 XN4609
Contextual Info: Composite Transistors XN4609 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For amplification of low frequency output (Tr1) For general amplification (Tr2) +0.2 2.8 –0.3 +0.25 • Tr1 0.95 0.95 3 +0.1

UN1112

Abstract: UN1212 XN1A312
Contextual Info: Composite Transistors XN1A312 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 ● Parameter (Ta=25˚C) Ratings Unit Collector to base voltage

UN1122

Abstract: UN1213 UNR1122 UNR1213 XN04381 XN4381
Contextual Info: Composite Transistors XN04381 XN4381 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Unit 50 V Collector to emitter voltage VCEO

2SB0970

Abstract: 2SB970 2SD0601A 2SD601A XN04608 XN4608
Contextual Info: Composite Transistors XN04608 XN4608 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification (Tr1) For amplification of low frequency output (Tr2) +0.2 2.8 –0.3 +0.25 Unit Collector to base voltage

UN1114

Abstract: UN1214 XN4314
Contextual Info: Composite Transistors XN4314 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage

2SB0709A

Abstract: 2SB709A 2SC2404 XN04683 XN4683
Contextual Info: Composite Transistors XN04683 XN4683 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For high-frequency amplification/For general amplification 2.8 –0.3 +0.25 1.5 –0.05 3 0.4±0.2 Parameter (Ta=25˚C)

2SB0970

Abstract: 2SB970 2SD1328 XN04604 XN4604
Contextual Info: Composite Transistors XN04604 XN4604 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For amplification of low frequency output +0.2 2.8 –0.3 +0.25 3 0.4±0.2 Parameter (Ta=25˚C) 1 : Collector (Tr1)

UN1211

Abstract: UN1111 XN4311
Contextual Info: Composite Transistors XN4311 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage

UN1114

Abstract: UN1214 UNR1114 UNR1214 XN04314 XN4314
Contextual Info: Composite Transistors XN04314 XN4314 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Collector to base voltage VCBO 50 V Collector to emitter voltage

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN04601 XN4601
Contextual Info: Composite Transistors XN04601 XN4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter 1.1+0.2 –0.1 2SD0601A(2SD601A) + 2SB0709A(2SB709A)

UN111L

Abstract: UN121L XN431L
Contextual Info: Composite Transistors XN431L Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Ratings Unit VCBO 50 V Collector to emitter voltage VCEO 50 V

UN1116

Abstract: UN1216 UNR1116 UNR1216 XN04316 XN4316
Contextual Info: Composite Transistors XN04316 XN4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter 3 0.4±0.2 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)